Abstract: A semiconductor device includes a substrate, a spacer, and a first member. The spacer is disposed on the substrate, and has (i) a first surface facing the substrate, (ii) a second surface opposite to the first surface, and (iii) a third surface, at least part of the third surface forming an angle of less than 90 degrees with respect to the second surface. The first member is disposed on the substrate and, when viewed in a first direction from the substrate toward the spacer, at least partly overlaps the spacer. The first member is not in contact with the spacer.

Abstract: A nuclear fusion system comprises: a muon generation unit to generate negative muons including electron and positron accelerators for generating electron and positron beams; a gas supply unit to supply to circulate gaseous deuterium or gaseous deuterium-tritium mixture as raw material gas; a Laval nozzle to accelerate the raw material gas to supersonic velocity; and a shock wave cone connected to the Laval nozzle to introduce the raw material gas accelerated to supersonic velocity to generate an oblique shock wave, the raw material gas accelerated to supersonic velocity being introduced into the shock wave cone to generate the oblique shock wave, the oblique shock wave being decelerated to create a high-density gas target in an in-flight manner, the muons generated as a result of causing electrons and positrons to collide with each other being introduced into the high-density gas target thereby to cause a muon-catalyzed nuclear fusion reaction to occur.

Abstract: A semiconductor device according to the present embodiment includes a circuit board comprising a plurality of electrodes provided on a first surface, a first resin layer provided on the first surface around the electrodes, and a second resin layer provided on the first resin layer. A first semiconductor chip is connected to a first one of the electrodes. A second semiconductor chip is provided above the first semiconductor chip, being larger than the first semiconductor chip, and is connected to a second one of the electrodes via a metal wire. A third resin layer is provided between the first semiconductor chip and the second semiconductor chip and between the second resin layer and the second semiconductor chip, and covers the first semiconductor chip.

Abstract: A semiconductor device according to the present embodiment includes a circuit board comprising a plurality of electrodes provided on a first surface, a first resin layer provided on the first surface around the electrodes, and a second resin layer provided on the first resin layer. A first semiconductor chip is connected to a first one of the electrodes. A second semiconductor chip is provided above the first semiconductor chip, being larger than the first semiconductor chip, and is connected to a second one of the electrodes via a metal wire. A third resin layer is provided between the first semiconductor chip and the second semiconductor chip and between the second resin layer and the second semiconductor chip, and covers the first semiconductor chip.