Abstract: An antenna device includes an antenna, a first base member, a second base member, a support, and a first fixing member. The antenna, the first base member, the second base member, and the support are arrayed in this order. The first base member and the second base member are spaced apart from each other and coupled via the first fixing member.

Abstract: An antenna device includes a first substrate and an antenna. The first substrate has a through hole penetrating in the thickness direction. The antenna includes a second substrate and an element portion including a circuit unit on the second substrate. The second substrate is located in the through hole with a gap from the first substrate.

Abstract: An antenna device includes an antenna portion, a connecting portion, and a support. The connecting portion connects the antenna portion and the support. The support is located above the antenna portion and includes a channel extending from an inflow opening located opposite to the antenna portion to an outflow opening located farther from the antenna portion than the inflow opening.

Abstract: A wiring board includes a metal substrate, an insulating resin layer positioned on the metal substrate, the insulating resin layer including: a first surface facing the metal substrate, a second surface positioned opposite to the first surface, third surfaces positioned between the first surface and the second surface, first ridge portions where the first surface meets the third surfaces, second ridge portions where the second surface meets the third surfaces; and a first closed pore group closer to the first ridge portions than to the second ridge portions. The first closed pore group includes a plurality of closed pores densely contained.

Abstract: A substrate support body includes a support plate, an enclosure member, and a bonding material. The enclosure member is arranged on the support plate. The bonding material is arranged on an entire surface of an inner region of the enclosure member and is bonded to the support plate.

Abstract: A light emitting element mounting package includes a substrate and an insulating layer, the insulating layer is provided on a first surface of the substrate and has a through hole that penetrates in a direction perpendicular to the first surface, and a wall surface facing the through hole has a stepped portion, in which a diameter of the through hole is small on the side closer to the substrate and is large on the side far from the substrate.

Abstract: A light emitting element mounting package includes a substrate, an insulating layer, and a metal layer. The insulating layer includes a through hole penetrating in a thickness direction and is provided on the substrate. The metal layer is disposed on the substrate in at least the through hole, and includes a protruding portion extending from the substrate along an inner wall of the through hole. The protruding portion has the shape of a connected body in which metal particles are connected together. The inner wall of the insulating layer includes, closer to the substrate, an inclined surface where the through hole becomes wider, and the protruding portion contacts the inclined surface.

Abstract: A method for producing a compound semiconductor layer comprises dissolving a metal feedstock comprising at least one of a group I-B element and a group III-B element, in a metal state, in a mixed solvent comprising an organic compound containing a chalcogen element and a Lewis base organic compound to produce a solution for forming a semiconductor; forming a coat using the solution for forming a semiconductor; and heat-treating the coat.

Abstract: A photoelectric converter is disclosed. The photoelectric converter includes an electrode layer and a semiconductor layer. The semiconductor layer is on the electrode layer. The semiconductor layer contains a chalcopyrite compound semiconductor. The semiconductor layer comprises a plurality of sub-layers. The plurality of sub-layers comprises a first sub-layer. The first sub-layer is located closest to the electrode layer. The first sub-layer has a first thickness smaller than an average thickness of the rest of the plurality of sub-layers.

Abstract: The production method of a photoelectric conversion device comprises adding a chalcogenide powder of a group-IIIB element to an organic solvent including a single source precursor containing a group-IB element, a group-IIIB element, and a chalcogen element to prepare a solution for forming a semiconductor, and forming a semiconductor containing a group-I-III-VI compound by use of the solution for forming a semiconductor.

Abstract: A method for producing a compound semiconductor layer comprises dissolving a metal feedstock comprising at least one of a group I-B element and a group III-B element, in a metal state, in a mixed solvent comprising an organic compound containing a chalcogen element and a Lewis base organic compound to produce a solution for forming a semiconductor; forming a coat using the solution for forming a semiconductor; and heat-treating the coat.

Abstract: The production method of a photoelectric conversion device comprises the steps of adding a chalcogenide powder of a group-IIIB element to an organic solvent including a single source precursor containing a group-IB element, a group-IIIB element, and a chalcogen element to prepare a solution for forming a semiconductor, and forming a semiconductor containing a group-I-III-VI compound by use of the solution for forming a semiconductor.