Abstract: In an embodiment, a reactor includes a section, wherein at least a portion of the section includes a base layer, wherein the base layer has a first composition that contains a silicide-forming metal element; and a silicide coating layer, wherein the silicide coating layer is formed by a process of exposing, at a first temperature above 600 degrees Celsius and a sufficient low pressure, the base layer having a sufficient amount of the silicide-forming metal element to a sufficient amount of a silicon source gas having a sufficient amount of silicon element, wherein the silicon source gas is capable of decomposing to produce the sufficient amount of silicon element at a second temperature below 1000 degrees Celsius; reacting the sufficient amount of the silicide-forming metal element with the sufficient amount of silicon element, and forming the silicide coating layer.

Abstract: In one embodiment, the instant invention includes a method having steps of: feeding a fluidizing gas stream having at least 80 percent of halogenated silicon source gas or mixture of halogenated silicon source gases to fluidize silicon seeds in a reactor, achieving the fluidization of silicon seeds in a reaction zone prior to when the fluidizing gas stream reaches at least 600 degrees Celsius; heating the fluidized silicon seeds residing within the reaction zone to a sufficient reaction temperature to result in more than 50% of the equilibrium conversion for the thermal decomposition reaction in the reaction zone of the reactor; and maintaining the fluidizing gas stream at the sufficient reaction temperature and a sufficient residence time within the reaction zone hereby resulting in more than 50% of the equilibrium conversion for the thermal decomposition reaction in a single stage within the reaction zone to produce an elemental silicon.

Abstract: In an embodiment, a surface of the present invention comprises of at least one base layer, wherein the at least one base layer contains at least one silicide-forming metal element; and at least one silicide coating layer, wherein the at least one silicide coating layer is formed by a process of: i) exposing the at least one base layer having a sufficient amount of the at least one silicide-forming metal element to a sufficient amount of at least one silicon source gas having a sufficient amount of silicon element, ii) reacting the sufficient amount of the at least one silicide-forming metal element with the sufficient amount of silicon element, and iii) forming the at least one silicide coating layer.

Abstract: In one embodiment, a method includes feeding at least one silicon source gas and polysilicon silicon seeds into a reaction zone; maintaining the at least one silicon source gas at a sufficient temperature and residence time within the reaction zone so that a reaction equilibrium of a thermal decomposition of the at least one silicon source gas is substantially reached within the reaction zone to produce an elemental silicon; wherein the decomposition of the at least one silicon source gas proceeds by the following chemical reaction: 4HSiCl3??Si+3SiCl4+2H2, wherein the sufficient temperature is a temperature range between about 600 degrees Celsius and about 1000 degrees Celsius; and c) maintaining a sufficient amount of the polysilicon silicon seeds in the reaction zone so as to result in the elemental silicon being deposited onto the polysilicon silicon seeds to produce coated particles.

Abstract: In an embodiment, a reactor includes a section, wherein at least a portion of the section includes a base layer, wherein the base layer has a first composition that contains a silicide-forming metal element; and a silicide coating layer, wherein the silicide coating layer is formed by a process of exposing, at a first temperature above 600 degrees Celsius and a sufficient low pressure, the base layer having a sufficient amount of the silicide-forming metal element to a sufficient amount of a silicon source gas having a sufficient amount of silicon element, wherein the silicon source gas is capable of decomposing to produce the sufficient amount of silicon element at a second temperature below 1000 degrees Celsius; reacting the sufficient amount of the silicide-forming metal element with the sufficient amount of silicon element, and forming the silicide coating layer.

Abstract: A method of binding pollutants, such as sulfur dioxide, hydrochloric acid and/or hydrofluoric acid, in flue gas in one or more combustion plants.

Abstract: An apparatus for reducing the concentration of nitrogen oxides in flue gases produced in a furnace of a combustion unit includes a device for maintaining combustion reactions in the furnace, the combustion reactions resulting in the production of hot gases containing nitrogen oxides, the hot gases flowing mainly upwardly within the furnace, internal heat transfer surfaces within the furnace for recovering heat from the mainly upward flow of hot gases, an introducer for introducing nitrogen oxides reducing agent into the upward flow of hot gases in the furnace, for reducing the concentration of nitrogen oxides in the hot gases, wherein the introducer is integrally connected to the internal heat transfer surfaces, for keeping the temperature of the reducing agent at a sufficiently low temperature level upon introduction thereof into the furnace, and for efficiently mixing the reducing agent with the upward flow of hot gases, and a discharge for discharging flue gases from the furnace.

Abstract: The present invention refers to an improved method and an improved apparatus for reducing the concentration of nitrogen oxides in flue gases produced by the combustion of carbonaceous fuel in combustion units having a furnace with a fluidized bed of solids therein. Hot gases produced within the furnace flow mainly upward within the furnace. Heat is recovered from the hot gases and hot solid material by heat transfer surfaces within the furnace. A nitrogen oxides reducing agent is introduced into the furnace through injection means integrally connected to the heat transfer surfaces, for keeping the temperature of the reducing agent at a sufficiently low temperature level at the introduction thereof and for efficiently mixing it with the mainly upward flowing hot gases.