Abstract: Provided are a method of manufacturing a semiconductor, a nonvolatile semiconductor memory device and a method of manufacturing the same, wherein: the memory device has a plurality of memory cells; a buried diffusion layer serves as a signal line; and, a buried diffusion layer disposed adjacent to each of opposite end portions of a lower floating gate is free from variations in width resulted from misalignment occurring in an optical aligner. In the memory device, for example: the floating gate is formed in an active region of a P-type semiconductor substrate through a gate oxide film; an N-type drain region and an N-type source region are formed in opposite end portions of the floating gate; and, a pair of device isolation shielding electrode extends in parallel with the floating gate outside both the drain region and the source region to cover adjacent ones of the memory cells.

Abstract: Provided are a method of manufacturing a semiconductor, a nonvolatile semiconductor memory device and a method of manufacturing the same, wherein: the memory device has a plurality of memory cells; a buried diffusion layer serves as a signal line; and, a buried diffusion layer disposed adjacent to each of opposite end portions of a lower floating gate is free from variations in width resulted from misalignment occurring in an optical aligner. In the memory device, for example: the floating gate is formed in an active region of a P-type semiconductor substrate through a gate oxide film; an N-type drain region and an N-type source region are formed in opposite end portions of the floating gate; and, a pair of device isolation shielding electrode extends in parallel with the floating gate outside both the drain region and the source region to cover adjacent ones of the memory cells.

Abstract: Provided are a method of manufacturing a semiconductor, a nonvolatile semiconductor memory device and a method of manufacturing the same, wherein: the memory device has a plurality of memory cells; a buried diffusion layer serves as a signal line; and, a buried diffusion layer disposed adjacent to each of opposite end portions of a lower floating gate is free from variations in width resulted from misalignment occurring in an optical aligner. In the memory device, for example: the floating gate is formed in an active region of a P-type semiconductor substrate through a gate oxide film; an N-type drain region and an N-type source region are formed in opposite end portions of the floating gate; and, a pair of device isolation shielding electrode extends in parallel with the floating gate outside both the drain region and the source region to cover adjacent ones of the memory cells.

Abstract: A nonvolatile memory includes a first conductive type of semiconductor region and a second conductive type of impurity diffusion layer. The impurity diffusion layer is formed by doping into a predetermined region of the semiconductor region, impurity of the second conductive type that differs from the first conductive type. The impurity diffusion layer is used as a bit line. The impurity diffusion layer has a specific layer in which an impurity density is substantially equal to or higher than 1×1018 cm−3, and wherein B>A where A is a diffusion length in a lateral direction from the predetermined region and B is a thickness of the specific layer in a depth direction.

Abstract: An apparatus for producing semiconductor devices. A first automatic carrying system operates for taking from a lead frame tray a lead frame which mounts thereon semiconductor chips and for setting the lead frame on the suscepter. A thin film forming device operates for forming an insulating film on a surface of the lead frame disposed on the suscepter. A second automatic carrying system operates for taking from the suscepter the lead frame formed with the insulating film and for setting the lead frame into another lead frame tray. A transferring device operates for transferring the lead frame disposed on the suscepter from the first automatic carrying system through the thin film forming device to the second automatic carrying system.