Patents by Inventor Yoshifumi Mori
Yoshifumi Mori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240129669Abstract: A distribution system includes a device control circuit that receives a first sound signal and a second sound signal that are related to a performance sound to be distributed. The device control circuit also receives meta-data indicating a type of the first sound signal and a type of the second sound signal. The device control circuit also receives sound environment data indicating a sound characteristic of a sound appliance. Based on a combination of the type of the first sound signal and the sound characteristic or a combination of the type of the second sound signal and the sound characteristic, the device control circuit controls the first sound signal or the second sound signal to be output to the sound appliance.Type: ApplicationFiled: December 26, 2023Publication date: April 18, 2024Inventors: Masaru TANAKA, Yoshifumi MIZUNO, Takashi MORI, Akira MAEZAWA, Ryunosuke DAIDO, Kazunobu KONDO
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Patent number: 10428813Abstract: There is provided a state-monitory system of a moving apparatus which is capable of deducing an abnormality and cause of breakdown of the moving apparatus by Equationematical analysis only by measuring vibration of a casing or object to be monitored and which requires no large-scaled apparatus. An equivalent model of the moving apparatus 1 is formed, which is adapted to replace the vibration of a monitored object of the moving apparatus 1 with the vibration of a viscoelastic member such as an elastic spring etc. and which is adapted to be capable of outputting virtual vibration data having synthesized vibration equivalent to the vibration of the viscoelastic member, and the equivalent model is Equationematically analyzed, thereby estimating the abnormality and cause of breakdown of the moving apparatus 1 only by measuring vibration of the casing 8 or a monitored object.Type: GrantFiled: November 18, 2014Date of Patent: October 1, 2019Assignees: Tokuyama Corporation, Yamaguchi UniversityInventors: Yoshifumi Mori, Takashi Saito
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Publication number: 20160377076Abstract: There is provided a state-monitoring system of a moving apparatus which is capable of deducing m abnormality and cause of breakdown of the moving apparatus by Equationematical analysis only by measuring vibration of a casing or object to be monitored and which requires no large-sealed apparatus. An equivalent model of the moving apparatus 1 is formed, which is adapted to replace the vibration of a monitored object of the moving apparatus 1 with the vibration of a viscoelastic member such as an elastic spring etc. and which is adapted to be capable of outputting virtual vibration data having synthesized vibration equivalent to the vibration of the viscoelastic member, and the equivalent model is Equationematically analyzed, thereby estimating the abnormality and cause of breakdown of the moving apparatus 1 only by measuring vibration of the casing 8 or a monitored object.Type: ApplicationFiled: November 18, 2014Publication date: December 29, 2016Inventors: Yoshifumi MORI, Takashi SAITO
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Patent number: 7598358Abstract: A novel metal complex of a heterocyclic aromatic compound which shows a low activation energy, is stabilized structurally, is capable of modulation of the structure thereof, and capable of preferably functioning as a molecular device in technological fields. The metal complex of a heterocyclic aromatic compound comprises a transition metal (for example, silver ion) as a central atom, and basic ligands comprised of a 5-membered heterocyclic aromatic compound (for example, pyrrole rings), in which the position of the central atom can be changed by an internal factor such as transfer of an electric charge or by an external factor such as application of an electric field, a change in acidity of the surrounding environment, etc., whereby the number of atoms (or the number of electrons) relating to the coordination ability can be modulated, and, upon polymerization, the conformation can be modulated depending on the position of the central atom.Type: GrantFiled: March 6, 2006Date of Patent: October 6, 2009Assignee: Sony CorporationInventors: Eriko Matsui, Yuriko Kaino, Toshiyuki Kunikiyo, Tatsushiro Hirata, Yoshifumi Mori
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Publication number: 20080146237Abstract: In a radio network control method and device which avoid a congestion state by controlling a handover request when a transportable base station is moving, when location information is received from the transportable base station, enable/disable of a handover between the transportable base station and another base station is determined based on the location information and preset handover information per area. When handover enable is determined, information of a peripheral cell which allows a handover to the other base station is notified to a user equipment using a cell of the transportable base station based on in-use cell information per user equipment. Alternatively, information of a peripheral cell which allows a handover to the transportable base station is notified to a user equipment using a cell of a base station to which the transportable base station has moved.Type: ApplicationFiled: November 15, 2007Publication date: June 19, 2008Inventors: Takao Shikama, Fumikiyo Kikukawa, Kazuya Nishimura, Hidehiko Satoh, Yoshifumi Mori
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Patent number: 7365358Abstract: A method of fabricating a single crystal thin film includes forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grains are aligned in an approximately regular pattern; and subjecting the polycrystalline thin film to a second heat-treatment, thereby forming a single crystal thin film in which the polycrystalline grains are bonded to each other. In this method, either the first heat-treatment or the second heat-treatment may be performed by irradiation of laser beams, preferably, emitted from an excimer laser. A single crystal thin film formed by this fabrication method has a performance higher than a related art polycrystalline thin film and is suitable for fabricating a device having stable characteristics. The single crystal thin film can be fabricated for a short-time by using laser irradiation as the heat-treatments.Type: GrantFiled: April 21, 2004Date of Patent: April 29, 2008Assignee: Sony CorporationInventors: Junichi Sato, Setsuo Usui, Yasuhiro Sakamoto, Yoshifumi Mori, Hideharu Nakajima
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Publication number: 20060145151Abstract: A novel metal complex of a heterocyclic aromatic compound which shows a low activation energy, is stabilized structurally, is capable of modulation of the structure thereof, and capable of preferably functioning as a molecular device in technological fields. The metal complex of a heterocyclic aromatic compound comprises a transition metal (for example, silver ion) as a central atom, and basic ligands comprised of a 5-membered heterocyclic aromatic compound (for example, pyrrole rings), in which the position of the central atom can be changed by an internal factor such as transfer of an electric charge or by an external factor such as application of an electric field, a change in acidity of the surrounding environment, etc., whereby the number of atoms (or the number of electrons) relating to the coordination ability can be modulated, and, upon polymerization, the conformation can be modulated depending on the position of the central atom.Type: ApplicationFiled: March 6, 2006Publication date: July 6, 2006Inventors: Eriko Matsui, Yuriko Kaino, Toshiyuki Kunikiyo, Tatsushiro Hirata, Yoshifumi Mori
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Patent number: 7038025Abstract: A novel metal complex of a heterocyclic aromatic compound which shows a low activation energy, is stabilized structurally, is capable of modulation of the structure thereof, and capable of preferably functioning as a molecular device in technological fields. The metal complex of a heterocyclic aromatic compound comprises a transition metal (for example, silver ion) as a central atom, and basic ligands comprised of a 5-membered heterocyclic aromatic compound (for example, pyrrole rings), in which the position of the central atom can be changed by an internal factor such as transfer of an electric charge or by an external factor such as application of an electric field, a change in acidity of the surrounding environment, etc., whereby the number of atoms (or the number of electrons) relating to the coordination ability can be modulated, and, upon polymerization, the conformation can be modulated depending on the position of the central atom.Type: GrantFiled: December 18, 2002Date of Patent: May 2, 2006Assignee: Sony CorporationInventors: Eriko Matsui, Yuriko Kaino, Toshiyuki Kunikiyo, Yoshifumi Mori, Tatsushiro Hirata
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Publication number: 20050104125Abstract: A method of fabricating a single crystal thin film includes forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grains are aligned in an approximately regular pattern; and subjecting the polycrystalline thin film to a second heat-treatment, thereby forming a single crystal thin film in which the polycrystalline grains are bonded to each other. In this method, either the first heat-treatment or the second heat-treatment may be performed by irradiation of laser beams, preferably, emitted from an excimer laser. A single crystal thin film formed by this fabrication method has a performance higher than a related art polycrystalline thin film and is suitable for fabricating a device having stable characteristics. The single crystal thin film can be fabricated for a short-time by using laser irradiation as the heat-treatments.Type: ApplicationFiled: April 21, 2004Publication date: May 19, 2005Inventors: Junichi Sato, Setsuo Usui, Yasuhiro Sakamoto, Yoshifumi Mori, Hideharu Nakajima
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Publication number: 20040215001Abstract: A novel metal complex of a heterocyclic aromatic compound which shows a low activation energy, is stabilized structurally, is capable of modulation of the structure thereof, and capable of preferably functioning as a molecular device in technological fields. The metal complex of a heterocyclic aromatic compound comprises a transition metal (for example, silver ion) as a central atom, and basic ligands comprised of a 5-membered heterocyclic aromatic compound (for example, pyrrole rings), in which the position of the central atom can be changed by an internal factor such as transfer of an electric charge or by an external factor such as application of an electric field, a change in acidity of the surrounding environment, etc., whereby the number of atoms (or the number of electrons) relating to the coordination ability can be modulated, and, upon polymerization, the conformation can be modulated depending on the position of the central atom.Type: ApplicationFiled: August 25, 2003Publication date: October 28, 2004Inventors: Eriko Matsui, Yuriko Kaino, Toshiyuki Kunikiyo, Yoshifumi Mori
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Patent number: 6806505Abstract: There is provided a light emitting device and a process for producing the same in that the light emission efficiency is high, the range of selection of the material is broad, and a device array of a large area can be formed. On a substrate 11 comprising quartz glass, an n-type clad layer 12 comprising a non-single crystal body of n-type AlGaN, a light emitting layer 13 containing plural microcrystals 13a comprising ZnO, and a p-type clad layer 14 comprising a non-single crystal body of p-type BN are laminated in this order. Between the n-type clad layer 12 and the p-type clad layer 14, an insulating layer 15 is formed to fill the gap among the microcrystals 13a to prevent a leaking electric current. The insulating layer 15 is formed by oxidizing the surface of the n-type clad layer 12.Type: GrantFiled: June 26, 2002Date of Patent: October 19, 2004Assignee: Sony CorporationInventors: Shigeru Kojima, Katsuya Shirai, Yoshifumi Mori, Atsushi Toda
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Patent number: 6746942Abstract: A method of fabricating a single crystal thin film includes: forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grains are aligned in an approximately regular pattern; and subjecting the polycrystalline thin film to a second heat-treatment, thereby forming a single crystal thin film in which the polycrystalline grains are bonded to each other. In this method, either the first heat-treatment or the second heat-treatment may be performed by irradiation of laser beams, preferably, emitted from an excimer laser. A single crystal thin film formed by this fabrication method has a performance higher than a related art polycrystalline thin film and is suitable for fabricating a device having stable characteristics. The single crystal thin film can be fabricated for a short-time by using laser irradiation as the heat-treatments.Type: GrantFiled: September 5, 2001Date of Patent: June 8, 2004Assignee: Sony CorporationInventors: Junichi Sato, Setsuo Usui, Yasuhiro Sakamoto, Yoshifumi Mori, Hideharu Nakajima
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Publication number: 20040032786Abstract: A fractal structure is formed to include at least one heterojunction formed by two regions different in fractal dimension characterizing the self similarity from each other. Especially in a stellar fractal structure, the heterojunction is formed by forming a region (dendritic region) with a lower fractal dimension around a core (somatic region) with a higher fractal dimension. These two regions forming the heterojunction are different in phase from each other. For example, they are a combination of a ferromagnetic phase and a paramagnetic phase, or a combination of a metal phase and a Mott insulative phase. The fractal structure may be used to realize a functional material or a functional device.Type: ApplicationFiled: July 23, 2003Publication date: February 19, 2004Inventors: Ryuichi Ugajin, Hajime Matsumura, Yoshifumi Mori
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Patent number: 6639354Abstract: An n-type cladding layer formed of a non-single crystal body of n-type AlGaN, a light emitting layer containing a plurality of micro-crystals made from ZnO, and a p-type cladding layer formed of a non-single crystal body of p-type BN are sequentially stacked on a substrate made from quartz glass. An insulating layer is formed between the n-type cladding layer and the p-type cladding layer in such a manner as to bury spaces between the micro-crystals, to thereby prevent occurrence of leakage current. The insulating layer is formed by oxidizing the surface of the n-type cladding layer. Since the light emitting layer contains the plurality of micro-crystals improved in crystallinity, it is possible to enhance the emission efficiency, to extend the selection range of each of materials for forming the light emitting layer, n-type cladding layer, p-type cladding layer, and substrate, and to form a device array on a common substrate having a large area.Type: GrantFiled: July 21, 2000Date of Patent: October 28, 2003Assignee: Sony CorporationInventors: Shigeru Kojima, Katsuya Shirai, Yoshifumi Mori, Atsushi Toda
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Patent number: 6593215Abstract: Disclosed are a method manufacturing a crystalline semiconductor material capable of improving the crystallinity and a method of manufacturing a semiconductor device using the same. An amorphous film made of silicon (Si) is formed on a substrate with a protective film inbetween. Then, a short-wavelength energy beam is irradiated to the amorphous film as a first heat treatment, thereby forming a crystalline film made of quasi-single crystal. Subsequently, another short-wavelength energy beam is irradiated to the crystalline film as a second heat treatment in order to selectively fuse and re-crystallize only the grain boundary of the crystalline film and the neighboring region. As a result, a crystalline film with excellent crystallinity can be obtained.Type: GrantFiled: August 21, 2001Date of Patent: July 15, 2003Assignee: Sony CorporationInventors: Toru Hiraga, Takashi Noguchi, Setsuo Usui, Yoshifumi Mori
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Patent number: 6584234Abstract: An image processing apparatus capable of extracting widely viewed features of an entire image and speedily performing image processing, and a method and an information recording medium for such processing. Image data of an original image is obtained by imaging the entire original image with an image pickup unit at a time. An amplitude distribution of a signal is obtained from the image data by fast Fourier transform performed by a fast Fourier transform section of a signal processing unit. An amplitude replacement section replaces the amplitude distribution with a predetermined function using the distance from a center of a frequency plane as a parameter. An inverse fast Fourier transform section forms an image corresponding to the original image by inverse fast Fourier transform from a phase distribution of points obtained by the fast Fourier transform and from an amplitude distribution obtained by the above-described replacement.Type: GrantFiled: October 15, 2001Date of Patent: June 24, 2003Assignee: Sony CorporationInventors: Shoji Kanamaru, Yoshihiko Kuroki, Yoshifumi Mori, Ryuichi Ugajin, Hitoshi Kimura
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Publication number: 20020163005Abstract: There is provided a light emitting device and a process for producing the same in that the light emission efficiency is high, the range of selection of the material is broad, and a device array of a large area can be formed. On a substrate 11 comprising quartz glass, an n-type clad layer 12 comprising a non-single crystal body of n-type AlGaN, a light emitting layer 13 containing plural microcrystals 13a comprising ZnO, and a p-type clad layer 14 comprising a non-single crystal body of p-type BN are laminated in this order. Between the n-type clad layer 12 and the p-type clad layer 14, an insulating layer 15 is formed to fill the gap among the microcrystals 13a to prevent a leaking electric current. The insulating layer 15 is formed by oxidizing the surface of the n-type clad layer 12.Type: ApplicationFiled: June 26, 2002Publication date: November 7, 2002Inventors: Shigeru Kojima, Katsuya Shirai, Yoshifumi Mori, Atsushi Toda
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Publication number: 20020160544Abstract: There is provided a light emitting device and a process for producing the same in that the light emission efficiency is high, the range of selection of the material is broad, and a device array of a large area can be formed. On a substrate 11 comprising quartz glass, an n-type clad layer 12 comprising a non-single crystal body of n-type AlGaN, a light emitting layer 13 containing plural microcrystals 13a comprising ZnO, and a p-type clad layer 14 comprising a non-single crystal body of p-type BN are laminated in this order. Between the n-type clad layer 12 and the p-type clad layer 14, an insulating layer 15 is formed to fill the gap among the microcrystals 13a to prevent a leaking electric current. The insulating layer 15 is formed by oxidizing the surface of the n-type clad layer 12.Type: ApplicationFiled: June 26, 2002Publication date: October 31, 2002Inventors: Shigeru Kojima, Katsuya Shirai, Yoshifumi Mori, Atsushi Toda
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Patent number: 6438298Abstract: An optical device includes a plurality of first optical waveguides (or optical fibers) arranged in the horizontal direction; a plurality of second optical waveguides (or optical fibers) arranged on the same plane as the plane on which the first optical waveguides (or optical fibers) are arranged, the second optical waveguides (or optical fibers) being perpendicular or nearly perpendicular to the first optical waveguides (or optical fibers); and elements to be excited by light rays waveguided in the first and second optical waveguides(or optical fibers), the elements being arranged at crossing portions at which the first and second optical waveguides (or optical fibers) cross each other.Type: GrantFiled: July 14, 2000Date of Patent: August 20, 2002Assignee: Sony CorporationInventors: Eriko Matsui, Akira Ishibashi, Yoshifumi Mori
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Publication number: 20020098695Abstract: Disclosed are a method of manufacturing a crystalline semiconductor material capable of improving the crystallinity and a method of manufacturing a semiconductor device using the same. An amorphous film made of silicon (Si) is formed on a substrate with a protective film inbetween. Then, a short-wavelength energy beam is irradiated to the amorphous film as a first heat treatment, thereby forming a crystalline film made of quasi-single crystal. Subsequently, another short-wavelength energy beam is irradiated to the crystalline film as a second heat treatment in order to selectively fuse and re-crystallize only the grain boundary of the crystalline film and the neighboring region. As a result, a crystalline film with excellent crystallinity can be obtained.Type: ApplicationFiled: August 21, 2001Publication date: July 25, 2002Inventors: Toru Hiraga, Takashi Noguchi, Setsuo Usui, Yoshifumi Mori