Abstract: A vapor chamber having an enclosure which a working fluid is sealed in, the enclosure including: a first flow path; and a fluid flow path part that is adjacent to the first flow path.

Abstract: A semiconductor device including: an insulating circuit substrate including a principal surface and a back surface; semiconductor chips each including an electrode on a principal surface and having a back surface on an opposite side to the principal surface, the back surface being fixed to the principal surface of the insulating circuit substrate; a wiring substrate facing the principal surface side of the insulating circuit substrate, separated from the semiconductor chip; a conductive post fixed to the electrode of the semiconductor chips and the wiring substrate; and a resin sealing body sealing the insulating circuit substrate, the semiconductor chips, the wiring substrate, and the conductive posts in such a manner as to expose the back surface of the insulating circuit substrate, wherein the semiconductor chips are respectively arranged on sides on which two short sides are located, and the conductive post has a recessed portion on its peripheral surface.

Abstract: Provide an electrode catalyst with excellent catalytic activity that can contribute to cost reduction of PEFC. The electrode catalyst includes a hollow carbon carrier with mesopores with a pore size of 2 to 50 nm and a catalyst particle supported on the carrier. The catalyst particle is supported on both inside and outside the mesopores of the carrier, and have a core portion formed on the carrier and a shell portion covering at least a part of the surface of the core portion. Pd is included in the core portion, and Pt is included in the shell portion, and when the analysis of the particle size distribution of the catalyst particles using the three dimensional reconstructed image obtained by electron beam tomography (electron tomography) measurement using an STEM is performed, the ratio of the catalyst particles supported inside the mesopore is 50% or more.

Abstract: A manufacturing method for an electronic device includes a preparation step of preparing a layered body including a substrate, two or more first electrodes, and organic layers, the substrate having a first surface and a second surface that is positioned opposite to the first surface, the two or more first electrodes positioned above the first surface of the substrate, the organic layers positioned above the first electrodes; a second electrode formation step of forming a second electrode above the organic layers so that the second electrode overlaps the two or more first electrodes when viewed in a normal direction to the first surface of the substrate; and a removal step of partly removing regions of the second electrode that is positioned between the first electrodes in plan view.

Abstract: Provide an electrode catalyst with excellent catalytic activity that can contribute to cost reduction of PEFC. The electrode catalyst includes a hollow carbon carrier with mesopores with a pore size of 2 to 50 nm and a catalyst particle supported on the carrier. The catalyst particle is supported on both inside and outside the mesopores of the carrier, and have a core portion formed on the carrier and a shell portion covering at least a part of the surface of the core portion. Pd is included in the core portion, and Pt is included in the shell portion, and when the analysis of the particle size distribution of the catalyst particles using the three dimensional reconstructed image obtained by electron beam tomography (electron tomography) measurement using an STEM is performed, the ratio of the catalyst particles supported inside the mesopore is 50% or more.

Abstract: A vapor chamber in which an enclosed space is formed, and a working fluid is sealed in this space, the enclosed space including: a plurality of condensate flow paths through which a fluid that is the working fluid in a condensing state flows; and vapor flow paths through which a vapor that is the working fluid in a vaporizing state flows, wherein each of projecting parts with which each of the vapor flow paths is provided has a projecting amount varying in an extending direction of the vapor flow paths; a pitch for opening parts that allow the vapor flow paths and the condensate flow paths to communicate varies in the extending direction of the vapor flow paths; or wall parts that separate the flow paths each have a given relationship with a transverse cross section of a given flow path.

Abstract: A semiconductor apparatus 1 includes a circuit substrate 3 having a circuit pattern layer 3c on an upper principal surface, semiconductor elements 4a and 4b mounted on the circuit pattern layer 3c of the circuit substrate 3, a printed substrate 6 arranged apart from the circuit substrate 3 on the upper principal surface side of the circuit substrate 3, a housing 2 mold-sealing the upper principal surface side of the circuit substrate 3, and a block 10 provided sandwiching at least part of the housing 2 and being opposite to the circuit substrate 3, the block having a linear expansion coefficient smaller than that of the housing 2.

Abstract: A semiconductor device including: an insulating circuit substrate including a principal surface and a back surface; semiconductor chips each including an electrode on a principal surface and having a back surface on an opposite side to the principal surface, the back surface being fixed to the principal surface of the insulating circuit substrate; a wiring substrate facing the principal surface side of the insulating circuit substrate, separated from the semiconductor chip; a conductive post fixed to the electrode of the semiconductor chips and the wiring substrate; and a resin sealing body sealing the insulating circuit substrate, the semiconductor chips, the wiring substrate, and the conductive posts in such a manner as to expose the back surface of the insulating circuit substrate, wherein the semiconductor chips are respectively arranged on sides on which two short sides are located, and the conductive post has a recessed portion on its peripheral surface.

Abstract: A liquid flow path portion of a vapor chamber according to the present invention includes a plurality of main flow grooves which each extend in the first direction and through which working fluid in liquid form passes. A convex array which includes a plurality of liquid flow path convex portions arranged in the first direction via a communicating groove, is provided between a pair of the main flow grooves adjacent to each other. Each of the communicating grooves allows communication between the corresponding pair of the main flow grooves. The width of the communicating groove is larger than the width of the main flow groove.

Abstract: Object: To provide a polishing sheet capable of efficiently polishing a hard material such as a metal product so as to form a smooth surface with minimal unevenness. Solution: A polishing sheet (10) including: a substrate (11); a plurality of three-dimensional elements (12) containing abrasive grains and a binding material; and an intermediate layer (13) provided between the three-dimensional elements (12) and the substrate (11) so as to join the substrate (11) and the three-dimensional elements (12), wherein a Youngs modulus of the substrate (11) at 25° C. is not less than 3.0×109Pa; and a Youngs modulus of the intermediate layer (13) at 25° C. is not less than 1.0×107Pa and not greater than 5.0×108Pa.

Abstract: A method for manufacturing a decorative object, which enables manufacturing of a decorative object, on which a random concavo-convex structure is formed, such as non-glossy finish, with a uniform product appearance, while maintaining operating efficiency is described. The method for manufacturing a decorative object includes the steps of coating a concavo-convex surface having a concavo-convex structure with a coating solution including a resin component, transferring the concavo-convex structure to a transfer surface to form a resin layer having the transfer surface, and to obtain a transfer member comprising the resin layer, and decorating a surface for decoration by pressing the transfer surface of the transfer member against the surface for decoration including a thermoplastic resin while heating.

Abstract: PROBLEM: To provide a finishing method for a painted surface that can reduce the number of processing steps, and that can shorten the finish polishing time and reduce the polishing area. RESOLUTION MEANS: The painted surface finishing method of an embodiment of the present disclosure includes a step of removing irregularities in a painted surface using a polishing material including a polishing layer with a structural surface where a plurality of three-dimensional elements are arranged, and providing a surface suitable for finish polishing; and a step of finish polishing the surface; wherein the polishing layer contains abrasive diamond particles with an average particle diameter of 0.5 to 5 ?m, and a binder containing an epoxy resin.

Abstract: Provided is an electrode catalyst that can exhibit sufficient performance, is suitable for mass production, and is suitable for reducing production costs, even when containing a relatively high concentration of chlorine. The electrode catalyst has a core-shell structure including a support; a core part that is formed on the support; and a shell part that is formed so as to cover at least one portion of the surface of the core part. A concentration of bromine (Br) species of the electrode catalyst as measured by X-ray fluorescence (XRF) spectroscopy is 500 ppm or less, and a concentration of chlorine (Cl) species of the electrode catalyst as measured by X-ray fluorescence (XRF) spectroscopy is 8,500 ppm or less.

Abstract: To provide electrode catalyst which has the catalyst activity and durability equal to or more than the Pt/Pd/C catalyst. The electrode catalyst has a support and catalyst particles supported on the support. The catalyst particle has the core part formed on the support and the shell part formed on the core part. The core part contains a Ti oxide and Pd, and the shell part contains Pt.

Abstract: To provide electrode catalyst which has the catalyst activity equal to or more than the Pt/Pd/C catalyst. The electrode catalyst 10A has a support 2 and catalyst particles 3a supported on the support. The catalyst particle has the core part 4 formed on the support, the first shell part 5a formed on the core part and the second shell part 6a formed on a part of the surface of the first shell part. The core part contains Pd, the first shell part contains Pt, and the second shell part contains the Ti oxide. A percentage of the Pt R1Pt (atom %) and a percentage of the Ti derived from the Ti oxide R1Ti (atom %) in an analytical region near a surface measured by X-ray photoelectron spectroscopy satisfy the conditions of the equation (1): 1.00?(R1Ti/R1Pt)?2.50.

Abstract: To provide electrode catalyst (core-shell catalyst) having an excellent catalyst activity which contributes to lower the cost of the PEFC. The electrode catalyst has catalyst particles supported an a support. The catalyst particle has a core part containing simple Pd and a shell part containing simple Pt. A percentage RC (atom %) of the carbon of the support and a percentage RPd (atom %) of the simple Pd in an analytical region near a surface measured by X-ray photoelectron spectroscopy (XPS) satisfy the conditions of the following equation (1): 2.15?[100×RPd/(RPd+RC)].

Abstract: Provided is an electrode catalyst in which the contents of chlorine (Cl) species and bromine (Br) species are reduced to a predetermined level or lower, capable of exhibiting sufficient catalyst performance. The electrode catalyst has a core-shell structure including a support, a core part formed on the support and a shell part formed to cover at least a part of the surface of the core part. A concentration of bromine (Br) species of the electrode catalyst as measured by X-ray fluorescence (XRF) spectroscopy is 400 ppm or less, and a concentration of chlorine (Cl) species of the electrode catalyst as measured by X-ray fluorescence (XRF) spectroscopy is 900 ppm or less.

Abstract: A method for manufacturing a decorative object, which enables manufacturing of a decorative object, on which a random concavo-convex structure is formed, such as non-glossy finish, with a uniform product appearance, while maintaining operating efficiency is described. The method for manufacturing a decorative object includes the steps of coating a concavo-convex surface having a concavo-convex structure with a coating solution including a resin component, transferring the concavo-convex structure to a transfer surface to form a resin layer having the transfer surface, and to obtain a transfer member comprising the resin layer, and decorating a surface for decoration by pressing the transfer surface of the transfer member against the surface for decoration including a thermoplastic resin while heating.

Abstract: A semiconductor device includes a plurality of semiconductor units each including a laminated substrate formed by laminating an insulating board and a circuit board and a semiconductor element joined to the circuit board using a joining material which irreversibly makes a phase transition into a solid-phase state. In addition, the semiconductor device may include a base plate to which each of the plurality of semiconductor units is joined using solder and a connection unit which electrically connects the plurality of semiconductor units in parallel.

Abstract: The semiconductor device includes an insulating substrate including an insulating plate and a circuit plate; a semiconductor chip having a front surface formed with an electrode and a rear surface fixed to the circuit plate; a printed circuit board including a metal layer, and facing the insulating substrate; a conductive bonding material disposed on the electrode; and a conductive post having a leading end portion electrically and mechanically connected to the electrode through the bonding material, a base portion electrically and mechanically connected to the metal layer, and a central portion. In the conductive post, a wetting angle of a surface of the leading end portion with respect to the molten bonding material is less than the wetting angle of a surface of the central portion.