Abstract: Triphenylene containing benzo-fused thiophene compounds are provided. Additionally, triphenylene containing benzo-fused furan compounds are provided. The compounds may be useful in organic light emitting devices, particularly as hosts in the emissive layer of such devices, or as materials for enhancement layers in such devices, or both.

Abstract: Novel organometallic compounds are provided, which include a 2-phenylpyridine iridium (Irppy) complex having alkyl and/or aryl substituted ligands and a heteroleptic or a homoleptic nature. These materials may be advantageously used in OLEDs to tune evaporation temperature and solubility, narrow emission, and increase device efficiency.

Abstract: Novel materials are provided, having a single phenyl or a chain of phenyls where there is a nitrogen atom on each end of the single phenyl or chain of phenyls. The nitrogen atom may be further substituted with particular thiophene, benzothiophene, and triphenylene groups. Organic light-emitting devices are also provided, where the novel materials are used as a hole transport material in the device. Combinations of the hole transport material with specific host materials are also provided.

Abstract: A non-volatile memory device includes an array of non-volatile memory cells. When programming the memory cells, a voltage supply source is used that includes multiple independent charge pumps. The independent charge pumps supply the programming voltage to different ones of bit lines in the array of memory cells. Using multiple charge pumps tends to reduce output voltage fluctuations and thereby reduce power loss.

Abstract: Triphenylene containing benzo-fused thiophene compounds are provided. Additionally, triphenylene containing benzo-fused furan compounds are provided. The compounds may be useful in organic light emitting devices, particularly as hosts in the emissive layer of such devices, or as materials for enhancement layers in such devices, or both.

Abstract: Organometallic compounds comprising an imidazole carbene ligand having a N-containing ring fused to the imidazole ring are provided. In particular, the N-containing ring fused to the imidazole ring may contain one nitrogen atom or more than one nitrogen atom. These compounds may demonstrate high photoluminescent (PL) efficiency, Gaussian emission spectra, and/or short excited state lifetimes. These materials may be especially useful as blue phosphorescent emitters.

Abstract: A biotrickling filter for treating waste gas including a waste gas inlet, packing layers, a spray pipe, a spray liquid storage tank, and a waste gas outlet. The waste gas passes through a first packing layer after passing through the waste gas inlet and then passes through a second packing layer after changing the flow direction at the bottom of the first packing layer; the flow directions of the waste gas in the first packing layer and the second packing layer are opposite to form a cross-flow structure; the two different flow directions of the waste gas form a cross-flow unit, and two or more cross-flow units form the biotrickling filter.

Abstract: Novel organic compounds comprising a bicarbazole core are provided. In particular, the compound has a 3;3?-bicarbazole core substituted at the 9th position with at least one of dibenzofuran, dibenzothiophene, dibenzoselenophene, azadibenzofuran, azadibenzothiophene and azadibenzoselenophene. The compounds may be used in organic light emitting devices to provide devices having improved efficiency and improved lifetime.

Abstract: Compounds comprising a triphenylene moiety and a benzo- or dibenzo-moiety are provided. In particular, the benzo- or dibenzo-moiety has a fused substituent. These compounds may be used in organic light emitting devices, particularly in combination with yellow, orange and red emitters, to provide devices with improved properties.

Abstract: Novel organic compounds comprising a bicarbazole core are provided. In particular, the compound has a 3;3?-bicarbazole core substituted at the 9th position with at least one of dibenzofuran, dibenzothiophene, dibenzoselenophene, azadibenzofuran, azadibenzothiophene and azadibenzoselenophene. The compounds may be used in organic light emitting devices to provide devices having improved efficiency and improved lifetime.

Abstract: Novel materials are provided, having a single phenyl or a chain of phenyls where there is a nitrogen atom on each end of the single phenyl or chain of phenyls. The nitrogen atom may be further substituted with particular thiophene, benzothiophene, and triphenylene groups. Organic light-emitting devices are also provided, where the novel materials are used as a hole transport material in the device. Combinations of the hole transport material with specific host materials are also provided.

Abstract: A non-volatile memory device includes an array of non-volatile memory cells. When programming the memory cells, a voltage supply source is used that includes multiple independent charge pumps. The independent charge pumps supply the programming voltage to different ones of bit lines in the array of memory cells. Using multiple charge pumps tends to reduce output voltage fluctuations and thereby reduce power loss.

Abstract: Commonly, read times of a memory line are slowed due to voltage overshoot and/or voltage undershoot. To eliminate these problems, a control component can manage voltage while a leakage component manages timing of voltage. This allows for a line pre-charge that produces increase read times. The control component can implement as a variable resistor that modifies value to compensate for temperature. The leakage component can include a capacitor configuration that allows voltage to pass.

Abstract: Triphenylene containing benzo-fused thiophene compounds are provided. Additionally, triphenylene containing benzo-fused furan compounds are provided. The compounds may be useful in organic light emitting devices, particularly as hosts in the emissive layer of such devices, or as materials for enhancement layers in such devices, or both.

Abstract: A method of forming a capacitor for use as a charge pump with flash memory, comprising: (a) concurrently forming polysilicon gates on a semiconductor body in a core region and a polysilicon middle capacitor plate in a peripheral region, (b) forming a first dielectric layer over the polysilicon gates and the middle capacitor plate, (c) planarizing the first dielectric layer to expose a top portion of the polysilicon gates and a top portion of the middle capacitor plate, (d) forming a second dielectric layer over the top portion of the middle capacitor layer, (e) concurrently forming patterning a second polysilicon layer in the core region and a third capacitor plate in the periphery region and (f) connecting the third capacitor plate to the source/drain well.

Abstract: One embodiment of the invention relates to a method for accessing a memory cell. In this method, at least one bit of the memory cell is erased. After erasing the at least one bit, a soft program operation is performed to bias the memory cell thereby improving the reliability of data stored in the memory cell. Other methods and systems are also disclosed.

Abstract: A fast reference circuit having active feedback includes a bias supply circuit and a variable divider circuit connected by an active feedback path to the bias supply circuit, and a comparator circuit connected to the variable divider circuit, the bias supply circuit, and a reference node of the variable divider circuit. In one embodiment, a start-up circuit initially discharges a potential at the bias supply and comparator circuits, then initializes a reference voltage at the reference node at about zero volts to improve repeatability. In one embodiment, the variable voltage divider comprises an impendence that is trimmed based on a sheet resistance of a process used to fabricate the fast reference circuit, and further comprises a variable reference current circuit coupled to the impedance and configured to generate a current having a value based on a desired reference voltage and to conduct the current through the impedance, thereby generating the reference voltage associated therewith.

Abstract: A semiconductor memory device (104) selectably connectable to an external high voltage power supply (122) is provided. The semiconductor memory device (104) includes a switch (314), a detector (316) and a timing device (318). The switch (314) is connected to external voltage supply signals and selectably couples the external voltage supply signals to memory cells (305) of the semiconductor memory device (104) for memory operations thereof. The external voltage supply signals including a high voltage signal (412) provided from the external high voltage power supply (122) and an operational voltage signal Vcc (402). The detector (316) is connected to the external voltage supply signals for generating a timer activation signal (404) in response to detecting an operational voltage power-on period.

Abstract: A method and apparatus are provided for high performance, high voltage memory operations on selected memory cells (200) of a semiconductor memory device (100). A high voltage generator (106) during program or erase operations provides a continuous high voltage level (702) on selected word lines (502) and maintains a continuous high voltage level supply to a bit line decoder (120) which sequentially provides the high voltage level (706) to a first portion of bit lines (504) and discharges (708) those bit lines (504) before providing the high voltage level to a second portion (710).

Abstract: Commonly, read times of a memory line are slowed due to voltage overshoot and/or voltage undershoot. To eliminate these problems, a control component can manage voltage while a leakage component manages timing of voltage. This allows for a line pre-charge that produces increase read times. The control component can implement as a variable resistor that modifies value to compensate for temperature. The leakage component can include a capacitor configuration that allows voltage to pass.