Abstract: A solid state imaging device has a global shutter structure and includes: a photodetector; a wiring layer; a first transparent insulating film disposed immediately above the photodetector and penetrating the wiring layer; a transparent protective film covering the wiring layer and the first transparent insulating film, and having a higher refractive index than the first transparent insulating film; a first projection provided on the transparent protective film and having a quadrilateral shape in top view; and a second transparent insulating film having a lower refractive index than the first projection.

Abstract: A solid state imaging device has a global shutter structure and includes: a photodetector; a wiring layer; a first transparent insulating film disposed immediately above the photodetector and penetrating the wiring layer; a transparent protective film covering the wiring layer and the first transparent insulating film, and having a higher refractive index than the first transparent insulating film; a first projection provided on the transparent protective film and having a quadrilateral shape in top view; and a second transparent insulating film having a lower refractive index than the first projection.

Abstract: Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units formed on a semiconductor substrate; an antireflection film arranged above the semiconductor substrate, except above the light receiving units; and microlenses arranged above the light receiving units, in which the antireflection film is formed at a position equal to or higher than a position of the microlenses.

Abstract: Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units formed on a semiconductor substrate; an antireflection film arranged above the semiconductor substrate, except above the light receiving units; and microlenses arranged above the light receiving units, in which the antireflection film is formed at a position equal to or higher than a position of the microlenses.

Abstract: Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units formed on a semiconductor substrate; an antireflection film arranged above the semiconductor substrate, except above the light receiving units; and microlenses arranged above the light receiving units, in which the antireflection film is formed at a position equal to or higher than a position of the microlenses.

Abstract: The solid-state imaging device of the present invention includes: light-receiving units formed on a semiconductor substrate; color filters respectively formed on corresponding light-receiving units; and in-layer lenses formed above the light-receiving units and below the color filters, in which the in-layer lenses have different curvature shapes depending on colors of the corresponding color filters.

Abstract: A solid-state imaging device includes: a plurality of light-receiving parts arranged in an array in a substrate and performing photoelectric conversion on incident light; and a plurality of color separators each provided for adjacent four of the light-receiving parts arranged in two rows and two columns. Each of the color separators includes first through fourth color-separating elements and first and second mirror elements.

Abstract: A solid-state imaging device includes: a plurality of light-receiving parts arranged in an array in a substrate and performing photoelectric conversion on incident light; and a plurality of color separators each provided for adjacent four of the light-receiving parts arranged in two rows and two columns. In each of the color separators, absorption color filters and transmission color filters are combined.

Abstract: Provided is a solid-state imaging device that realizes sensitivity improvement while maintaining flare prevention effect even when miniaturization of cell is advanced. The solid-state imaging device according to the present invention includes: light receiving units formed on a semiconductor substrate; an antireflection film arranged above the semiconductor substrate, except above the light receiving units; and microlenses arranged above the light receiving units, in which the antireflection film is formed at a position equal to or higher than a position of the microlenses.

Abstract: A solid-state imaging device includes: a plurality of light-receiving parts arranged in an array in a substrate and performing photoelectric conversion on incident light; and a plurality of color separators each provided for adjacent four of the light-receiving parts arranged in two rows and two columns. In each of the color separators, absorption color filters and transmission color filters are combined.

Abstract: A solid-state imaging device includes: a plurality of light-receiving parts arranged in an array in a substrate and performing photoelectric conversion on incident light; and a plurality of color separators each provided for adjacent four of the light-receiving parts arranged in two rows and two columns. Each of the color separators includes first through fourth color-separating elements and first and second mirror elements.

Abstract: The solid-state imaging device of the present invention includes: light-receiving units formed on a semiconductor substrate; color filters respectively formed on corresponding light-receiving units; and in-layer lenses formed above the light-receiving units and below the color filters, in which the in-layer lenses have different curvature shapes depending on colors of the corresponding color filters.

Abstract: The solid-state image-sensor in the present invention is made by stacking a flattened transparent insulating film 2 made out of material such as boron phosphate silicate glass (BPSG), a convex-topped high refractive index (n>1.8) in-layer lens 3, a color filter layer 5 made out of a color resist containing a dye or pigment, a transparent film 6 made out of an acrylic transparent resin, and a micro-lens (also known as a top lens) 7, on top of a photodiode 1 formed on a silicon semiconductor substrate 10, where the color filter layer 5 is directly applied on the in-layer lens 3.

Abstract: An idle adjusting device for an engine having an air intake passage and a throttle valve disposed in the air intake passage, includes an auxiliary passage communicating with the air intake passage in such a manner as to bypass the throttle valve. A first member protrudes into the auxiliary passage so as to locally reduce the cross-sectional area of the auxiliary passage. A second member movably protrudes into the auxiliary passage at a position relatively near the first member so that the first and second members will cooperate to adjust the effective cross-sectional area of the auxiliary passage in accordance with movement of the second member.