Patents by Inventor Yoon Taek Han

Yoon Taek Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Critical dimension measurement system and method of measuring critical dimensions using same
    Patent number: 11397380
    Abstract: A critical dimension measurement system includes a voltage measurement circuit, a control circuit, and a critical dimension measurement circuit. The voltage measurement circuit may measure potentials of mask patterns of a photomask. The control circuit may include an information storage circuit for storing distribution information on the potentials of the mask patterns, measured by the voltage measurement circuit, and information on layout patterns corresponding to the mask patterns of the photomask. The critical dimension measurement circuit may be operated, by the control circuit, in a first measurement mode and a second measurement mode running for a shorter time than the first measurement mode, and measure critical dimensions of the mask patterns.
    Type: Grant
    Filed: November 6, 2020
    Date of Patent: July 26, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Won Joo Park, Hyung Joo Lee, Seuk Hwan Choi, Dong Seok Nam, Yoon Taek Han
  • CRITICAL DIMENSION MEASUREMENT SYSTEM AND METHOD OF MEASURING CRITICAL DIMENSIONS USING SAME
    Publication number: 20210055648
    Abstract: A critical dimension measurement system includes a voltage measurement circuit, a control circuit, and a critical dimension measurement circuit. The voltage measurement circuit may measure potentials of mask patterns of a photomask. The control circuit may include an information storage circuit for storing distribution information on the potentials of the mask patterns, measured by the voltage measurement circuit, and information on layout patterns corresponding to the mask patterns of the photomask. The critical dimension measurement circuit may be operated, by the control circuit, in a first measurement mode and a second measurement mode running for a shorter time than the first measurement mode, and measure critical dimensions of the mask patterns.
    Type: Application
    Filed: November 6, 2020
    Publication date: February 25, 2021
    Inventors: WON JOO PARK, HYUNG JOO LEE, SEUK HWAN CHOI, DONG SEOK NAM, YOON TAEK HAN
  • Critical dimension measurement system and method of measuring critical dimensions using same
    Patent number: 10831095
    Abstract: A critical dimension measurement system includes a voltage measurement circuit, a control circuit, and a critical dimension measurement circuit. The voltage measurement circuit may measure potentials of mask patterns of a photomask. The control circuit may include an information storage circuit for storing distribution information on the potentials of the mask patterns, measured by the voltage measurement circuit, and information on layout patterns corresponding to the mask patterns of the photomask. The critical dimension measurement circuit may be operated, by the control circuit, in a first measurement mode and a second measurement mode running for a shorter time than the first measurement mode, and measure critical dimensions of the mask patterns.
    Type: Grant
    Filed: May 8, 2018
    Date of Patent: November 10, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Won Joo Park, Hyung Joo Lee, Seuk Hwan Choi, Dong Seok Nam, Yoon Taek Han
  • CRITICAL DIMENSION MEASUREMENT SYSTEM AND METHOD OF MEASURING CRITICAL DIMENSIONS USING SAME
    Publication number: 20190094684
    Abstract: A critical dimension measurement system includes a voltage measurement circuit, a control circuit, and a critical dimension measurement circuit. The voltage measurement circuit may measure potentials of mask patterns of a photomask. The control circuit may include an information storage circuit for storing distribution information on the potentials of the mask patterns, measured by the voltage measurement circuit, and information on layout patterns corresponding to the mask patterns of the photomask. The critical dimension measurement circuit may be operated, by the control circuit, in a first measurement mode and a second measurement mode running for a shorter time than the first measurement mode, and measure critical dimensions of the mask patterns.
    Type: Application
    Filed: May 8, 2018
    Publication date: March 28, 2019
    Inventors: Won Joo Park, Hyung Joo Lee, Seuk Hwan Choi, Song Seok Nam, Yoon Taek Han