Abstract: A spintronics element (100) includes an antiferromagnetic layer (20) and an MTJ element (30). The antiferromagnetic layer (20) is made of a canted antiferromagnet having a canted magnetic moment to exhibit a relatively tiny magnetization, and allows an electric current flowing in one direction (y-axis direction) parallel to an in-plane direction to induce spin accumulation in which spins of electrons are polarized parallel to or obliquely to an out-of-plane direction (z-axis direction). The MTJ element (30) is stacked on the antiferromagnetic layer (20), contains a ferromagnet with a magnetization (M11) aligned with the out-of-plane direction that is a stacking direction, and allows a spin current generated in the antiferromagnetic layer (20) to exert a spin-orbit torque on the magnetization (M11), thereby causing reversal of the magnetization (M11).

Abstract: In order to obtain an inductor element advantageous for miniaturization, an inductor element 10 according to an embodiment of the present disclosure is provided with a metal medium 2 in which ordered spins are spatially arranged so as to have a non-collinear spin structure when traced in a certain direction. In the inductor element, an electric current I is applied through the metal medium so as to have a projective component of the direction. Preferable examples of the non-collinear spin structure for the metal medium include a spiral structure and a cycloidal structure.

Abstract: An electric current-spin current conversion device according to the invention performs conversion between electric current and spin current utilizing the spin Hall effect or the inverse spin Hall effect of a 5d transition metal. A spin accumulation apparatus according to the invention includes a non-magnetic body in which injected spins are accumulated and an injection unit that injects spins into the non-magnetic body, wherein said injection unit comprises said electric current-spin current conversion device provided on said non-magnetic body, and an electric power source that supplies an electric current to said electric current-spin current conversion device in such a way that a spin current flowing toward said non-magnetic body is generated by the spin Hall effect.

Abstract: The spin injection source comprises a nonmagnetic conductor, an MgO film, and a ferromagnet, and injects spin from the ferromagnet to the nonmagnetic conductor. The MgO film is annealed at temperature of between 300° C. and 500° C. The annealing duration is preferably between 30 and 60 minutes. By annealing, the oxygen vacancies increases and the electric resistance of MgO film decreases. And thus the spin injection efficiency in the spin injection source improves.

Abstract: An electric current-spin current conversion device according to the invention performs conversion between electric current and spin current utilizing the spin Hall effect or the inverse spin Hall effect of a 5d transition metal. A spin accumulation apparatus according to the invention includes a non-magnetic body in which injected spins are accumulated and an injection unit that injects spins into the non-magnetic body, wherein said injection unit comprises said electric current-spin current conversion device provided on said non-magnetic body, and an electric power source that supplies an electric current to said electric current-spin current conversion device in such a way that a spin current flowing toward said non-magnetic body is generated by the spin Hall effect.

Abstract: The spin injection source comprises a nonmagnetic conductor, an MgO film, and a ferromagnet, and injects spin from the ferromagnet to the nonmagnetic conductor. The MgO film is annealed at temperature of between 300° C. and 500° C. The annealing duration is preferably between 30 and 60 minutes. By annealing, the oxygen vacancies increases and the electric resistance of MgO film decreases. And thus the spin injection efficiency in the spin injection source improves.

Abstract: The magnetization state of a ferromagnetic material is controlled by applying a current pulse to it while externally applying a weak magnetic field to it. The magnetic state of a ferromagnetic material can be switched between a uniformly magnetized state and a multiple magnetic domain structure by controlling the direction and intensity of the magnetic field applied to it and the intensity and pulse width of the current pulse. When an external magnetic field is applied, the possibility of occurrence of the reversal of the magnetic state upon application of the current pulse shows a hysteresis, and the reversal of the magnetic state can be controlled reliably. The intensity of the magnetic field to be applied may be as weak as a few gauss. Furthermore, by using such magnetic information recording elements, a magnetic information recording device (memory) that can achieve a high degree of integration can be produced.

Abstract: The magnetization state of a ferromagnetic material is controlled by applying a current pulse to it while externally applying a weak magnetic field to it. The magnetic state of a ferromagnetic material can be switched between a uniformly magnetized state and a multiple magnetic domain structure by controlling the direction and intensity of the magnetic field applied to it and the intensity and pulse width of the current pulse. When an external magnetic field is applied, the possibility of occurrence of the reversal of the magnetic state upon application of the current pulse shows a hysteresis, and the reversal of the magnetic state can be controlled reliably. The intensity of the magnetic field to be applied may be as weak as a few gauss. Furthermore, by using such magnetic information recording elements, a magnetic information recording device (memory) that can achieve a high degree of integration can be produced.

Abstract: A lattice shaped underlayer made of a ferroelectric material having a piezoelectric effect is formed on a substrate. On the crossing points of the underlayer magnetic films with a magnetoelastic effect are formed. By applying a voltage to the given column and row of the underlayer, the underlayer is stressed at the crossing point. Then the stress is transmitted to the magnetic film on the same crossing point making the magnetization reverse through the magnetoelastic effect, thus, carrying out writing to the MRAM.