Patents by Inventor Yoko Mashige

Yoko Mashige has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitride semiconductor crystal and its production method
    Patent number: 8545626
    Abstract: A method for efficiently producing a plate-like nitride semiconductor crystal having the desired principal plane in a simple method is provided. A raw material gas is fed to a seed crystal in which a ratio (L/W) of length L in a longitudinal direction and maximum width W, of a plane of projection obtained by projecting a crystal growth face on the seed crystal in a growth direction is from 2 to 400, and the maximum width W is 5 mm or less, thereby growing a plate-like semiconductor crystal on the seed crystal.
    Type: Grant
    Filed: March 2, 2009
    Date of Patent: October 1, 2013
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Kenji Fujito, Shuichi Kubo, Yoko Mashige
  • NITRIDE SEMICONDUCTOR CRYSTAL AND ITS PRODUCTION METHOD
    Publication number: 20110129669
    Abstract: A method for efficiently producing a plate-like nitride semiconductor crystal having the desired principal plane in a simple method is provided. A raw material gas is fed to a seed crystal in which a ratio (L/W) of length L in a longitudinal direction and maximum width W, of a plane of projection obtained by projecting a crystal growth face on the seed crystal in a growth direction is from 2 to 400, and the maximum width W is 5 mm or less, thereby growing a plate-like semiconductor crystal on the seed crystal.
    Type: Application
    Filed: March 2, 2009
    Publication date: June 2, 2011
    Applicant: Mitsubishi Chemical Corporation
    Inventors: Kenji Fujito, Shuichi Kubo, Yoko Mashige