Abstract: There are provided a foaming filler member which allows, even when the inner space of a hollow member has a protruding space, easy filling of the protruding space without using an extra member, a heat-foamable sheet used for the foaming filler member, a method for manufacturing the heat-foamable sheet, and a method for filling the inner space of the hollow member. A heat-foamable sheet which extends in one direction when heated at 100 to 130° C. for 20 minutes and has an extension ratio of 5 to 50% in the extension direction is manufactured by stretch-forming a heat-foamable material. Even when the inner space has the protruding space, the protruding space can be easily filled at low cost without using an extra member by using the heat-foamable sheet as the foaming filler member, disposing the foaming filler member in the main space of the inner space, and foaming it such that the extending direction of the heat-foamable sheet is oriented toward the protruding space.

Abstract: The present invention relates to a water-permeable adhesive tape for processing semiconductor wafers and/or semiconductor related materials comprising at least one base film and an adhesive, wherein said at least one base film possesses perforations and has a cavity ratio of 3.0 to 90%. The water-permeable adhesive tape is in particular suitable for dicing semiconductor wafers and/or semiconductor related materials using laser technology.

Abstract: A semiconductor device obtained by encapsulating a semiconductor element with a thermosetting resin composition comprising a thermosetting resin (Component I) and a hardener (Component II) having the following components III and IV incorporated therein. The semiconductor device is thus provided with a high heat resistance at infrared reflow step and a high flame retardance, showing a drastically enhanced reliability.(III) A metal hydroxide represented by the following general formula (1):n(M.sub.a O.sub.b).cH.sub.2 O (1)wherein M represents a metallic element; a, b and c each represents a positive number; and n represents a positive number of 1 or more, with the proviso that when M.sub.a O.sub.b is repeated, the plurality of M's may be the same or different and that a and b may be the same or different; and(IV) a metal oxide represented by the following general formula (2):n'(Q.sub.d O.sub.

Abstract: A semiconductor device obtained by encapsulating a semiconductor element with a thermosetting resin composition comprising a thermosetting resin (Component I) and a hardener (Component II) having the following components III and IV incorporated therein. The semiconductor device is thus provided with a high heat resistance at infrared reflow step and a high flame retardance, showing a drastically enhanced reliability.(III) A metal hydroxide represented by the following general formula (1):n(M.sub.a O.sub.b).cH.sub.2 O (1)wherein M represents a metallic element; a, b and c each represents a positive number; and n represents a positive number of 1 or more, with the proviso that when M.sub.a O.sub.b is repeated, the plurality of M's may be the same or different and that a and b may be the same or different; and(IV) a metal oxide represented by the following general formula (2):n'(Q.sub.d O.sub.