Abstract: The present disclosure provides a method for cleaning a bonding interface before bonding. The method includes: providing a first surface and a second surface for bonding, the first surface being a non-crystal surface and the second surface being a crystal surface; and cleaning the first surface and the second surface with ammonia respectively before bonding, wherein at least one of parameters of an ammonia concentration and a cleaning temperature for cleaning the first surface is higher than a counterpart of parameters for cleaning the second surface.

Abstract: The present disclosure provides an annealing method for improving interface bonding strength of a wafer. The method includes: providing a substrate, the substrate having a bonding interface; performing a first annealing step, wherein the first annealing step is practiced in an oxygen-containing atmosphere, and an oxidation protection layer is formed on a surface of the substrate through the annealing step; and performing a second annealing step upon the first annealing step, wherein a temperature of the second annealing step is higher than that of the first annealing step, and the second annealing step is practiced in a nitrogen-free environment.

Abstract: A method for preparing a substrate with an insulating buried layer includes: providing a substrate, the substrate having a supporting layer and an insulating layer arranged on a surface of the supporting layer; performing first ion implantation, implanting modified ions into the substrate, wherein a distance from an interface between the insulating layer and the supporting layer to a Gaussian distribution peak of modified ion concentration is less than 50 nm, such that the modified ions form a nano cluster in the insulating layer; and performing a second ion implantation, continuing to implant the modified ions into the insulating layer, wherein the ions are implanted in the same way as the first ion implantation, and a distance from a Gaussian distribution peak of modified ion concentration in this step to the Gaussian distribution peak of modified ion concentration in the first ion implantation is less than 80 nm.

Abstract: The present disclosure provides a method for preparing a substrate with a carrier trapping center. The method includes: implanting bubbling ions into the semiconductor substrate to form a splitting layer, and implanting modified ions into the insulating layer to form a nano cluster; providing a supporting substrate; bonding the supporting substrate to the semiconductor substrate by using the insulating layer as an intermediate layer; performing a first heat treatment for the bonded substrate such that a splitting layer is formed at the position where the bubbling ions are implanted, and causing the semiconductor substrate to split at the position of the splitting layer; performing rapid thermal annealing for the substrate; and performing a second heat treatment for the rapidly thermally annealed semiconductor substrate to consolidate the bonding interface and form the nano cluster at the position where the modified ions are implanted.

Abstract: The present disclosure provides an annealing method for improving interface bonding strength of a wafer. The method includes: providing a substrate, the substrate having a bonding interface; performing a first annealing step, wherein the first annealing step is practiced in an oxygen-containing atmosphere, and an oxidation protection layer is formed on a surface of the substrate through the annealing step; and performing a second annealing step upon the first annealing step, wherein a temperature of the second annealing step is higher than that of the first annealing step, and the second annealing step is practiced in a nitrogen-free environment.

Abstract: A method for preparing a substrate with an insulating buried layer includes: providing a substrate, the substrate having a supporting layer and an insulating layer arranged on a surface of the supporting layer; performing first ion implantation, implanting modified ions into the substrate, wherein a distance from an interface between the insulating layer and the supporting layer to a Gaussian distribution peak of modified ion concentration is less than 50 nm, such that the modified ions form a nano cluster in the insulating layer; and performing a second ion implantation, continuing to implant the modified ions into the insulating layer, wherein the ions are implanted in the same way as the first ion implantation, and a distance from a Gaussian distribution peak of modified ion concentration in this step to the Gaussian distribution peak of modified ion concentration in the first ion implantation is less than 80 nm.

Abstract: The present disclosure provides a method for preparing a substrate with a carrier trapping center. The method includes: implanting bubbling ions into the semiconductor substrate to form a splitting layer, and implanting modified ions into the insulating layer to form a nano cluster; providing a supporting substrate; bonding the supporting substrate to the semiconductor substrate by using the insulating layer as an intermediate layer; performing a first heat treatment for the bonded substrate such that a splitting layer is formed at the position where the bubbling ions are implanted, and causing the semiconductor substrate to split at the position of the splitting layer; performing rapid thermal annealing for the substrate; and performing a second heat treatment for the rapidly thermally annealed semiconductor substrate to consolidate the bonding interface and form the nano cluster at the position where the modified ions are implanted.

Abstract: The present disclosure provides a method for cleaning a bonding interface before bonding. The method includes: providing a first surface and a second surface for bonding, the first surface being a non-crystal surface and the second surface being a crystal surface; and cleaning the first surface and the second surface with ammonia respectively before bonding, wherein at least one of parameters of an ammonia concentration and a cleaning temperature for cleaning the first surface is higher than a counterpart of parameters for cleaning the second surface.