Patents by Inventor Yorito Ota
Yorito Ota has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100273535Abstract: A radio-frequency power amplifier device includes an input terminal for which a first radio-frequency signal for a CDMA mode within a first frequency band and a third radio-frequency signal for a TDMA mode within the first frequency band are selectively provided, a second input terminal for which a second radio-frequency signal for a CDMA mode within a second frequency band and a fourth radio-frequency signal for a TDMA mode within the second frequency band are selectively provided, a first power amplifier unit which to amplifies the provided first radio-frequency signal, a second power amplifier unit which amplifies the provided second radio-frequency signal, a third power amplifier unit which amplifies the provided third radio-frequency signal, and a fourth power amplifier unit which amplifies the provided fourth radio-frequency signal. These power amplifier units are arranged in order of the first power amplifier unit to the fourth power amplifier unit.Type: ApplicationFiled: April 13, 2010Publication date: October 28, 2010Applicant: PANASONIC CORPORATIONInventors: Masahiko INAMORI, Motoyoshi IWATA, Kaname MOTOYOSHI, Masahiro MAEDA, Yorito OTA
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Patent number: 7301181Abstract: The present invention aims at providing a heterojunction bipolar transistor having improved breakdown voltage on operation for high power output, and includes: a GaAs semiconductor substrate 100; an n+-type GaAs sub-collector layer 110; an n-type GaAs collector layer 120; a p-type GaAs base layer 130; an emitter layer 140; an n-type GaAs emitter cap layer 150; and an n-type InGaAs emitter contact layer 160. The emitter layer 140 has a multilayer structure including an n-type or non-doped first emitter layer 141 and an n-type second emitter layer 142 which are laminated in sequence. The first emitter layer 141 is made of a semiconductor material including Al, while the second emitter layer 142 is made of InxGa1-xP (0<x<1).Type: GrantFiled: November 4, 2004Date of Patent: November 27, 2007Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Keiichi Murayama, Yorito Ota, Akiyoshi Tamura
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Publication number: 20070268073Abstract: An electronic device includes: a plurality of RF power amplifiers; and an impedance converting circuit. The RF power amplifiers amplify RF signals having different frequencies. The impedance converting circuit receives RF signals output from output terminals of the respective RF power amplifiers at a plurality of input terminals disposed to face the respective output terminals, and performs impedance conversion.Type: ApplicationFiled: December 18, 2006Publication date: November 22, 2007Inventors: Hidefumi Suzaki, Hiroyasu Takehara, Yorito Ota
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Patent number: 7228110Abstract: A high frequency device includes a transmission/reception amplifier 13 that amplifies and outputs an input signal, and a transmission/reception switch 2 that gang switches internally so that during transmission an input of the transmission/reception amplifier 13 is connected to an up mixer and an output of the transmission/reception amplifier 13 is connected to an antenna unit 5, and so that during reception the output of the transmission/reception amplifier 13 is connected to a down mixer and the input of the transmission/reception amplifier 13 is connected to the antenna unit 5.Type: GrantFiled: October 3, 2003Date of Patent: June 5, 2007Assignee: Matsushita Electric Industrial Co., Ltd.Inventor: Yorito Ota
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Patent number: 7081799Abstract: There is provided a bipolar transistor that enables a desirably enhanced high-frequency performance to be obtained when used as an oscillation amplifier of an oscillation circuit, and that is miniaturized and reduced in cost. A capacitance adjustment line (11) connected to a base pad (7) forms a parasitic capacitor with respect to an N+ collector substrate by interposing an insulating film (3) and an N collector substrate therebetween, thereby increasing collector-base capacitance Ccb. This capacitor is incorporated into a bipolar transistor, which functions as an oscillation amplifier and has a small transistor operation region (2), at least as a part of a balance capacitor constituting the oscillation circuit in the course of production of a semiconductor.Type: GrantFiled: July 26, 2005Date of Patent: July 25, 2006Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yorito Ota, Kazuhiro Arai, Yasuyuki Toyoda, Shinichi Sonetaka
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Publication number: 20060076673Abstract: A semiconductor device has a plurality of external connection lead terminals including an input lead terminal, an output lead terminal, and an RF grounding lead terminal, a heat dissipation plate connected to the RF grounding lead terminal, a semiconductor device and a printed circuit board each mounted on the heat dissipation plate, and a mold resin for sealing the semiconductor device, the printed circuit board, and the heat dissipation plate such that at least a part of the back surface of the heat dissipation plate is exposed. The semiconductor device amplifies a signal inputted to the input lead terminal and outputs the amplified signal from the output lead terminal.Type: ApplicationFiled: September 15, 2005Publication date: April 13, 2006Inventors: Masayuki Miyaji, Sadao Nagata, Hirotada Taniuchi, Yorito Ota, Takahiro Iwakiri, Tomotaka Sakatani
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Publication number: 20060044067Abstract: In a high-frequency power amplifier of the present invention, when a short circuit occurs between a gate or source or between a base and emitter in one of unit cells comprising a multi-cell, influence on the operations of the other normal unit cells is suppressed by a direct-current interrupting characteristic of a diode disposed for each of the unit cells.Type: ApplicationFiled: August 30, 2005Publication date: March 2, 2006Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Hidefumi Suzaki, Jae-Woo Park, Motoyoshi Iwata, Yorito Ota
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Patent number: 6974751Abstract: A semiconductor device includes a SiC substrate and an ohmic electrode, a semiconductor member including a SiC member and a SiGe member being formed between the SiC substrate and the ohmic electrode, wherein the semiconductor member is composed of a SiGe member formed on a SiC member, and the ohmic electrode is formed on the SiGe member, whereby the ohmic electrode with a low resistance can be formed on the SiC substrate without conducting a heat treatment at a high temeprature.Type: GrantFiled: March 22, 2004Date of Patent: December 13, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventor: Yorito Ota
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Publication number: 20050269596Abstract: There is provided a bipolar transistor that enables a desirably enhanced high-frequency performance to be obtained when used as an oscillation amplifier of an oscillation circuit, and that is miniaturized and reduced in cost. A capacitance adjustment line (11) connected to a base pad (7) forms a parasitic capacitor with respect to an N+ collector substrate by interposing an insulating film (3) and an N collector substrate therebetween, thereby increasing collector-base capacitance Ccb. This capacitor is incorporated into a bipolar transistor, which functions as an oscillation amplifier and has a small transistor operation region (2), at least as a part of a balance capacitor constituting the oscillation circuit in the course of production of a semiconductor.Type: ApplicationFiled: July 26, 2005Publication date: December 8, 2005Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Yorito Ota, Kazuhiro Arai, Yasuyuki Toyoda, Shinichi Sonetaka
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Publication number: 20050199909Abstract: The present invention aims at providing a heterojunction bipolar transistor having improved breakdown voltage on operation for high power output, and includes: a GaAs semiconductor substrate 100; an n+-type GaAs sub-collector layer 110; an n-type GaAs collector layer 120; a p-type GaAs base layer 130; an emitter layer 140; an n-type GaAs emitter cap layer 150; and an n-type InGaAs emitter contact layer 160. The emitter layer 140 has a multilayer structure including an n-type or non-doped first emitter layer 141 and an n-type second emitter layer 142 which are laminated in sequence. The first emitter layer 141 is made of a semiconductor material including Al, while the second emitter layer 142 is made of InxGa1-xP (0<x<1).Type: ApplicationFiled: November 4, 2004Publication date: September 15, 2005Inventors: Keiichi Murayama, Yorito Ota, Akiyoshi Tamura
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Patent number: 6940357Abstract: There is provided a bipolar transistor that enables a desirably enhanced high-frequency performance to be obtained when used as an oscillation amplifier of an oscillation circuit, and that is miniaturized and reduced in cost. A capacitance adjustment line (11) connected to a base pad (7) forms a parasitic capacitor with respect to an N+ collector substrate by interposing an insulating film (3) and an N collector substrate therebetween, thereby increasing collector-base capacitance Ccb. This capacitor is incorporated into a bipolar transistor, which functions as an oscillation amplifier and has a small transistor operation region (2), at least as a part of a balance capacitor constituting the oscillation circuit in the course of production of a semiconductor.Type: GrantFiled: July 3, 2003Date of Patent: September 6, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Yorito Ota, Kazuhiro Arai, Yasuyuki Toyoda, Shinichi Sonetaka
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Patent number: 6838709Abstract: A bipolar transistor includes the first group of transistors 610a, the second group of transistors 610b, the third group of transistors 610c and the fourth group of transistors 610d. The groups of transistors have unit transistors with emitters, bases and collectors that are connected electrically in parallel and the number of unit transistors is different from group to group and 2, 4, 8, and 16, respectively.Type: GrantFiled: October 9, 2003Date of Patent: January 4, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Shinichi Sonetaka, Yasuyuki Toyoda, Kazuhiro Arai, Yorito Ota
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Publication number: 20040178413Abstract: A semiconductor device includes a SiC substrate and an ohmic electrode, a semiconductor member including a SiC member and a SiGe member being formed between the SiC substrate and the ohmic electrode, wherein the semiconductor member is composed of a SiGe member formed on a SiC member, and the ohmic electrode is formed on the SiGe member, whereby the ohmic electrode with a low resistance can be formed on the SiC substrate without conducting a heat treatment at a high temeprature.Type: ApplicationFiled: March 22, 2004Publication date: September 16, 2004Applicant: Matsushita Electric Industrial Co., Ltd.Inventor: Yorito Ota
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Patent number: 6770912Abstract: A semiconductor device includes a SiC substrate and an ohmic electrode, a semiconductor member including a SiC member and a SiGe member being formed between the SiC substrate and the ohmic electrode, wherein the semiconductor member is composed of a SiGe member formed on a SiC member, and the ohmic electrode is formed on the SiGe member, whereby the ohmic electrode with a low resistance can be formed on the SiC substrate without conducting a heat treatment at a high temperature.Type: GrantFiled: February 19, 2002Date of Patent: August 3, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventor: Yorito Ota
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Publication number: 20040127169Abstract: A high frequency device includes a transmission/reception amplifier 13 that amplifies and outputs an input signal, and a transmission/reception switch 2 that gang switches internally so that during transmission an input of the transmission/reception amplifier 13 is connected to an up mixer and an output of the transmission/reception amplifier 13 is connected to an antenna unit 5, and so that during reception the output of the transmission/reception amplifier 13 is connected to a down mixer and the input of the transmission/reception amplifier 13 is connected to the antenna unit 5.Type: ApplicationFiled: October 3, 2003Publication date: July 1, 2004Inventor: Yorito Ota
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Publication number: 20040075108Abstract: A bipolar transistor includes the first group of transistors 610a, the second group of transistors 610b, the third group of transistors 610c and the fourth group of transistors 610d. The groups of transistors have unit transistors with emitters, bases and collectors that are connected electrically in parallel and the number of unit transistors is different from group to group and 2, 4, 8, and 16, respectively.Type: ApplicationFiled: October 9, 2003Publication date: April 22, 2004Inventors: Shinichi Sonetaka, Yasuyuki Toyoda, Kazuhiro Arai, Yorito Ota
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Patent number: 6710380Abstract: The diode of the present invention includes: a cathode electrode and an anode electrode that are disposed on a semiconductor substrate and are spaced apart from each other; and a shielding metal member placed between the cathode and anode electrodes.Type: GrantFiled: May 20, 2002Date of Patent: March 23, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Junko Iwanaga, Yorito Ota, Mitsuru Tanabe
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Publication number: 20040036544Abstract: There is provided a bipolar transistor that enables a desirably enhanced high-frequency performance to be obtained when used as an oscillation amplifier of an oscillation circuit, and that is miniaturized and reduced in cost. A capacitance adjustment line (11) connected to a base pad (7) forms a parasitic capacitor with respect to an N+ collector substrate by interposing an insulating film (3) and an N collector substrate therebetween, thereby increasing collector-base capacitance Ccb. This capacitor is incorporated into a bipolar transistor, which functions as an oscillation amplifier and has a small transistor operation region (2), at least as a part of a balance capacitor constituting the oscillation circuit in the course of production of a semiconductor.Type: ApplicationFiled: July 3, 2003Publication date: February 26, 2004Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Yorito Ota, Kazuhiro Arai, Yasuyuki Toyoda, Shinichi Sonetaka
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Patent number: 6555900Abstract: A package according to the present invention includes: a support for mounting a semiconductor component on the upper surface thereof; a positioning control plate, which is secured to the support and includes an opening or a notch; and a lead provided on the support for establishing electrical continuity between the semiconductor component mounted on the support and an external component. The positioning control plate houses at least a lower part of the semiconductor component inside the opening or the notch, thereby controlling a position of the semiconductor component on the support.Type: GrantFiled: October 6, 1999Date of Patent: April 29, 2003Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Shigeru Morimoto, Yorito Ota, Masahiro Maeda
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Publication number: 20020155643Abstract: The diode of the present invention includes: a cathode electrode and an anode electrode that are disposed on a semiconductor substrate and are spaced apart from each other; and a shielding metal member placed between the cathode and anode electrodes.Type: ApplicationFiled: May 20, 2002Publication date: October 24, 2002Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Inventors: Junko Iwanaga, Yorito Ota, Mitsuru Tanabe