Abstract: A method for controlling an electronic device with a remote control includes detecting a motion of the remote control and determining a command associated with the detected motion. The determined command is sent from the remote control to the electronic device. A corresponding remote control includes a motion detector for detecting a motion of the remote control, a device for determining a command associated with the detected motion, and a transmitter for sending the determined command to the electronic device.

Abstract: A static read-only memory (SRAM) includes one or more bit cell rows that each includes a collection of bit cells. Each bit cell row is coupled to two or more different wordlines, where each wordline associated with a given bit cell row provides memory access to a different subset of bit cells within that bit cell row.

Abstract: A static random-access memory (SRAM) module includes a column select (RSEL) driver coupled to an input/output (I/O) circuit by an RSEL line. The I/O circuit is configured to read bit line signals from a bit cell within the SRAM module. During a read operation, the RSEL driver pulls the RSEL line to zero in order to cause p-type metal-oxide-semiconductors (PMOSs) within the I/O circuit to sample the bit line signals output by the bit cell. In response, an aggressor driver drives the RSEL line to a negative voltage, thereby reducing the resistance of the PMOSs within the I/O circuit.

Abstract: The invention discloses a semiconductor memory device and a method for word line decoding and routing. The present invention relates generally to semiconductor memory field, Problems solved by the invention is that, to improve the quality of word line signals results in routing congestion. Embodiments of the invention provide the program as follows: a semiconductor memory device and a method for word line decoding and routing, dividing memory array of the semiconductor memory device into a plurality of smaller memory arrays, on a first metal layer routing first decoded row address, on a second metal layer below the first metal layer routing second decoded row address, and the output word line after decoding drives the plurality of smaller memory arrays. Embodiments of the invention are suitable for various semiconductor memory designs, including: on-chip cache, translation look-aside buffer, content addressable memory, ROM, EEPROM, and SRAM and so on.

Abstract: A static random-access memory (SRAM) module includes a column select (RSEL) driver coupled to an input/output (I/O) circuit by an RSEL line. The I/O circuit is configured to read bit line signals from a bit cell within the SRAM module. During a read operation, the RSEL driver pulls the RSEL line to zero in order to cause p-type metal-oxide-semiconductors (PMOSs) within the I/O circuit to sample the bit line signals output by the bit cell. In response, an aggressor driver drives the RSEL line to a negative voltage, thereby reducing the resistance of the PMOSs within the I/O circuit.

Abstract: A static read-only memory (SRAM) includes one or more bit cell rows that each includes a collection of bit cells. Each bit cell row is coupled to two or more different wordlines, where each wordline associated with a given bit cell row provides memory access to a different subset of bit cells within that bit cell row.

Abstract: The invention discloses a semiconductor memory device and a method for word line decoding and routing. The present invention relates generally to semiconductor memory field, Problems solved by the invention is that, to improve the quality of word line signals results in routing congestion. Embodiments of the invention provide the program as follows: a semiconductor memory device and a method for word line decoding and routing, dividing memory array of the semiconductor memory device into a plurality of smaller memory arrays, on a first metal layer routing first decoded row address, on a second metal layer below the first metal layer routing second decoded row address, and the output word line after decoding drives the plurality of smaller memory allays, Embodiments of the invention are suitable for various semiconductor memory designs, including: on-chip cache, translation look-aside buffer, content addressable memory, ROM, EEPROM, and SRAM and so on.

Abstract: A hydrogen absorbing alloy is disclosed for use as the negative electrode in alkaline batteries. The general formula of the alloy is AB.sub.x M.sub.y, wherein A is selected from the rare earth element La or a mischmetal thereof; B is selected from the group consisting of Ni, Fe, Mn, Cr, Cu, Co, and mixtures thereof; M is selected from the group consisting of Al, In, Zn, Sn, Ga, Si, Ge, Bi, and mixtures thereof; 4.5.ltoreq.x.ltoreq.5.5; and 0.3<y.ltoreq.0.6. This alloy has a longer cycle life, along with larger capacity and better reactivity.