Patents by Inventor Yorito Kakiuchi
Yorito Kakiuchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8916881Abstract: According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure.Type: GrantFiled: September 10, 2013Date of Patent: December 23, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Naoko Yanase, Shingo Masuko, Takaaki Yasumoto, Ryoichi Ohara, Yorito Kakiuchi, Takao Noda, Kenya Sano
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Publication number: 20140283618Abstract: According to one embodiment, a semiconductor device includes a substrate, a semiconductor substrate, an insulating gate field-effect transistor, and a strain gauge unit. The semiconductor substrate is placed on the substrate and has first and second regions. The insulating gate field-effect transistor is provided in the first region of the semiconductor substrate. The strain gauge unit has a long metal resistor, a first insulating film and a second insulating film. The long metal resistor is provided inside of an upper surface of the semiconductor substrate in the second region of the semiconductor substrate. The first insulating film is provided between the semiconductor substrate and the metal resistor and extends up to the upper surface of the semiconductor substrate. The second insulating film is provided above the first insulating film across the metal resistor.Type: ApplicationFiled: September 5, 2013Publication date: September 25, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Takaaki Yasumoto, Naoko Yanase, Ryoichi Ohara, Shingo Masuko, Kenya Sano, Yorito Kakiuchi, Takao Noda, Atsuko IIda
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Publication number: 20140014971Abstract: According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure.Type: ApplicationFiled: September 10, 2013Publication date: January 16, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Naoko YANASE, Shingo MASUKO, Takaaki YASUMOTO, Ryoichi OHARA, Yorito KAKIUCHI, Takao NODA, Kenya SANO
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Patent number: 8558244Abstract: According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure.Type: GrantFiled: February 4, 2011Date of Patent: October 15, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Naoko Yanase, Shingo Masuko, Takaaki Yasumoto, Ryoichi Ohara, Yorito Kakiuchi, Takao Noda, Kenya Sano
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Patent number: 8227834Abstract: A semiconductor device includes: a first semiconductor layer including AlXGa1-XN (0?X?1); a second semiconductor layer provided on the first semiconductor layer, including AlYGa1-YN (0?Y?1, X<Y), and having a larger bandgap than the first semiconductor layer; a source electrode provided on the second semiconductor layer; a drain electrode provided on the second semiconductor layer; and a gate electrode provided on the second semiconductor layer between the source electrode and the drain electrode. A region of the second semiconductor layer below the gate electrode at a depth short of the first semiconductor layer is doped with atoms to be negatively charged in the second semiconductor layer.Type: GrantFiled: August 26, 2011Date of Patent: July 24, 2012Assignee: Kabushiki Kaisha ToshibaInventors: Yasunobu Saito, Wataru Saito, Yorito Kakiuchi, Tomohiro Nitta, Akira Yoshioka, Tetsuya Ohno, Hidetoshi Fujimoto, Takao Noda
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Publication number: 20110309413Abstract: A semiconductor device includes: a first semiconductor layer including AlXGa1-XN (0?X?1); a second semiconductor layer provided on the first semiconductor layer, including AlYGa1-YN (0?Y?1, X<Y), and having a larger bandgap than the first semiconductor layer; a source electrode provided on the second semiconductor layer; a drain electrode provided on the second semiconductor layer; and a gate electrode provided on the second semiconductor layer between the source electrode and the drain electrode. A region of the second semiconductor layer below the gate electrode at a depth short of the first semiconductor layer is doped with atoms to be negatively charged in the second semiconductor layer.Type: ApplicationFiled: August 26, 2011Publication date: December 22, 2011Applicant: Kabushiki Kaisha ToshibaInventors: Yasunobu SAITO, Wataru SAITO, Yorito KAKIUCHI, Tomohiro NITTA, Akira YOSHIOKA, Totsuya OHNO, Hidetoshi FUJIMOTO, Takao NODA
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Patent number: 8030660Abstract: A semiconductor device includes: a first semiconductor layer including AlXGa1-XN (0?X?1); a second semiconductor layer provided on the first semiconductor layer, including AlYGa1-YN (0?Y?1, X<Y), and having a larger bandgap than the first semiconductor layer; a source electrode provided on the second semiconductor layer; a drain electrode provided on the second semiconductor layer; and a gate electrode provided on the second semiconductor layer between the source electrode and the drain electrode. A region of the second semiconductor layer below the gate electrode at a depth short of the first semiconductor layer is doped with atoms to be negatively charged in the second semiconductor layer.Type: GrantFiled: February 13, 2009Date of Patent: October 4, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Yasunobu Saito, Wataru Saito, Yorito Kakiuchi, Tomohiro Nitta, Akira Yoshioka, Tetsuya Ohno, Hidetoshi Fujimoto, Takao Noda
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Publication number: 20110193101Abstract: According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure.Type: ApplicationFiled: February 4, 2011Publication date: August 11, 2011Applicant: Kabushiki Kaisha ToshibaInventors: Naoko YANASE, Shingo Masuko, Takaaki Yasumoto, Ryoichi Ohara, Yorito Kakiuchi, Takao Noda, Kenya Sano
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Patent number: 7728354Abstract: A semiconductor device includes: a first semiconductor layer of p-type AlxGa1-xN (0?x?1); a second semiconductor layer of n-type AlyGa1-yN (0<y<1, x<y) formed on the first semiconductor layer; a control electrode formed on the second semiconductor layer; a first main electrode connected to the first semiconductor layer and the second semiconductor layer; and a second main electrode connected to the second semiconductor layer. An interface between the first semiconductor layer and the second semiconductor layer has a surface orientation of (1-101) or (11-20).Type: GrantFiled: November 14, 2007Date of Patent: June 1, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Wataru Saito, Akira Yoshioka, Hidetoshi Fujimoto, Takao Noda, Yasunobu Saito, Tomohiro Nitta, Yorito Kakiuchi
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Publication number: 20090200576Abstract: A semiconductor device includes: a first semiconductor layer including AlXGa1-XN (0?X?1); a second semiconductor layer provided on the first semiconductor layer, including AlYGa1-YN (0?Y?1, X<Y), and having a larger bandgap than the first semiconductor layer; a source electrode provided on the second semiconductor layer; a drain electrode provided on the second semiconductor layer; and a gate electrode provided on the second semiconductor layer between the source electrode and the drain electrode. A region of the second semiconductor layer below the gate electrode at a depth short of the first semiconductor layer is doped with atoms to be negatively charged in the second semiconductor layer.Type: ApplicationFiled: February 13, 2009Publication date: August 13, 2009Applicant: Kabushiki Kaisha ToshibaInventors: Yasunobu Saito, Wataru Saito, Yorito Kakiuchi, Tomohiro Nitta, Akira Yoshioka, Tetsuya Ohno, Hidetoshi Fujimoto, Takao Noda
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Patent number: 7538366Abstract: A nitride semiconductor device includes: a conductive substrate; a first semiconductor layer provided on the substrate; a second semiconductor layer provided on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a first main electrode connected to the third semiconductor layer; a second main electrode connected to the third semiconductor layer; and a control electrode provided on the third semiconductor layer. The first semiconductor layer is made of AlXGa1?XN (0?X?1) of a first conductivity type. The second semiconductor layer is made of a first nitride semiconductor. The third semiconductor layer is made of a second nitride semiconductor which is undoped or of n-type and has a wider bandgap than the first nitride semiconductor.Type: GrantFiled: April 25, 2007Date of Patent: May 26, 2009Assignee: Kabushiki Kaisha ToshibaInventors: Wataru Saito, Akira Yoshioka, Hidetoshi Fujimoto, Yasunobu Saito, Takao Noda, Tomohiro Nitta, Yorito Kakiuchi
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Publication number: 20080116486Abstract: A semiconductor device includes: a first semiconductor layer of p-type AlxGa1-xN (0?x?1); a second semiconductor layer of n-type AlyGa1-yN (0<y<1, x<y) formed on the first semiconductor layer; a control electrode formed on the second semiconductor layer; a first main electrode connected to the first semiconductor layer and the second semiconductor layer; and a second main electrode connected to the second semiconductor layer. An interface between the first semiconductor layer and the second semiconductor layer has a surface orientation of (1-101) or (11-20).Type: ApplicationFiled: November 14, 2007Publication date: May 22, 2008Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Wataru SAITO, Akira Yoshioka, Hidetoshi Fujimoto, Takao Noda, Yasunobu Saito, Tomohiro Nitta, Yorito Kakiuchi
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Publication number: 20070254431Abstract: A nitride semiconductor device includes: a conductive substrate; a first semiconductor layer provided on the substrate; a second semiconductor layer provided on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a first main electrode connected to the third semiconductor layer; a second main electrode connected to the third semiconductor layer; and a control electrode provided on the third semiconductor layer. The first semiconductor layer is made of AlXGa1?XN (0?X?1) of a first conductivity type. The second semiconductor layer is made of a first nitride semiconductor. The third semiconductor layer is made of a second nitride semiconductor which is undoped or of n-type and has a wider bandgap than the first nitride semiconductor.Type: ApplicationFiled: April 25, 2007Publication date: November 1, 2007Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Wataru Saito, Akira Yoshioka, Hidetoshi Fujimoto, Yasunobu Saito, Takao Noda, Tomohiro Nitta, Yorito Kakiuchi