Abstract: Disclosed is a thin-film transistor including a substrate including a gate electrode formed thereon, a gate insulating film disposed on an entire face of the substrate, a semiconductor layer disposed on an entire face of the gate insulating film, and source and drain electrodes disposed on the semiconductor layer so as to be spaced apart from each other, wherein the semiconductor layer includes cesium tin triiodide (CsSnI3) or methylammonium tin triiodide (MASnI3), wherein the semiconductor layer further contains an additive.

Abstract: A method for preparing a nanosheet dispersion solution includes a step of adding a two-dimensional material having a layered structure to a solvent containing at least two materials to weaken an interlayer bonding force, and a step in which a nanosheet, which is exfoliated as the material is attached to a surface thereof by a covalent bond during the exfoliation process, has a repulsive force so as not to agglomerate. The nanosheet dispersion solution prepared by the preparing method of the inventive concept may be obtained by increasing the surface area of the two-dimensional sheet from the two-dimensional material, may solve the problem of the yield, may reduce a barrier in the charge transfer by reducing the interlayer distance, and may maintain the dispersed phase of the ink prepared by the repulsive force of the nanosheet.

Abstract: A thin film transistor includes a gate electrode, an insulating layer disposed on the gate electrode, and an active layer disposed on the insulating layer, where the active layer includes a perovskite compound represented by the following Formula: AB(1-u)C(u)[X(1-v)Y(v)]3, where A is a monovalent organic cation, a monovalent inorganic cation, or any combination thereof, B is Sn2+, C is a divalent cation or trivalent cation, X is a monovalent anion, Y is a monovalent anion different from X, u is a real number greater than 0 and less than 1, and v is a real number greater than 0 and less than 1.

Abstract: The present specification relates to an organic transistor including: a source electrode; a drain electrode; a gate electrode; an insulating layer; and an organic semiconductor layer having one or more layers, in which one or more layers of the organic semiconductor layer include a compound represented by Formula 1.

Abstract: The present specification relates to an organic transistor including an organic semiconductor layer including a compound, and a gas sensor to which the organic transistor is applied.

Abstract: The present specification relates to an organic transistor including: a source electrode; a drain electrode; a gate electrode; an insulating layer; and an organic semiconductor layer having one or more layers, in which one or more layers of the organic semiconductor layer include a compound represented by Formula 1.

Abstract: The present specification relates to an organic transistor including an organic semiconductor layer including a compound, and a gas sensor to which the organic transistor is applied.

Abstract: The present invention relates to a method for manufacturing a transistor according selective printing of a dopant. For the manufacture of a transistor, a semiconductor layer is formed on a substrate, and a dopant layer is formed on the semiconductor layer. In the formation of the dopant layer, an inkjet printing is used to selectively print an n type dopant or a p type dopant.

Abstract: The present invention relates to a method for manufacturing a transistor according selective printing of a dopant. For the manufacture of a transistor, a semiconductor layer is formed on a substrate, and a dopant layer is formed on the semiconductor layer. In the formation of the dopant layer, an inkjet printing is used to selectively print an n type dopant or a p type dopant.

Abstract: The present invention relates to a carbon nanotube organic semiconductor, a manufacturing method thereof, and a thin film transistor for chemical sensor using the same. More specifically, the present invention provides a carbon nanotube organic semiconductor, a manufacturing method thereof, and a thin film transistor for chemical sensor using the same, where the carbon nanotube organic semiconductor is an organic semiconductor layer constituting an organic thin film transistor and comprising a conjugated polymer and a single-walled carbon nanotube, the single-walled carbon nanotube displaying semiconducting properties and being wrapped with the conjugated polymer.

Abstract: The present invention relates to a carbon nanotube interlayer, a manufacturing method thereof, and a thin film transistor using the same. More specifically, the present invention provides a carbon nanotube interlayer, a manufacturing method thereof, and a thin film transistor using the same, where the carbon nanotube interlayer is a layer constituting an organic thin film transistor and comprising a conjugated polymer and a single-walled carbon nanotube between an organic semiconductor layer and a source/drain electrode. The conjugated polymer selectively wraps the single-walled carbon nanotube having semiconducting properties.

Abstract: Disclosed herein is a method of manufacturing an organic thin film transistor, including the steps of: forming a first insulation layer on a semiconductor layer; locally etching the first insulation layer; and forming a second insulation layer on the first insulation layer including the etched region thereof, wherein the etching of the first insulation layer is conducted by inkjet printing.

Abstract: Provided are a multi-layer interconnection structure and a manufacturing method thereof. The multi-layer interconnection structure includes a substrate; a first wiring on the substrate; an interlayer insulation layer on the first wiring; a second wiring on the interlayer insulation layer; and a via contact including at least one conductive filament penetrating through the interlayer insulation layer between the second wiring and the first wiring to be electrically connected to the first wiring and the second wiring.

Abstract: An electronic device comprising an optically transparent substrate, a first electrode structure incorporating a channel, said channel being optically transparent and said electrode structure being optically opaque, at least one intermediate layer, and a photosensitive dielectric layer disposed above the at least one intermediate layer, the photosensitive dielectric layer incorporating a trench in a region essentially over said channel, the electronic device further comprising a further electrode, wherein the further electrode is located partially in the trench and partially beyond the trench such that portions of the further electrode that extend beyond the trench are separated from the at least one intermediate layer by the photosensitive dielectric layer.

Abstract: An organic insulating layer composition includes a polymer mixture including 50 parts to 90 parts by volume of an organic polymer and 10 parts to 50 parts by volume of an amorphous polymer, wherein the organic polymer includes at least a first repeating unit and a second repeating unit, the first and second repeating units each being substituted with at least one of fluorine or chlorine, a total number of fluorine and chlorine atoms in the first repeating unit being different from a total number of fluorine and chlorine atoms in the second repeating unit, and an organic solvent.

Abstract: An electronic device comprising an optically transparent substrate, a first electrode structure incorporating a channel, said channel being optically transparent and said electrode structure being optically opaque, at least one intermediate layer, and a photosensitive dielectric layer disposed above the at least one intermediate layer, the photosensitive dielectric layer incorporating a trench in a region essentially over said channel, the electronic device further comprising a further electrode, wherein the further electrode is located partially in the trench and partially beyond the trench such that portions of the further electrode that extend beyond the trench are separated from the at least one intermediate layer by the photosensitive dielectric layer.

Abstract: An organic insulating layer composition includes a polymer mixture including 50 parts to 90 parts by volume of an organic polymer and 10 parts to 50 parts by volume of an amorphous polymer, wherein the organic polymer includes at least a first repeating unit and a second repeating unit, the first and second repeating units each being substituted with at least one of fluorine or chlorine, a total number of fluorine and chlorine atoms in the first repeating unit being different from a total number of fluorine and chlorine atoms in the second repeating unit, and an organic solvent.

Abstract: Provided are a multi-layer interconnection structure and a manufacturing method thereof. The multi-layer interconnection structure includes a substrate; a first wiring on the substrate; an interlayer insulation layer on the first wiring; a second wiring on the interlayer insulation layer; and a via contact including at least one conductive filament penetrating through the interlayer insulation layer between the second wiring and the first wiring to be electrically connected to the first wiring and the second wiring.

Abstract: Provided are a multi-layer interconnection structure and a manufacturing method thereof. The multi-layer interconnection structure includes a substrate; a first wiring on the substrate; an interlayer insulation layer on the first wiring; a second wiring on the interlayer insulation layer; and a via contact including at least one conductive filament penetrating through the interlayer insulation layer between the second wiring and the first wiring to be electrically connected to the first wiring and the second wiring.

Abstract: An electronic device comprising an optically transparent substrate, a first electrode structure incorporating a channel, said channel being optically transparent and said electrode structure being optically opaque, at least one intermediate layer, and a photosensitive dielectric layer disposed above the at least one intermediate layer, the photosensitive dielectric layer incorporating a trench in a region essentially over said channel, the electronic device further comprising a further electrode, wherein the further electrode is located partially in the trench and partially beyond the trench such that portions of the further electrode that extend beyond the trench are separated from the at least one intermediate layer by the photosensitive dielectric layer.