Abstract: The storage device includes a storage unit configured to store data, an error controlling unit configured to correct an error of the data read out from the storage unit according to at least one read level, and a read level controlling unit configured to control the at least one read level when the error is uncorrectable. The read level controlling unit is configured to measure a distribution of memory cells of the storage unit, configured to filter the measured distribution, and configured to reset the at least one read level based on the filtered distribution.

Abstract: A method setting a read voltage to minimize data read errors in a semiconductor memory device including multi-bit memory cells. In the method, a read voltage associated with a minimal number of read data error is set based on a statistic value of a voltage distribution corresponding to each one of a plurality of voltage states.

Abstract: Provided is a read method for a memory system. The read method determines whether a read data error is correctable. The read method applies a plurality of read operations at a set read voltage level to identify erasure candidates, when the error is uncorrectable. The read method performs erasure decoding using an error correction code or an error detection code for the erasure candidates.

Abstract: Disclosed are an apparatus and method of determining an optimal cyclic delay value. The method of determining the optimal cyclic delay value includes determining a Signal-to-Interference and Noise Ratio (SINR) function depending on a diversity order; determining a channel estimation error variance function; and determining an SINR being required for a system according to the SINR function and the channel estimation error variance function.

Abstract: A storage device includes a controller unit and a memory cell array. The controller unit is for outputting data through a first data path or a second data path according to a property of externally supplied input data. The memory cell array includes a first memory and a second memory, and receives and stores the data from the controller unit output through the first and second data paths. The first memory has a different memory cell structure than the second memory.

Abstract: In a method of operating a nonvolatile memory device, data is read using a read level, and a range of logic values for erasure-decoding the read data is set. The bits of the read data corresponding to the set range of logic values are set as erasure bits, and an erasure decoding operation is performed.

Abstract: A data processing system includes an error checking and correction (ECC) encoding circuit, an integrated circuit memory and a code rate control circuit. The ECC encoding circuit is configured to selectively apply a plurality of unique ECC code rates to write data received by the data processing system during an operation to convert the write data into encoded data, in response to a code rate selection signal. The integrated circuit memory includes a plurality of storage regions therein. These storage regions are configured to receive respective portions of the encoded data from the ECC encoding circuit. The code rate control circuit is configured to generate the code rate selection signal. This code rate selection signal has a value that specifies the corresponding ECC code rate to be applied to respective portions of the write data.

Abstract: A nonvolatile memory device performs interleaving of data to be stored in each wordline (memory page), or of data to be stored in multiple wordlines (memory pages). The NVM includes a memory cell array, a storage circuit of a de-interleaving circuit, and a read/write circuit. The storage circuit of the de-interleaving circuit is configured to store program data to be written interleaved into the memory cell array. The read/write circuit is configured to control the interleaved/deinterleaved data input/output between the memory cell array and the storage circuit. The write operation unit size may be the same or different from the read operation unit size. The storage circuit stores the program data of integer k times of a common divisor of a read operation unit size and a write operation unit size of the read/write circuit, wherein k may equal ‘m’ (the number of bits stored in each memory cell of the NVM).

Abstract: A data processing system includes a memory configured to receive data and an encoder configured to encode data being transferred to the memory. The encoder includes an outer encoder configured to generate an outer codeword by encoding the data being transferred to the memory, and an inner encoder configured to generate a plurality of inner codewords by encoding the outer codeword.

Abstract: Provided is a data processing method in a semiconductor memory device. The data processing method arranges data, which is to be programmed in a row and column of a nonvolatile memory device, in a row or column direction. The data processing method encodes the programmed data into a modulation code in the row or column direction such that adjacent pairs of memory cells of the nonvolatile memory device are prevented from being programmed into first and second states.

Abstract: A decoding method includes performing a first decoding method and performing a second decoding method when decoding of the first decoding method fails. The first decoding method includes updating multiple variable nodes and multiple check nodes using probability values of received data. The second decoding method includes selecting at least one variable node from among the multiple variable nodes; correcting probability values of data received in the selected at least one variable node; updating the variable nodes and the check nodes using the corrected probability values; and determining whether decoding of the second decoding method is successful.

Abstract: A 1-bit error correction method is provided. In the method, a variable node at which an error has occurred is detected based on a number of unsatisfied check nodes that do not satisfy a parity condition among check nodes connected to each of variable nodes and an error in a bit corresponding to the detected variable node is corrected.

Abstract: A non-volatile semiconductor memory device and related method of determining a read voltage are disclosed. The non-volatile semiconductor memory device includes; a memory cell array including a plurality of memory cells, a read voltage determination unit configured to determine an optimal read voltage by comparing reference data obtained during a program operation with comparative data obtained during a subsequent read operation and changing a current read voltage to a new read voltage based on a result of the comparison, and a read voltage generation unit configured to generate the new read voltage in response to a read voltage control signal provided by the read voltage determination unit.

Abstract: A method, implemented by at least an error correction code (ECC) decoder and a controller, estimates and corrects errors in memory cells. The method includes identifying a first candidate group of memory cells having an error-generation possibility using a first method for error estimation; identifying a second candidate group of memory cells having an error-generation possibility using a second method for error estimation; and correcting errors in at least one cell commonly included in the first and second candidate groups.

Abstract: Provided is a memory device. The memory device includes a word line and a plurality of memory cells connected to the word line. The plurality of memory cells forms a page, and the number of sectors configuring the page and the size of each of the sectors can be changed.

Abstract: Nonvolatile memory devices include support memory cell recovery during operations to erase blocks of nonvolatile (e.g., flash) memory cells. A nonvolatile memory system includes a flash memory device and a memory controller electrically coupled to the flash memory device. The memory controller is configured to control memory cell recovery operations within the flash memory device by issuing a first instruction(s) to the flash memory device that causes erased memory cells in the block of memory to become at least partially programmed memory cells and then issuing a second instruction(s) to the flash memory device that causes the at least partially programmed memory cells become fully erased.

Abstract: A data storage device receives write data and includes a controller configured to determine a characteristic of the write data and provide a first control signal in response to the determined characteristic, a randomizer configured to selectively randomize or not randomize the write data in response to the first control signal to thereby generate randomized write data, and a data storage unit configured to store the randomized write data.

Abstract: Provided are data processing methods for a non-volatile memory. The data processing methods include obtaining read data and erasure information from the non-volatile memory and correcting an error in the read data by referencing the erasure information obtained from the non-volatile memory. Memory systems may be provided. Such memory systems may include a non-volatile memory and a memory controller that is operable to perform an error correction operation according to the methods described herein.

Abstract: The memory device selects any one of a first memory cell and a second memory cell based on a number of times that the first memory cell is erased, an elapsed time after the first memory cell is erased, a number of times that the second memory cell is erased, and an elapsed time after the second memory cell is erased, and program data in the selected memory cell. The memory device may improve distribution of threshold voltage of memory cells and endurance of the memory cells.

Abstract: Example embodiments may provide a memory device and memory data programming method. The memory device according to example embodiments may encode a first data page to generate at least one first codeword and encode a second data page to generate a second codeword. The memory device may generate the first codeword with at least one of a maximum value of a number of successive ones and a second maximum value of a number of successive zeros. The memory device may program the at least one first codeword and the at least one second codeword to a plurality of multi-bit cells.