Abstract: A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SiC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.

Abstract: A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SiC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.

Abstract: A SiC epitaxial wafer obtained by forming a SiC epitaxial layer on a 4H—SiC single-crystal substrate that is tilted at an off-angle of 0.4° to 5°, wherein linear density of step bunchings, which are connected to shallow pits which are due to screw dislocation in the SiC epitaxial wafer, is 5 mm?1 or less.

Abstract: Provided is a silicon carbide epitaxial wafer, the entire surface of which is free of step bunching. Also provided is a method for manufacturing said silicon carbide epitaxial wafer. The provided method for manufacturing a silicon carbide semiconductor device includes: a step wherein a 4H—SiC single-crystal substrate having an off-axis angle of 5° or less is polished until the lattice disorder layer on the surface of the substrate is 3 nm or less; a step wherein, in a hydrogen atmosphere, the polished substrate is brought to a temperature between 1400° C. and 1600° C. and the surface of the substrate is cleaned; a step wherein silicon carbide is epitaxially grown on the surface of the cleaned substrate as the amounts of SiH4 gas and C3H8 gas considered necessary for epitaxially growing silicon carbide are supplied simultaneously at a carbon-to-silicon concentration ratio between 0.7 and 1.

Abstract: A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SIC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer.

Abstract: Provided is a silicon carbide epitaxial wafer, the entire surface of which is free of step bunching. Also provided is a method for manufacturing said silicon carbide epitaxial wafer. The provided method for manufacturing a silicon carbide semiconductor device includes: a step wherein a 4H—SiC single-crystal substrate having an off-axis angle of 5° or less is polished until the lattice disorder layer on the surface of the substrate is 3 nm or less; a step wherein, in a hydrogen atmosphere, the polished substrate is brought to a temperature between 1400° C. and 1600° C. and the surface of the substrate is cleaned; a step wherein silicon carbide is epitaxially grown on the surface of the cleaned substrate as the amounts of SiH4 gas and C3H8 gas considered necessary for epitaxially growing silicon carbide are supplied simultaneously at a carbon-to-silicon concentration ratio between 0.7 and 1.

Abstract: A splicing tape feeding device is disclosed which is adapted for supplying a splicing tape for joining a magnetic tape to a leader tape. The splicing tape feeding device includes a stationary base member and a movable member displaceable relative to the base member. The base member and the movable member have splicing tape transport paths with a lateral width not less than that of the splicing tape. Parallel flanges are formed on opposite sides of each of the tape transport paths and prevent a lateral displacement of the splicing tape. Engageable mating portions are formed on the base member and the movable member to eliminate a distance in the feeding direction of the splicing tape between the base member and the movable member.

Abstract: A tape winding apparatus, in which a tape drawn from a pancake reel and loaded onto a reel base is wound and accommodated within a cassette, includes a pancake reel exchanging apparatus, wherein at least two pancake reels coaxially disposed with respect to the axial direction of the reel base are loaded onto the reel base. Therefore, a plurality of pancake reels can be loaded onto this tape winding apparatus and the tape winding apparatus can be made comparatively small in size.

Abstract: A length of tape is drawn off a reel, passed over the cutting/connecting section of a splicer, passed through a temporary storage vessel and looped back so as to pass over the cutting/connecting section again. Tape clamps hold the two layers of tape on the cutting/connecting section which are then cut. One of the tape clamps is withdrawn while an applicator applies a piece of adhesive tape in a manner which splices a continuous loop of tape. To remove a superfluous portion of the tape from the continuous loop, the loop is moved to a position wherein one end of the superfluous length is located over the cutting/connecting section. The tape is clamped and cut. One of the two tape clamps then lifts the now open end of the loop clear and the superfluous portion is spliced to the tape on a supply reel. The reel is rotated in manner which winds the superfluous length thereonto until the other end of the superfluous length is drawn to the cutting/connecting section.

Abstract: A length of tape is drawn off a reel, passed over the cutting/connecting section of a splicer, passed through a temporary storage vessel and looped back so as to pass over the cutting/connecting section again. The free end is connected to a take up reel. Tape clamps bring the overlapping layers of tape down onto the cutting/connecting section and are then cut. One of the tape clamps is withdrawn while an applicator applies a piece of adheseive tape in a manner which splices a continuous loop of tape.