Patents by Inventor Yong Seon Song
Yong Seon Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11233176Abstract: A semiconductor device according to an embodiment may include a light emitting structure, a first electrode, a second electrode, a first insulating reflective layer, a second insulating reflective layer, a first bonding pad, and a second bonding pad. The light emitting structure may include a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The first insulating reflective layer may be disposed on the first electrode and the second electrode, and may include a first opening exposing an upper surface of the first electrode. The second insulating reflective layer may be disposed on the first electrode and the second electrode, and disposed spaced apart from the first insulating reflective layer, and may include a second opening exposing an upper surface of the second electrode. The first bonding pad may be electrically connected to the first electrode through the first opening.Type: GrantFiled: January 18, 2018Date of Patent: January 25, 2022Assignee: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.Inventors: Chang Hyeong Lee, Gyu Hyeong Bak, Yong Seon Song, Byung Yeon Choi, Sung Min Hwang
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Publication number: 20210135059Abstract: A semiconductor device according to an embodiment may include a light emitting structure, a first electrode, a second electrode, a first insulating reflective layer, a second insulating reflective layer, a first bonding pad, and a second bonding pad. The light emitting structure may include a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The first insulating reflective layer may be disposed on the first electrode and the second electrode, and may include a first opening exposing an upper surface of the first electrode. The second insulating reflective layer may be disposed on the first electrode and the second electrode, and disposed spaced apart from the first insulating reflective layer, and may include a second opening exposing an upper surface of the second electrode. The first bonding pad may be electrically connected to the first electrode through the first opening.Type: ApplicationFiled: January 18, 2018Publication date: May 6, 2021Applicant: LG INNOTEK CO., LTD.Inventors: Chang Hyeong LEE, Gyu Hyeong BAK, Yong Seon SONG, Byung Yeon CHOI, Sung Min HWANG
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Patent number: 9893118Abstract: A light emitting device that includes a conductive substrate, an insulating layer on the conductive substrate, a plurality of light emitting device cells on the insulating layer, a connection layer electrically interconnecting the light emitting device cells, a first contact section electrically connecting the conductive substrate with at least one light emitting device cell, and a second contact section on the at least one light emitting device cell.Type: GrantFiled: October 12, 2012Date of Patent: February 13, 2018Assignee: LG INNOTEK CO., LTD.Inventors: Geun Ho Kim, Yu Ho Won, Yong Seon Song
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Patent number: 9035325Abstract: A light emitting device (LED) package includes a submount and a light emitting chip. The submount has a chip region and a supporting region over which the chip is mounted, and an encapsulating material and fluorescent material are formed over the chip. The coverage area of encapsulating and fluorescent materials is substantially coextensive with the chip or chip region, and a first area between an edge of the chip region and an edge of the supporting region is greater than a second area between the edge of the chip region and the chip.Type: GrantFiled: October 25, 2010Date of Patent: May 19, 2015Assignee: LG INNOTEK CO., LTD.Inventors: Yong Seon Song, Jung Ha Hwang
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Publication number: 20140124810Abstract: A light emitting device includes a substrate and a plurality of protrusions protruding from a top surface of the substrate. A first semiconductor layer is provided on top surfaces of the protrusions and a plurality of seed patterns protrudes from a bottom surface of the first semiconductor layer toward the protrusions. A medium layer is provided between the protrusions and a light emitting structure on a top surface of the first semiconductor layer. The bottom surface of the first semiconductor layer is located at a higher position than that of each of the protrusions, and the first semiconductor layer contacts a c-plane of each protrusion.Type: ApplicationFiled: October 31, 2013Publication date: May 8, 2014Inventors: Sang Il Kim, Dong Hun Kang, Jong Ho Na, Yong Seon Song
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Patent number: 8669545Abstract: A light emitting device includes an active layer including a quantum barrier and a quantum well, a first conductive type semiconductor layer disposed at one side of the active layer, and a second conductive type semiconductor layer disposed at the other side of the active layer, wherein the first conductive type semiconductor layer or the second conductive type semiconductor layer includes a main barrier layer, and the main barrier layer includes a plurality of sub barrier layers and a basal layer disposed between the plurality of sub barrier layers. The plurality of sub barrier layers includes a first section in which energy band gaps of the plurality of sub barrier layers are increased and a second section in which energy band gaps of the plurality of sub barrier layers are decreased.Type: GrantFiled: February 7, 2012Date of Patent: March 11, 2014Assignee: LG Innotek Co., Ltd.Inventors: Yong Seon Song, Yong Tae Moon
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Patent number: 8587016Abstract: Provided are a light emitting device package and a lighting system comprising the same. The light emitting device package comprises a package body having an inclined side surface and a light emitting device on the inclined side surface of the package body.Type: GrantFiled: February 19, 2010Date of Patent: November 19, 2013Assignee: LG Innotek Co., Ltd.Inventor: Yong Seon Song
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Patent number: 8426844Abstract: A light emitting device includes an active layer having quantum walls and quantum wells, a first conductive type semiconductor layer on one side of the active layer, a second conductive type semiconductor layer on the other side of the active layer, and an interfacial layer arranged between the active layer and the first conductive type semiconductor layer or between the active layer and the second conductive type semiconductor layer, wherein the interfacial layer includes barrier layers and basal layers provided between the barrier layers, wherein an energy bandgap of each of the barrier layers increases from the first conductive type semiconductor layer or the second conductive type semiconductor layer to an active layer direction linearly, and greatest energy bandgaps of the barrier layers are different from one another.Type: GrantFiled: July 8, 2011Date of Patent: April 23, 2013Assignee: LG Innotek Co., Ltd.Inventors: Yong Tae Moon, Yong Seon Song, Jong hak Won, Jeong Sik Lee, Jung Hun Jang
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Patent number: 8384117Abstract: Provided are a light emitting device package and a lighting system comprising the same. The light emitting device package comprises a package body having a trench, a metal layer within the trench, and a light emitting device over the metal layer.Type: GrantFiled: February 17, 2010Date of Patent: February 26, 2013Assignee: LG Innotek Co., Ltd.Inventors: Yong Seon Song, Kyoung Woo Jo
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Patent number: 8299477Abstract: A light emitting device that includes a conductive substrate, an insulating layer on the conductive substrate, a plurality of light emitting device cells on the insulating layer, a connection layer electrically interconnecting the light emitting device cells, a first contact section electrically connecting the conductive substrate with at least one light emitting device cell, and a second contact section on the at least one light emitting device cell.Type: GrantFiled: October 13, 2008Date of Patent: October 30, 2012Assignee: LG Innotek Co., Ltd.Inventors: Geun Ho Kim, Yong Seon Song, Yu Ho Won
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Patent number: 8269249Abstract: A light emitting device package including a package body including a plurality of discrete and separated three-dimensional-shaped indentations formed in an undersurface of the package body and configured to dissipate heat generated in the package body, a cavity in the package body, and a light emitting device including at least one emitting diode in the cavity of the package body and configured to emit light.Type: GrantFiled: December 11, 2009Date of Patent: September 18, 2012Assignee: LG Innotek Co., Ltd.Inventor: Yong Seon Song
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Patent number: 8217416Abstract: Provided are a light emitting device package and a method for fabricating the same. The light emitting device package comprises a substrate; a light emitting device on the substrate; a zener diode comprising a first conductive type impurity region and two second conductive type impurity regions, the first conductive type impurity region being disposed in the substrate, the two second conductive type impurity regions being separately disposed in two areas of the first conductive type impurity region; and a first electrode layer and a second electrode layer, each of them being electrically connected to the second conductive type impurity regions and the light emitting device.Type: GrantFiled: November 3, 2008Date of Patent: July 10, 2012Assignee: LG Innotek Co., Ltd.Inventors: Geun Ho Kim, Yong Seon Song, Yu Ho Won
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Publication number: 20120132890Abstract: A light emitting device includes an active layer including a quantum barrier and a quantum well, a first conductive type semiconductor layer disposed at one side of the active layer, and a second conductive type semiconductor layer disposed at the other side of the active layer, wherein the first conductive type semiconductor layer or the second conductive type semiconductor layer includes a main barrier layer, and the main barrier layer includes a plurality of sub barrier layers and a basal layer disposed between the plurality of sub barrier layers. The plurality of sub barrier layers includes a first section in which energy band gaps of the plurality of sub barrier layers are increased and a second section in which energy band gaps of the plurality of sub barrier layers are decreased.Type: ApplicationFiled: February 7, 2012Publication date: May 31, 2012Inventors: Yong Seon SONG, Yong Tae MOON
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Patent number: 8188507Abstract: Provided are a light emitting device package and a method for fabricating the same. The light emitting device package comprises a substrate; a light emitting device on the substrate; a zener diode comprising a first conductive type impurity region and two second conductive type impurity regions, the first conductive type impurity region being disposed in the substrate, the two second conductive type impurity regions being separately disposed in two areas of the first conductive type impurity region; and a first electrode layer and a second electrode layer, each of them being electrically connected to the second conductive type impurity regions and the light emitting device.Type: GrantFiled: November 3, 2008Date of Patent: May 29, 2012Assignee: LG Innotek Co., Ltd.Inventors: Geun Ho Kim, Yong Seon Song, Yu Ho Won
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Publication number: 20120119254Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a first conductive type first semiconductor layer, an active layer, a second conductive type second semiconductor layer, a reliability enhancement layer, and a second conductive type third semiconductor layer. The active layer is disposed on the first conductive type first semiconductor layer. The second conductive type second semiconductor layer is disposed on the active layer. The reliability enhancement layer is disposed on the second conductive type second semiconductor layer. The second conductive type third semiconductor layer is disposed on the reliability enhancement layer and comprises a light extraction pattern. The reliability enhancement layer and the active layer are spaced apart from each other by a distance of 0.3 ?m to 5 ?m.Type: ApplicationFiled: January 25, 2012Publication date: May 17, 2012Inventors: Yong Tae MOON, Yong Seon Song, Sung Hoon Jung, Joong Seo Park, Sang Jun Lee, Jeong Tak Oh, Rak Jun Choi
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Publication number: 20120033444Abstract: A light emitting device includes an active layer having quantum walls and quantum wells, a first conductive type semiconductor layer on one side of the active layer, a second conductive type semiconductor layer on the other side of the active layer, and an interfacial layer arranged between the active layer and the first conductive type semiconductor layer or between the active layer and the second conductive type semiconductor layer, wherein the interfacial layer includes barrier layers and basal layers provided between the barrier layers, wherein an energy bandgap of each of the barrier layers increases from the first conductive type semiconductor layer or the second conductive type semiconductor layer to an active layer direction linearly, and greatest energy bandgaps of the barrier layers are different from one another.Type: ApplicationFiled: July 8, 2011Publication date: February 9, 2012Inventors: Yong Tae Moon, Yong Seon Song, Jong hak Won, Jeong Sik Lee, Jung Hun Jang
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Publication number: 20110095321Abstract: A light emitting device (LED) package includes a submount and a light emitting chip. The submount has a chip region and a supporting region over which the chip is mounted, and an encapsulating material and fluorescent material are formed over the chip. The coverage area of encapsulating and fluorescent materials is substantially coextensive with the chip or chip region, and a first area between an edge of the chip region and an edge of the supporting region is greater than a second area between the edge of the chip region and the chip.Type: ApplicationFiled: October 25, 2010Publication date: April 28, 2011Inventors: Yong Seon SONG, Jung Ha Hwang
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Publication number: 20100295089Abstract: Provided are a light emitting device package and a method for fabricating the same. The light emitting device package comprises a substrate; a light emitting device on the substrate; a zener diode comprising a first conductive type impurity region and two second conductive type impurity regions, the first conductive type impurity region being disposed in the substrate, the two second conductive type impurity regions being separately disposed in two areas of the first conductive type impurity region; and a first electrode layer and a second electrode layer, each of them being electrically connected to the second conductive type impurity regions and the light emitting device.Type: ApplicationFiled: November 3, 2008Publication date: November 25, 2010Applicant: LG INNOTEK CO., LTD.Inventors: Geun Ho Kim, Yong Seon Song, Yu Ho Won
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Publication number: 20100219432Abstract: Disclosed is a light emitting device. The light emitting device comprises a conductive substrate, an insulating layer on the conductive substrate, a plurality of light emitting device cells on the insulating layer, a connection layer electrically interconnecting the light emitting device cells, a first contact section electrically connecting the conductive substrate with at least one light emitting device cell, and a second contact section on the at least one light emitting device cell.Type: ApplicationFiled: October 13, 2008Publication date: September 2, 2010Inventors: Geun Ho Kim, Yong Seon Song, Yu Ho Won
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Publication number: 20100213497Abstract: Provided are a light emitting device package and a lighting system comprising the same. The light emitting device package comprises a package body having an inclined side surface and a light emitting device on the inclined side surface of the package body.Type: ApplicationFiled: February 19, 2010Publication date: August 26, 2010Inventor: Yong Seon SONG