Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

Abstract: A carrying structure including a carrying main body, two engaging components, two driven linkages, and a driving linkage is provided. The carrying main body is adapted to carry an expansion card. The two engaging components are disposed on opposite ends of the carrying main body, each of the engaging components is adapted to be actuated to an engaging state for being engaged to a server main body, and each of the engaging components is adapted to be actuated to a releasing state for being separated from the server main body. The two driven linkages are respectively connected to the two engaging components. The driving linkage is connected between the two driven linkages and adapted to drive the two engaging components to be simultaneously actuated between the engaging state and the releasing state by the two driven linkages. In addition, a server having the carrying structure is also provided.

Abstract: A method for processing a substrate includes positioning a silicon substrate in a deposition chamber. One or more intermediate layers are deposited on a surface of the silicon. The one or more intermediate layers can include strontium, which combines with the silicon to form strontium silicide. Alternatively, the one or more intermediate layers comprise germanium. A layer of amorphous strontium titanate is deposited on the one or more intermediate layers in a transient environment in which oxygen pressure is reduced while temperature is increased. The substrate is then exposed to an oxidizing and annealing atmosphere that oxidizes the one or more intermediate layers and converts the layer of amorphous strontium titanate to crystalline strontium titanate.

Abstract: A method of forming a film comprises growing, using a deposition system, at least a portion of the film and analyzing, using a RHEED instrument, the at least a portion of the film. Using a computer, data is acquired from the RHEED instrument that is indicative of a stoichiometry of the at least a portion of the film. Using the computer, adjustments to one or more process parameters of the deposition system are calculated to control stoichiometry of the film during subsequent deposition. Using the computer, instructions are transmitted to the deposition system to execute the adjustments of the one or more process parameters. Using the deposition system, the one or more process parameters are adjusted.

Abstract: A method of extracting oil from biological raw material includes creating a slurry of biological raw material, raising or lowering a pH of the slurry to separate lipid and protein components in the slurry, further separating the lipid and protein components into a first lipid rich phase and a protein rich phase, adjusting a pH of the first lipid rich phase to a point at which additional proteins in the first lipid rich phase coagulate, and recovering a second lipid rich phase from the additional coagulated proteins.

Abstract: A method for removing a native oxide film from a semiconductor substrate includes repetitively depositing layers of germanium on the native oxide and heating the substrate causing the layer of germanium to form germanium oxide, desorbing a portion of the native oxide film. The process is repeated until the oxide film is removed. A subsequent layer of strontium titanate can be deposited on the semiconductor substrate, over either residual germanium or a deposited germanium layer. The germanium can be converted to silicon germanium oxide by exposing the strontium titanate to oxygen.

Abstract: The present disclosure discloses a method for synthesizing a diaza-bridged compound and a diaza-bridged compound, belonging to the field of organic synthesis. The present disclosure includes the following reaction: in the formula, R is aryl, substituted aryl, alkyl or haloalkyl, Ra is any one of H, 2-nitrobenzenesulfonyl, 4-nitrobenzenesulfonyl or 2,4-dinitrobenzenesulfonyl, n=1 or 2. Since compound 2 and NH3 are used as raw materials, the present disclosure can not only effectively shorten the process flow and save process costs, but also improve the reaction yield to a certain extent. The present disclosure also provides a diaza-bridged compound, where the structural formula thereof is in the formula, Ra is any one of 2-nitrobenzenesulfonyl, 4-nitrobenzenesulfonyl or 2,4-dinitrobenzenesulfonyl.

Abstract: Systems, apparatuses, and methods for modifying metadata associated with database objects obtained from providers, such as cloud providers, are disclosed. Modifying metadata associated with database objects obtained from cloud providers may include identifying resources in a computer network that originate from providers, such as cloud providers that do not have associated metadata. A user interface that includes the resources may be generated, and the resource may receive input to select the resources and a descriptor that may be associated with the resources. The selected resources may then be associated, in a configuration management dataset, with metadata derived from the selected descriptor. The metadata may indicate an association of the selected resources to a parameter.

Abstract: A device includes a substrate, a dielectric layer on the substrate, a waveguide within the dielectric layer, and a photodetector optically coupled to the waveguide. The photodetector is disposed above the waveguide layer and is monolithically integrated with the substrate. The photodetector is configured to operate at low temperatures, such as below about 50 K or about 20 K. In some embodiments, the monolithic photonic device includes thermal isolation structures and optical isolation structures. Techniques for manufacturing the monolithic photonic device, including the thermal isolation structures and optical isolation structures, are also described.

Abstract: A computational instance may contain queues configured to hold work items. The work items may be representations of user submissions requesting actions from a plurality of agents. The computational instance may also contain computing devices configured to: (a) obtain a set of assignment rules that specify mappings between (i) respective selection criteria for the assignment rules, and (ii) one or more candidate agents from the plurality of agents that can be assigned to address the work items with content that match the respective selection criteria, (b) read, from the queues, a work item corresponding to a user submission, (c) iterate through the assignment rules according to an ordering until a particular assignment rule with associated selection criteria that matches content of the work item is found, and (d) assign the work item to a particular agent from the one or more candidate agents.

Abstract: A chassis includes a cage. The cage includes a body, a clamping member, and a buckling member. The body includes a first sliding portion, a fastening portion, and an accommodating area. The accommodating area includes a guide rail portion. The guide rail portion and the first sliding portion are disposed on two sides of the accommodating area, respectively. The fastening portion is disposed on one side of the accommodating area away from the guide rail portion. The clamping member is slidably disposed on the first sliding portion. The buckling member is disposed on the clamping member. The buckling member is adapted to be in contact with the fastening portion.

Abstract: A method for processing a substrate includes positioning a silicon substrate in a deposition chamber. One or more intermediate layers are deposited on a surface of the silicon. The one or more intermediate layers can include strontium, which combines with the silicon to form strontium silicide. Alternatively, the one or more intermediate layers comprise germanium. A layer of amorphous strontium titanate is deposited on the one or more intermediate layers in a transient environment in which oxygen pressure is reduced while temperature is increased. The substrate is then exposed to an oxidizing and annealing atmosphere that oxidizes the one or more intermediate layers and converts the layer of amorphous strontium titanate to crystalline strontium titanate.

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

Abstract: Chemical entities that are kinase inhibitors, pharmaceutical compositions and methods of treatment of cancer are described.

Abstract: Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.

Abstract: A device includes a voltage regulator circuit, a power switch circuit, and a control circuit. The voltage regulator circuit generates an output voltage at an output terminal. The power switch circuit is coupled to the voltage regulator circuit. The control circuit receives a first control signal and generates a second control signal that includes a first portion gradually declining between a first time and a second time later than the first time. When the voltage regulator circuit is turned off and a logic state of the first control signal changes at the first time, the power switch circuit is turned on at the second time, in response to the second control signal, to adjust the output voltage.

Abstract: In some embodiments method comprises depositing a ferroelectric layer on a top surface of a semiconductor wafer and forming one or more gaps in the ferroelectric layer. The one or more gaps can be formed on a repetitive spacing to relieve stresses between the ferroelectric layer and the semiconductor wafer. A first dielectric layer is deposited over the ferroelectric layer and the first dielectric layer is planarized to fill in the gaps. A second dielectric layer is formed between the ferroelectric layer and the semiconductor wafer. The second dielectric layer can be formed by annealing the wafer in an oxidizing atmosphere such that an upper portion of the semiconductor substrate forms an oxide layer between the semiconductor substrate and the ferroelectric layer.

Abstract: The present disclosure relates to an electronic device, a method, and a computer-readable medium for quickly switching channels. An electronic device is provided. The electronic device includes: a memory having instructions stored thereon; and a processor. The processor is configured to execute the instructions stored on the memory to cause the electronic device to execute the following operations: playing a first program of a first channel, wherein the first program is a live program; receiving user input when playing the first program; and in response to receiving the user input, switching from the first channel to a second channel and playing a second program of the second channel, wherein the second program is an OTT program.

Abstract: The present disclosure describes a method to form a bonded semiconductor structure. The method includes forming a first bonding layer on a first wafer, forming a debonding structure on a second wafer, forming a second bonding layer on the debonding structure, bonding the first and second wafers with the first and second bonding layers, and debonding the second wafer from the first wafer via the debonding structure. The debonding structure includes a first barrier layer, a second barrier layer, and a water-containing dielectric layer between the first and second barrier layers.

Abstract: There is provided a method of receiving a transmitted signal over a time-varying channel. The method includes: obtaining a received symbol signal in frequency domain based on the transmitted signal; performing a first channel estimation based on the received symbol signal to obtain a plurality of first estimated BEM coefficients; performing a first equalization based on the received symbol signal and the plurality of first estimated BEM coefficients to obtain a plurality of first detected source symbols; and performing one or more rounds of a second channel estimation and a second equalization.