Abstract: A semiconductor light emitting device includes a base substrate, lead electrodes provided on the base substrate, at least one semiconductor light emitting element loaded on the base substrate so as to be spaced apart from the lead electrodes and radiating blue light, a connection member for electrically interconnecting the electrodes and the semiconductor light emitting element, a reflector extended from a bottom of the base substrate to a predetermined height for surrounding the semiconductor light emitting element, and a translucent cover layer formed in the receiving space for housing the light emitting element, the translucent cover layer containing a color-shifting substance for absorbing at least a part of blue light radiated from the light emitting element to radiate a light having a different wavelength.

Abstract: A semiconductor light emitting device includes a base substrate, lead electrodes provided on the base substrate, at least one semiconductor light emitting element loaded on the base substrate so as to be spaced apart from the lead electrodes and radiating blue light, a connection member for electrically interconnecting the electrodes and the semiconductor light emitting element, a reflector extended from a bottom of the base substrate to a predetermined height for surrounding the semiconductor light emitting element, and a translucent cover layer formed in the receiving space for housing the light emitting element, the translucent cover layer containing a color-shifting substance for absorbing at least a part of blue light radiated from the light emitting element to radiate a light having a different wavelength.

Abstract: An image sensor with improved productivity and sensitivity is provided. The image sensor includes a plurality of unit pixels, each unit pixel including an oxide film formed upon a semiconductor substrate; a gate electrode formed on the oxide film; a photodiode N-type region formed within the semiconductor substrate and interfacing with the oxide film, which is space apart from the gate electrode by a predetermined distance and disposed on one side of the gate electrode; and a floating diffusion region formed within the semiconductor substrate and interfacing with the oxide film, which is spaced apart from the gate electrode by a predetermined distance and is disposed on the other side of the gate electrode.

Abstract: An semiconductor chip package for image sensor includes an semiconductor chip for image sensor, a base member with a groove to that the semiconductor chip is mounted therein, a lead formed through the base member and spaced apart from the semiconductor chip, a conductive connecting member for electric connection between the lead and the semiconductor chip, and a transparent seal material formed in the groove for sealing the semiconductor chip for image sensor and the conductive connecting member, wherein an upper surface of the seal material is parallel with an upper surface of the semiconductor chip.

Abstract: An image sensor with improved productivity and sensitivity is provided. The image sensor includes a plurality of unit pixels, and each unit pixel includes: an oxide film formed upon a semiconductor substrate; a gate electrode formed on the oxide film; a photodiode N-type region formed within the semiconductor substrate and having an interface with the oxide film, which is spaced apart from the gate electrode by a predetermined distance and disposed on one side of the gate electrode; and an N+-type region acting as a floating diffusion region, formed within the semiconductor substrate and having an interface with the oxide film, which is spaced apart from the gate electrode by a predetermined distance and is disposed on the other side of the gate electrode.

Abstract: According to an image pickup device, a swing-driver unit is provided for vibrating an image sensor unit, thereby causing the image sensor unit to perform an image pickup operation in such a manner as to periodically shift to different sampling positions at different time points in one frame period. The swing-driver comprises a pair of plate-like bimorph piezoelectric elements for stably supporting the image sensor unit. The image sensor unit and the piezoelectric elements are sealed in a ceramic frame body in a compact manner. The electrical connection between the image sensor unit and lead wires formed on the frame is performed by a flexible film connector. The electrical connection between the piezoelectric elements and the lead wires is performed by wiring patterns preformed on the frame.