Abstract: A method for depositing tungsten nitride thin films prior to a formation of tungsten thin films using the plasma-enhanced chemical vapor deposition, capable of restraining an occurrence of corrosions at a silicon substrate, an oxide film and boundary surfaces thereof, during the formation of tungsten thin films. The deposition of tungsten nitride thin film is carried out using a plasma-enhanced chemical vapor deposition at a deposition temperature of 300.degree. C. to 600.degree. C. and a deposition pressure of 0.1-1 Tort while maintaining a NH.sub.3 /WF.sub.6 partial pressure ratio at a range of 0.25 to 2. The obtained tungsten nitride thin film exhibits very low resistivity of 70 .mu..OMEGA.-cm to 300 .mu..OMEGA.-cm and effectively restrains an occurrence of corrosions at a silicon substrate, an oxide film and boundary surfaces thereof, during the formation of tungsten thin films using the plasma-enhanced chemical vapor deposition.

Abstract: The present invention relates to an apparatus for producing low resistivity tungsten thin films by a plasma enhanced chemical vapor deposition (PECVD) system. The structure of the invented system comprises the conventional PECVD reactor in which diffuser/electrode and hot plate heated by the hot wire and an apparatus to measure the exact surface temperature of monitoring silicon wafers. In order to control the tungsten deposition temperature exactly, two thermocouples encapsulated within the isolation tube extended to common ground outside the reactor to eliminate rf noise, are inserted into the small cavities made on two monitoring wafers, which ar placed in the surface of hot plate. Using the above mentioned system, the present invention is effective to measure and control the exact surface temperature of the silicon substrate; one of the major factors to produce low resistivity tungsten thin films.