Abstract: A vehicle wheel bearing includes a wheel hub having a hub flange to which a wheel is mounted; at least one inner ring mounted to one side of the wheel hub in a press-fitting manner; an outer ring provided radially outward of the inner ring and having a mounting flange to be mounted to the vehicle body on an outer circumferential surface; one or more rolling elements provided radially inward of the outer ring; and a sealing member configured to prevent foreign matters from flowing into the wheel bearing. The sealing member includes a first sealing member mounted to the wheel hub or the inner ring; and a second sealing member mounted to the outer ring. One or more elastic sealing lips are provided in one or both of the first sealing member and the second sealing member.

Abstract: A sealing device comprises a first insert body and a second insert body. The first insert body has an annular first frame, and a first sealing part coupled to the first frame. The second insert body has an annular second frame having a diameter smaller than that of the first frame, and a second sealing part coupled to the second frame. The second insert body rotates relative to the first insert body. The first insert body and the second insert body are arranged such that a gap is formed between the first sealing part and the second sealing part. The second sealing part has a first surface facing the first sealing part and spaced apart from the second frame in a first axial direction; and a first baffle protruding toward the first sealing part from the end of the first surface in the outer radial direction thereof.

Abstract: A sealing device comprises a first insert body and a second insert body. The first insert body has an annular first frame, and a first sealing part coupled to the first frame. The second insert body has an annular second frame having a diameter smaller than that of the first frame, and a second sealing part coupled to the second frame. The second insert body rotates relative to the first insert body. The first insert body and the second insert body are arranged such that a gap is formed between the first sealing part and the second sealing part. The second sealing part has a first surface facing the first sealing part and spaced apart from the second frame in a first axial direction; and a first baffle protruding toward the first sealing part from the end of the first surface in the outer radial direction thereof.

Abstract: The present invention relates to an apparatus and a method for determining a stroke during sleep capable of determining whether or not a stroke occurs during sleep of a user (a patient). Accuracy of determination for whether or not the stroke occurs is improved by applying a sleeping position (SP) filter (a processing process of deleting a measurement result when a user is not lying with his/her breast facing upward) and then comparing a ratio between left and right motions to determine whether or not the stroke occurs.

Abstract: Disclosed herein is an animal training device and method of controlling the same. The animal training device includes a transmitter and at least one receiver. The transmitter transmits RF signals according to manipulation of function switches, and has emergency stimulation mode in which an RF control signal is transmitted by adding a predetermined level to a low-frequency stimulation level set for each individual animal, simultaneous stimulation mode in which an RF control signal is transmitted by adding a predetermined level to low-frequency stimulation levels set for animals, and constant stimulation alternation mode in which an RF control signal is transmitted by automatically varying a period of a low-frequency stimulation.

Abstract: Disclosed herein is an apparatus for preventing an animal and method of controlling the apparatus. The apparatus includes a sound sensor for sensing a bark of an animal and converting the bark into an electrical signal. An amplifier amplifies the electrical signal. A vibration sensor senses a vibration occurring on a neck of the animal. A microprocessor performs control such that, when signals are input from the sound sensor and the vibration sensor, voice, ultrasonic or low-frequency stimulation means is output, and has an auto-variable output function and a time band-based output function. A first control switch allows the user to optionally set a type and a stimulation intensity of the stimulation means. A second control switch allows the user to optionally set a time for which the stimulation means is operated. An output unit receives control signals for the stimulation means and outputs corresponding stimulations.

Abstract: A cellulose ester film for protecting a polarizing plate of a Liquid Crystal Display device, and a method for producing the same are disclosed. The cellulose ester film comprises a benzotriazole-based UV absorbent of Formula 1 and a triazine-based UV absorbent of Formula 2, wherein, in Formula 1, R1, R2, R3, R4, R5, R6, R7 and R8 represent independently hydrogen atom, halogen atom, hydroxy group, alkyl group, alkenyl group, alkoxy group, alkylthio group, aryl group, aryloxy group or arylthio group, wherein, in Formula 2, R R1, R2 and R3 represent independently alkyl group, alkenyl group, alkoxy group, alkylthio group, aryl group, aryloxy group or arylthio group.

Abstract: A cellulose film for protecting a polarizing plate of a Liquid Crystal Display Device, and a method for producing the same are disclosed. The cellulose film comprises a front layer which includes a non-phosphoric acid ester type plasticizer; an inner layer which includes a plasticizer and a UV absorbent, and a rear layer which includes a non-phosphoric acid ester type plasticizer and fine particles. Preferably, the front layer further includes fine particles, and the plasticizer in the inner layer includes at least two kinds of plasticizers, and at least one of plasticizer in the inner layer is phosphoric acid ester type plasticizer.

Abstract: A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.

Abstract: Provided are a hetero-junction bipolar transistor (HBT) that can increase data processing speed and a method of manufacturing the hetero-junction bipolar transistor.

Abstract: Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.

Abstract: A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.

Abstract: A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.

Abstract: A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolated the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.

Abstract: Provided is a broadband microstrip-waveguide transition apparatus operating in a millimeter waveband. The millimeter-wave band broadband microstrip-waveguide transition apparatus includes a slot for transferring an electromagnetic signal propagating along a microstrip line, a main patch positioned between the slot and a waveguide and resonating from the signal transferred from the slot, and a parasitic patch positioned between the main patch and the waveguide and resonating together with the main patch. According to the millimeter-wave band broadband microstrip-waveguide transition apparatus, it is possible to transfer a signal from the microstrip line to the waveguide, and to increase a resonance bandwidth to a broadband level.

Abstract: Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.

Abstract: A heat-shrinkable polyester film comprising styrene acrylic polymer in an amount ranging from 0.05 to 5% by weight based on the total weight of the film together with 2,2-dimethyl(?1,3-propane)diol-copolymerized polyester and polytrimethylene terephthalate exhibits superior properties suitable for labeling or shrink-wrapping containers.

Abstract: Provided is a broadband microstrip-waveguide transition apparatus operating in a millimeter waveband. The millimeter-wave band broadband microstrip-waveguide transition apparatus includes a slot for transferring an electromagnetic signal propagating along a microstrip line, a main patch positioned between the slot and a waveguide and resonating from the signal transferred from the slot, and a parasitic patch positioned between the main patch and the waveguide and resonating together with the main patch. According to the millimeter-wave band broadband microstrip-waveguide transition apparatus, it is possible to transfer a signal from the microstrip line to the waveguide, and to increase a resonance bandwidth to a broadband level.

Abstract: The biaxially oriented, white polyester film of the present invention having improved flame-retardancy, covering ability, flexibility and heat-resistance comprises a polyester resin having an intrinsic viscosity of 0.4 to 0.9 dl/g, a flame-retardant which is alkylene bistetrabromophthalimide or decabromodiphenylalkane, and a fluorescent whitening agent, said polyester film being biaxially drawn at a total draw ratio of 9 or more.

Abstract: Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.