Abstract: A bobbin installation unit includes a bobbin, a film supply unit configured to supply an electrode-connecting film to the bobbin, a transfer unit configured to transfer the electrode-connecting film installed in the film supply unit to the bobbin installation unit, an adhesive tape attaching unit installed above the bobbin installation unit and configured to attach an end portion of the electrode-connecting film drawn out to the transfer unit to the bobbin. It also includes a double-sided tape attaching unit configured to attach a double-sided tape to the electrode-connecting film wound on the bobbin, and a frame body on which the adhesive tape attaching unit and the double-sided tape attaching unit are movably installed.

Abstract: An embodiment relaxation seat for a vehicle includes a seat cushion lower frame configured to be mounted on a seat rail, a seat cushion upper frame connected to the seat cushion lower frame in a tilting-enabled manner, a seat back frame connected to the seat cushion upper frame, a locking device mounted at a predetermined position on the seat cushion upper frame, a front link hinge-connecting between the seat cushion upper frame and a front end portion of the seat cushion lower frame, a rear link hinge-connecting between the seat cushion upper frame and a rear end portion of the seat cushion lower frame, and a support bar connecting between the locking device and the front link in a manner that is movable backward and forward and configured to support the front link for rotation or fixation thereof.

Abstract: A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: A blankmask for extreme ultraviolet lithography includes a substrate, a reflective layer formed on the substrate, and a phase shift layer formed on the reflective layer. The phase shift layer contains niobium (Nb), and is made of a material containing one of tantalum (Ta), chromium (Cr), and ruthenium (Ru). A phase shift layer containing Nb and Ta has a relative reflectance of 5 to 20%, a phase shift layer containing Nb and Cr has a relative reflectance of 9 to 15%, and a phase shift layer containing Nb and Ru has a relative reflectance of 20% or more. The phase shift layer has a phase shift amount of 170 to 230°, and has a surface roughness of 0.5 nmRMS or less. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: A method for protecting data based on a private set union (PSU) protocol includes: generating a Boolean vector for a first information set, based on whether or not each of a plurality of first groups that are groups of elements of the first information set stored in a first computing device is the same as each of a plurality of second groups that are groups of elements of a second information set stored in a second computing device, obtaining a random vector for the first information set as a result of shuffling performed by using the Boolean vector generated by the first computing device as an input and using order information and encryption information selected by the second computing device as inputs, and generating information on a union of the first information set and the second information set based on the random vector.

Abstract: Disclosed is an intelligent distributed storage service system comprising: a web server configured to receive selection information including a virtual storage capacity necessary for a virtual storage service, the number of storage nodes, storage node types, and a distribution method from the terminal when the terminal requests the virtual storage service; at least one storage node configured to generate a virtual disk volume according to external control; a control center server configured to monitor available capacities and usage states of the storage nodes, determine a storage node corresponding to the selection information among the monitored storage nodes, and control the determined storage node to generate the virtual disk volume; and a database (DB) configured to store information of the storage node and virtual disk volume information of the user.

Abstract: Disclosed is a virtual storage service system comprising: a web server configured to receive selection information including a virtual storage capacity necessary for a virtual storage service, the number of storage nodes, storage node types, a distribution method, and a selected storage node from the terminal when the terminal requests the virtual storage service; a control center server configured to exert control with reference to the selection information so that a virtual disk volume is generated; at least one storage node configured to generate the virtual disk volume according to the control of the control center server; and a database (DB) configured to store information of the storage nodes and virtual disk volume information of the user.

Abstract: An array of electrodisplacive actuators is prepared by first forming on an electrodisplacive ceramic wafer a plurality of regularly spaced vertically directional trenches running parallel to each other, followed by forming a first conductive metallic layer thereon. A multiplicity of regularly spaced horizontally directional trenches running parallel to each other and running normal to the plurality of vertically directional trenches is then formed on the thus prepared ceramic wafer. A ceramic block having a top and a bottom surfaces is then formed by bonding together two ceramic wafers, prepared using the above described procedures. The top and the bottom surfaces of the ceramic block are removed until the first conductive metallic layer is exposed, and then a series of regularly spaced vertically directional grooves is formed thereon. Finally, a second conductive metallic layer is deposited on a bottom and side surfaces of each of the grooves to thereby form the array of electrodisplacive actuators.