Abstract: A manufacturing method for an air bridge structure includes forming a first photoresist structure on a substrate. The first photoresist structure includes a first opening that reveals the substrate. The manufacturing method further includes forming a bridge supporting structure on the substrate by depositing an inorganic bridge supporting material on the substrate based on the first opening in the first photoresist structure, and stripping the first photoresist structure after the deposition. Then, the manufacturing method includes forming a second photoresist structure on the substrate. The second photoresist structure includes at least a second opening that reveals at least a portion of the bridge supporting structure on the substrate. Then, the method include forming the air bridge structure by depositing an air bridge material on the substrate based on the second opening and stripping the second photoresist structure after the deposition. Further, the bridge supporting structure can be removed.

Abstract: A terahertz modulator based on low-dimension electron plasma wave, a manufacturing method thereof, and a high speed modulation method are provided. The terahertz modulator includes a plasmon and a cavity. The present disclosure discloses the resonance absorption mechanism caused by collective oscillation of electrons (plasma wave, namely, the plasmon). In order to enhance the coupling strength between the terahertz wave and the plasmon, a GaN/AlGaN high electron mobility transistor structure having a grating gate is integrated in a terahertz Fabry-Pérot cavity, and a plasmon polariton is formed arising from strong coupling of the plasmon and a cavity mode.

Abstract: A terahertz modulator based on low-dimension electron plasma wave, a manufacturing method thereof, and a high speed modulation method are provided. The terahertz modulator includes a plasmon and a cavity. The present disclosure discloses the resonance absorption mechanism caused by collective oscillation of electrons (plasma wave, namely, the plasmon). In order to enhance the coupling strength between the terahertz wave and the plasmon, a GaN/AlGaN high electron mobility transistor structure having a grating gate is integrated in a terahertz Fabry-Pérot cavity, and a plasmon polariton is formed arising from strong coupling of the plasmon and a cavity mode.

Abstract: The present invention provides a terahertz source chip, a source device, a source assembly and manufacturing methods thereof. The source chip comprises: a two-dimensional electron gas mesa; an electrode formed on the two-dimensional electron gas mesa for exciting a plasma wave; a terahertz resonant cavity formed below the two-dimensional electron gas mesa, the terahertz resonant cavity having a total reflector on a bottom surface thereof; and a grating formed on the two-dimensional electron gas mesa for coupling a plasma wave pattern with a cavity mode of the terahertz resonant cavity to generate terahertz radiation. In the present invention, a plasmon polariton is formed by strongly coupling the cavity mode of the terahertz resonant cavity with the plasma wave mode in the two-dimensional electron gas below the grating, and the terahertz wave emission is realized by electrical excitation of the plasmon polariton.