Abstract: Provided is a solar cell and a manufacturing method thereof. The cell includes a back-contact electrode on a substrate, a light absorbing layer on the back-contact electrode, an anti-defect layer on the light absorbing layer, a buffer layer on the anti-defect layer, and an upper electrode on a buffer layer. The anti-defect layer may contain an alkaline earth metal.

Abstract: Provided is a method of manufacturing a synaptic device. The method includes forming a first electrode, forming a synaptic mimic layer including a hole transport layer and an electron transport layer on the first electrode, and forming a second electrode on the synaptic mimic layer, wherein the forming of the synaptic mimic layer includes forming the electron transport layer on the hole transport layer through a solution process.

Abstract: A solar cell according to embodiments of the inventive concept includes a back electrode on a substrate, a first light absorbing layer including gallium (Ga) and indium (In) on the back electrode, a first buffer layer on the first light absorbing layer, a first window layer on the first buffer layer, a second light absorbing layer including Ga on the first window layer, a second buffer layer on the second light absorbing layer, and a second window layer on the second buffer layer, wherein a composition ratio of (Ga)/(Ga+In) of the first light absorbing layer is lower than that of the second light absorbing layer.

Abstract: Provided is a method of manufacturing a transition metal chalcogenide thin film including providing a substrate having a transition metal film thereon, evaporating a chalcogen source to form a chalcogen material having a second molecular structure, decomposing the chalcogen material having the second molecular structure to form the chalcogen material having the first molecular structure, in which the first molecular structure includes relatively less atoms than the second molecular structure, and providing the chalcogen material having the first molecular structure on a transition metal film.

Abstract: Provided is a chalcogen gas monitoring device. The chalcogen gas monitoring device includes a reaction unit which varies in resistance due to reaction occurring by contact between chalcogen gas and a metal foil, a measurement unit measuring a resistance value according to the variation in resistance, a calculation unit measuring at least one of whether the chalcogen gas exists and a concentration of the chalcogen gas according to the resistance value, and a display unit outputting the measured results; wherein the metal foil is replaced according to results obtained by the reaction between the metal foil and the chalcogen gas.

Abstract: A method of manufacturing a solar cell includes forming a buffer layer between an optical absorption layer and a window electrode layer. Forming the buffer layer includes depositing a metal material on the optical absorption layer, supplying a non-metal material on the optical absorption layer, supplying a gas material including oxygen atoms on the optical absorption layer, and reacting the metal material with the non-metal material. The gas material reacts with the metal material and the non-metal material to form a metal sulfur oxide on the optical absorption layer.

Abstract: Provided is a method of manufacturing a solar cell. The method includes: preparing a substrate with a rear electrode; and forming a copper indium gallium selenide (CIGS) based light absorbing layer on the rear electrode at a substrate temperature of room temperature to about 350° C., wherein the forming of the CIGS based light absorbing layer includes projecting an electron beam on the CIGS based light absorbing layer.

Abstract: Provided are a solar cell and a method of fabricating the same. The method may include forming a light absorbing layer on a substrate, forming a window electrode on the light absorbing layer, and attaching a light scattering sheet with a concavo-convex structure to the window electrode. The light scattering sheet may be a single layer made of adhesive material.

Abstract: Provided is a single junction type GIGS thin film solar cell, which includes a CIGS light absorption layer manufactured using a single junction. The single junction type GIGS thin film solar cell includes a substrate, a back contact deposited on the substrate, a light absorption layer deposited on the back contact and including a P type GIGS layer and an N type GIGS layer coupled to the P type CIGS layer using a single junction, and a reflection prevention film deposited on the light absorption layer.

Abstract: Methods for manufacturing a solar cell are provided. The method may include forming a lower electrode on a substrate, forming a light absorption layer on the lower electrode, forming a buffer layer on the light absorption layer, and forming a window layer on the buffer layer. The window layer may include an intrinsic layer and the transparent electrode which have electric characteristics different from each other, respectively. The intrinsic layer and the transparent electrode may be formed by a sputtering process using a single target formed of metal oxide doped with impurities.

Abstract: Provided is a single junction type CIGS thin film solar cell, which includes a CIGS light absorption layer manufactured using a single junction. The single junction type CIGS thin film solar cell includes a substrate, a back contact deposited on the substrate, a light absorption layer deposited on the back contact and including a P type CIGS layer and an N type CIGS layer coupled to the P type CIGS layer using a single junction, and a reflection prevention film deposited on the light absorption layer.

Abstract: Provided is a sunlight complex module, which includes a photovoltaic conversion part that generates electrical energy from sunlight, a heat collector board attached to a bottom of the photovoltaic conversion part to collect heat from a portion of the sunlight, which has a wavelength to pass through the photovoltaic conversion part, a heat pipe attached to the heat collector board, and transferring thermal energy collected in the heat collector board, to an outside thereof, and a mold sealed to maintain a vacuum therein. The photovoltaic conversion part, the heat collector board, and the heat pipe are accommodated in the mold.

Abstract: Methods for manufacturing a solar cell are provided. The method may include forming a lower electrode on a substrate, forming a light absorption layer on the lower electrode, forming a buffer layer on the light absorption layer, and forming a window layer on the buffer layer. The window layer may include an intrinsic layer and the transparent electrode which have electric characteristics different from each other, respectively. The intrinsic layer and the transparent electrode may be formed by a sputtering process using a single target formed of metal oxide doped with impurities.

Abstract: Provided are a method and device for separating and converting multiband signals. The device includes a photoelectric converter for converting an externally received optical signal into an electrical signal, a first switch for separating the converted electrical signal into signals according to frequency bands, a first mobile communication band-pass amplifier for amplifying a mobile communication network signal of the signals separated by the first switch, a broadband up-converter for up-converting a baseband signal of the signals separated by the first switch into a broadband signal, a first broadband amplifier for amplifying the broadband signal output from the broadband up-converter, and a transmitter for wirelessly transmitting the signals amplified by the first mobile communication band-pass amplifier and the first broadband amplifier.

Abstract: Provided is a method of manufacturing a solar cell. The method includes: preparing a substrate with a rear electrode; and forming a copper indium gallium selenide (CIGS) based light absorbing layer on the rear electrode at a substrate temperature of room temperature to about 350° C., wherein the forming of the CIGS based light absorbing layer includes projecting an electron beam on the CIGS based light absorbing layer.

Abstract: Provided is a compound semiconductor solar cell. The compound semiconductor solar cell may include a back electrode provided on a substrate, a hole injection layer provided on the back electrode, a copper indium gallium selenide (CIGS) based optical absorption layer provided on the hole injection layer, and a front transparent electrode provided on the optical absorption layer.

Abstract: Provided is a compound semiconductor solar cell. The compound semiconductor solar cell includes: an impurity diffusion preventing layer disposed on a substrate, added with an alkali component, and formed of a metal layer of one of Cr, Co, or Cu; a rear electrode disposed on the impurity diffusion preventing layer and formed of Mo; a CIGS based light absorbing layer disposed on the rear electrode; and a front transparent electrode disposed on the light absorbing layer.

Abstract: Provided is a single junction type CIGS thin film solar cell, which includes a CIGS light absorption layer manufactured using a single junction. The single junction type CIGS thin film solar cell includes a substrate, a back contact deposited on the substrate, a light absorption layer deposited on the back contact and including a P type CIGS layer and an N type CIGS layer coupled to the P type CIGS layer using a single junction, and a reflection prevention film deposited on the light absorption layer.

Abstract: Provided are a CIGS solar cell and a method of fabricating the CIGS solar cell. In the method, a buffer layer exposing protrusions is formed. Then, a window electrode layer having an uneven surface conforming with the protrusions of the buffer layer is formed. Thus, an additional process for making the upper surface of a window electrode layer rough is unnecessary in order to decrease surface reflectance of incident sunlight and increase the solar cell efficiency, so that productivity can be improved.

Abstract: A solar cell and method of fabricating the same are provided. The solar cell includes a metal electrode layer, an optical absorption layer, a buffer layer, and a transparent electrode layer. The metal electrode layer is disposed on a substrate. The optical absorption layer is disposed on the metal electrode layer. The buffer layer is disposed on the optical absorption layer and includes an indium gallium nitride (InxGa1-xN). The transparent electrode layer is disposed on the buffer layer.