Abstract: A method is disclosed for manufacturing lab grown diamond material by plasma enhanced chemical vapour deposition (PECVD). A substrate is exposed to a plasma containing carbon species while supported within a recess in a holder, resulting in a single crystal diamond (SCD) growing on the substrate while polycrystalline diamond (PCD) is deposited on the substrate holder. The relative rate of growth of the single crystal diamond on the substrate and the polycrystalline diamond on the surface of the holder is set, by control of at least one of the applied energy, cooling of the substrate holder and the chemical composition of the process gases, such that the single crystal diamond grown on the substrate protrudes above the surface of the holder and is constrained not to increase or to reduce in cross sectional area with increased distance from the surface of the holder by simultaneous growth of a polycrystalline diamond layer on the surface of the holder.

Abstract: Particulated structures and their method of manufacture for use in an electrical generator employing gas-mediated charge transfer are disclosed. The structures comprise a multiplicity of particles which contain voids between first and second opposing surfaces of said particles. At least a portion of said opposing surfaces are modified such that the charge transferability of said first opposing surfaces differs from the charge transferability of said second opposing surfaces.

Abstract: Particulated structures and their method of manufacture for use in an electrical generator employing gas-mediated charge transfer are disclosed. The structures comprise a multiplicity of particles which contain voids between first and second opposing surfaces of said particles. At least a portion of said opposing surfaces are modified such that the charge transferability of said first opposing surfaces differs from the charge transferability of said second opposing surfaces.

Abstract: Particulated structures and their method of manufacture for use in an electrical generator employing gas-mediated charge transfer are disclosed. The structures comprise a multiplicity of particles which contain voids between first and second opposing surfaces of said particles. At least a portion of said opposing surfaces are modified such that the charge transferability of said first opposing surfaces differs from the charge transferability of said second opposing surfaces.