Abstract: A display device includes: a pixel at a display region. The pixel includes: a light-emitting element connected between a first power source and a second power source; and a first transistor connected between the first power source and the light-emitting element, the first transistor to control a driving current of the light-emitting element in response to a voltage of a first node. The first transistor includes a first driving transistor and a second driving transistor that are connected in series with each other between the first power source and the light-emitting element, and the first driving transistor and the second driving transistor have structures that are asymmetric with each other in a cross-sectional view.

Abstract: A display device includes a first transistor including a first active layer, a first gate electrode overlapping the first active layer, a gate insulating layer between the first active layer and the first gate electrode, a first source electrode, and a first drain electrode; a second transistor including a second active layer, a second gate electrode overlapping the second active layer, a second source electrode and a second drain electrode; a capacitor including a first capacitor electrode connected to the second transistor; a lower electrode disposed under the first active layer; a connecting member connecting the first active layer to the lower electrode; and a first metal pattern contacting the connecting member and disposed on a same layer with the first gate electrode.

Abstract: A display device includes a pixel disposed in a display region. The pixel includes a light-emitting element connected between a first power source and a second power source; a first transistor connected between the first power source and the light-emitting element to control a driving current flowing in the light-emitting element in response to a voltage of a first node; and at least one switching transistor to transmit a data signal or a voltage of an initialization power source to the first node. The switching transistor includes a first channel region, a first conductive region and a second conductive region which are respectively disposed at opposite sides of the first channel region, and a first wide band-gap region disposed between the first channel region and the second conductive region.

Abstract: An ultrasonic sensing device includes: a sensing layer between a driving electrode and a sensing electrode, wherein the sensing layer is configured to generate an electrical signal according to an ultrasound; and a first transistor comprising a first gate electrode connected to a selection line and a second gate electrode connected to the sensing electrode.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract: A method for manufacturing a display device including forming a lower electrode on a substrate; depositing a first insulation layer thereon; forming a semiconductor layer that overlaps the lower electrode thereon; depositing a second insulation layer thereon; forming a gate electrode and an etching prevention layer that overlap the semiconductor layer thereon; depositing a third insulation layer thereon; forming a first conductor that overlaps the gate electrode thereon; depositing a fourth insulation layer thereon; forming a photosensitive film patterns thereon by depositing a photosensitive film and exposing and developing the photosensitive film such that portions of the photosensitive film are removed in a first area, a second area, and a third area; etching the third insulation layer using the patterns as an etching mask; etching the etching prevention layer by using the patterns as an etching mask; and etching the first insulation layer using the patterns as an etching mask.

Abstract: A display device including pixels is provided. Each of the pixels includes a first transistor having a gate electrode connected to a first node, a first electrode connected to a second node, and a second electrode connected to a third node, a second transistor having a gate electrode connected to a first scan line, a first electrode connected to a data line, and a second electrode connected to the second node, and a third transistor having a first gate electrode connected to the first scan line, a second gate electrode, a first electrode connected to the first node, and a second electrode connected to the third node. The second gate electrode may be in a floating state, and the third transistor may be aged to alleviate a leakage current in order to improve image generation.

Abstract: A pixel unit of a display device including: an OLED; a first transistor including a first electrode connected to a first node, a second electrode connected to a second node, and a third electrode connected to a third node; a capacitor including a first electrode receiving a power voltage and a second electrode connected to the first node; a second transistor including a first electrode receiving a scan signal, a second electrode receiving a data voltage and a third electrode connected to the second node; a third transistor including a first electrode receiving the scan signal, a second electrode connected to the first node and a third electrode connected to the third node, wherein at least one of the first and third transistors includes a fourth electrode, the fourth electrode receives a compensation voltage when an operation temperature is above a preset temperature and is floated when the operation temperature is equal to or more than the preset temperature.

Abstract: An organic light emitting diode display includes a first thin film transistor of which a channel is formed in a polycrystalline transistor, a second thin film transistor of which a channel is formed in an oxide semiconductor layer, an organic light emitting diode electrically connected to the first thin film transistor, a storage capacitor having a first electrode and a second electrode, wherein the second electrode of the storage capacitor is electrically connected to a gate electrode of the first thin film transistor, and an overlapping layer overlapping the oxide semiconductor layer in a plan view and receiving a positive voltage. The oxide semiconductor layer is positioned higher than the gate electrode of the first thin film transistor and the second electrode of the storage capacitor.

Abstract: A display device includes: a flexible substrate; a semiconductor layer on the flexible substrate; a passivation layer on the semiconductor layer; an alignment member layer on the passivation, the alignment member layer including a first alignment member and a second alignment member in a same layer; a first insulation layer on the alignment member layer and the passivation layer; a gate electrode on the first insulation layer; a second insulation layer on the first insulation layer and the gate electrode; and a source electrode and a drain electrode on the second insulation layer and spaced apart from each other, wherein the first alignment member and the second alignment member are spaced apart from each other with the gate electrode therebetween.

Abstract: The present invention relates to a device for testing an angle of view of a camera. The present invention may comprise: a first light source which is arranged to face an image sensor, and has a first width and a second width longer than the first width; and a second light source and a third light source which are disposed on both sides of the image sensor in the direction of the first width, respectively. The present invention can inhibit an interference of the light source or a bracket supporting the light source by reducing the number of light sources. In addition, since it is possible to measure the angle of view of a camera by reducing the light sources, the present invention can reduce the manufacturing costs of a device for testing an angle of view of a camera.

Abstract: A display device includes a substrate, a buffer layer on the substrate, a first semiconductor layer of a first transistor on the buffer layer, a first insulating layer disposed on the first semiconductor layer, a first gate electrode of the first transistor on the first insulating layer, a second insulating layer on the first gate electrode, and a second semiconductor layer of a second transistor disposed on the second insulating layer. A difference between a first distance between a lower side of the buffer layer and an upper side of the second insulating layer and a second distance between an upper side of the first semiconductor layer and an upper side of the second insulating layer is 420 to 520 angstroms.

Abstract: An organic light emitting diode display includes a substrate, an overlap layer on the substrate, a semiconductor layer on the overlap layer, a first gate conductor on the semiconductor layer, a second gate conductor on the first gate conductor, a data conductor on the second gate conductor, a driving transistor on the overlap layer, and an organic light emitting diode connected with the driving transistor. The driving transistor includes, in the semiconductor layer, a first electrode, a second electrode, with a channel therebetween. A gate electrode of the first gate conductor overlaps the channel. The overlap layer overlaps the channel of the driving transistor and at least a portion of the first electrode. A storage line of the second gate conductor receives a driving voltage through a driving voltage line in the data conductor. The overlap layer receives a constant voltage.

Abstract: An organic light emitting diode display according to an exemplary embodiment includes: a substrate; a first buffer layer on the substrate; a first semiconductor layer on the first buffer layer; a first gate insulating layer on the first semiconductor layer; a first gate electrode and a blocking layer on the first gate insulating layer; a second buffer layer on the first gate electrode; a second semiconductor layer on the second buffer layer; a second gate insulating layer on the second semiconductor layer; and a second gate electrode on the second gate insulating layer.

Abstract: An exemplary embodiment of the present disclosure provides a display device including: a substrate; a semiconductor layer disposed on the substrate; a first transistor including a first gate electrode disposed on the semiconductor layer; a light-emitting diode connected with the first transistor; and a first layer disposed between the substrate and the semiconductor layer, wherein the semiconductor layer includes a first electrode, a second electrode, and a channel disposed between the first electrode and the second electrode, the channel includes an impurity, and the first layer overlaps the first transistor.

Abstract: A pixel unit of a display device including: an OLED; a first transistor including a first electrode connected to a first node, a second electrode connected to a second node, and a third electrode connected to a third node; a capacitor including a first electrode receiving a power voltage and a second electrode connected to the first node; a second transistor including a first electrode receiving a scan signal, a second electrode receiving a data voltage and a third electrode connected to the second node; a third transistor including a first electrode receiving the scan signal, a second electrode connected to the first node and a third electrode connected to the third node, wherein at least one of the first and third transistors includes a fourth electrode, the fourth electrode receives a compensation voltage when an operation temperature is above a preset temperature and is floated when the operation temperature is equal to or more than the preset temperature.

Abstract: A display device including: a substrate; a light emitting element on the substrate; a pixel circuit between the substrate and the light emitting element, wherein the pixel circuit is electrically connected to the light emitting element, and includes a plurality of transistors; and a conductive pattern including an electrode portion and a wiring portion for supplying a voltage to the electrode portion, wherein the electrode portion overlaps an active pattern of at least one transistor among the plurality of transistors, wherein the conductive pattern is disposed between the substrate and the active pattern, and wherein a thickness of the wiring portion is greater than a thickness of the electrode portion.

Abstract: A method for manufacturing a display device including forming a lower electrode on a substrate; depositing a first insulation layer thereon; forming a semiconductor layer that overlaps the lower electrode thereon; depositing a second insulation layer thereon; forming a gate electrode and an etching prevention layer that overlap the semiconductor layer thereon; depositing a third insulation layer thereon; forming a first conductor that overlaps the gate electrode thereon; depositing a fourth insulation layer thereon; forming a photosensitive film patterns thereon by depositing a photosensitive film and exposing and developing the photosensitive film such that portions of the photosensitive film are removed in a first area, a second area, and a third area; etching the third insulation layer using the patterns as an etching mask; etching the etching prevention layer by using the patterns as an etching mask; and etching the first insulation layer using the patterns as an etching mask.

Abstract: A display device includes first semiconductor pattern including a first channel portion, a first electrode connected to a driving voltage line, and a second electrode connected to a light emitting element, a first insulating, a first conductive layer including a first gate electrode, a second insulating layer, a second conductive layer including an initialization power line, a third insulating layer, an upper semiconductor layer including a second semiconductor pattern including a second channel portion, a third electrode, and a fourth electrode connected to the first gate electrode, and a third semiconductor pattern including a third channel portion, a fifth electrode connected to the third electrode, and a sixth electrode connected to the second electrode, a fourth insulating layer, and a third conductive layer including a scan line and a control signal line, wherein the upper semiconductor layer does not overlap the first gate electrode and the initialization power line.

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.