Patents by Inventor Yoko Noto

Yoko Noto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9324572
    Abstract: Provided is a plasma etching method increasing the selectivity of a silicon nitride film in relation to the silicon oxide film or silicon functioning as a base. In a plasma etching method setting a pressure in a processing container as a predetermined level by exhausting a processing gas while supplying the processing gas into the processing container, generating plasma by supplying external energy to the processing container, and setting a bias applied to a holding stage holding a substrate in the processing container as predetermined value to selectively etch the silicon nitride film with respect to a silicon and/or silicon oxide film, the processing gas includes a plasma excitation gas, a CHxFy gas, and at least one oxidizing gas selected from the group consisting of O2, CO2, CO, and a flow rate of the oxidizing gas with respect to the CHxFy gas is set to be 4/9 or greater.
    Type: Grant
    Filed: March 3, 2011
    Date of Patent: April 26, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Masaru Sasaki, Kazuki Moyama, Masaki Inoue, Yoko Noto
  • Patent number: 9087798
    Abstract: An etching method can improve etching accuracy as well as secure selectivity when forming a dummy gate of a fin-type field effect transistor. In the etching method, the dummy gate of a fin-type field effect transistor is formed with a target object. In the etching method, a gate material deposited between multiple fins is etched by using surface wave plasma. A pressure in the etching method is 50 mTorr (6.67 Pa) or more, a frequency of a power to be applied to a mounting table configured to mount thereon the target object is in a range of 10 Hz or more to 200 Hz or less, and the power is pulse-modulated such that a duty ratio as a ratio of an ON-time to a pulse cycle is 50% or less.
    Type: Grant
    Filed: August 11, 2014
    Date of Patent: July 21, 2015
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hiroto Ohtake, Akinori Kitamura, Hironori Matsuoka, Yoko Noto
  • Publication number: 20150044877
    Abstract: An etching method can improve etching accuracy as well as secure selectivity when forming a dummy gate of a fin-type field effect transistor. In the etching method, the dummy gate of a fin-type field effect transistor is formed with a target object. In the etching method, a gate material deposited between multiple fins is etched by using surface wave plasma. A pressure in the etching method is 50 mTorr (6.67 Pa) or more, a frequency of a power to be applied to a mounting table configured to mount thereon the target object is in a range of 10 Hz or more to 200 Hz or less, and the power is pulse-modulated such that a duty ratio as a ratio of an ON-time to a pulse cycle is 50% or less.
    Type: Application
    Filed: August 11, 2014
    Publication date: February 12, 2015
    Inventors: Hiroto Ohtake, Akinori Kitamura, Hironori Matsuoka, Yoko Noto
  • Publication number: 20130029494
    Abstract: Provided is a plasma etching method increasing the selectivity of a silicon nitride film in relation to the silicon oxide film or silicon functioning as a base. In a plasma etching method setting a pressure in a processing container as a predetermined level by exhausting a processing gas while supplying the processing gas into the processing container, generating plasma by supplying external energy to the processing container, and setting a bias applied to a holding stage holding a substrate in the processing container as predetermined value to selectively etch the silicon nitride film with respect to a silicon and/or silicon oxide film, the processing gas includes a plasma excitation gas, a CHxFy gas, and at least one oxidizing gas selected from the group consisting of O2, CO2, CO, and a flow rate of the oxidizing gas with respect to the CHxFy gas is set to be 4/9 or greater.
    Type: Application
    Filed: March 3, 2011
    Publication date: January 31, 2013
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Masaru Sasaki, Kazuki Moyama, Masaki Inoue, Yoko Noto