Patents by Inventor Yoshihiko Tani
Yoshihiko Tani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11509117Abstract: A light emitting element (semiconductor laser element) includes a multilayer structure in which a substrate, semiconductor layers to, an insulating layer, and a metal layer are stacked in order. The light emitting element includes a plurality of light emitting portions each of which emits a laser beam. The plurality of light emitting portions each include a ridge (ridge waveguide). The distance from a specific position in an active region in at least one of the light emitting portions to an inner surface of the metal layer is different from that in another of the light emitting portions.Type: GrantFiled: January 8, 2020Date of Patent: November 22, 2022Assignee: SHARP KABUSHIKI KAISHAInventors: Alex Yudin, Yoshimi Tanimoto, Yoshihiko Tani, Valerie Berryman-Bousquet
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Publication number: 20220158414Abstract: A laser element comprises a substrate; and an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer, and an electrode layer successively laminated on one principal surface of the substrate, wherein the p-type semiconductor layer includes a ridge raised in a stripe shape, the ridge including a contact layer formed in a layer including a principal surface on a side opposite to the substrate, a stepped portion defined by recessing the contact layer is formed in at least part of a boundary between a lateral surface among surfaces defining outer edges of the ridge, the lateral surface extending along a lengthwise direction of the ridge, and the principal surface of the ridge, and the electrode layer covers the principal surface of the ridge and the stepped portion.Type: ApplicationFiled: November 16, 2021Publication date: May 19, 2022Inventors: AKINORI NOGUCHI, YOSHIHIKO TANI, Hiroshi NAKATSU
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Patent number: 11133651Abstract: A nitride semiconductor laser device at least includes a ridge part disposed on a second-conductivity-type semiconductor layer, a conductive oxide layer covering the upper surface of the ridge part and portions of opposite side surfaces of the ridge part, a dielectric layer covering a portion of the conductive oxide layer, and a first metal layer covering the conductive oxide layer and the dielectric layer, wherein a portion of the conductive oxide layer disposed on the upper surface of the ridge part is exposed through the dielectric layer and covered with the first metal layer.Type: GrantFiled: November 26, 2019Date of Patent: September 28, 2021Assignee: SHARP KABUSHIKI KAISHAInventors: Akinori Noguchi, Yoshihiko Tani, Yoshimi Tanimoto, Yuhzoh Tsuda
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Patent number: 11128105Abstract: In a semiconductor laser device, a semiconductor layer includes a first groove formed on both sides of a ridge, a pair of second recesses facing each other and between which the ridge is interposed on a side of a light emitting surface, and a pair of third grooves in parallel to the first groove from the light emitting surface and interposing the ridge therebetween.Type: GrantFiled: January 22, 2020Date of Patent: September 21, 2021Assignee: SHARP KABUSHIKI KAISHAInventors: Teruyoshi Takakura, Yoshimi Tanimoto, Yoshihiko Tani, Yuhzoh Tsuda
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Publication number: 20210194211Abstract: A semiconductor laser device comprises a substrate; a semiconductor layer of a first conductivity type on the substrate; an active layer on the semiconductor layer of the first conductivity type; a semiconductor layer of a second conductivity type on the active layer; a ridge portion in part of the semiconductor layer of the second conductivity type; a dielectric layer covering a region of the semiconductor layer of the second conductivity type other than the ridge portion; a metal layer on the dielectric layer, the metal layer being electrically coupled to the ridge portion; and a conductive member electrically connecting the metal layer to at least the region of the semiconductor layer of the second conductivity type other than the ridge portion.Type: ApplicationFiled: December 15, 2020Publication date: June 24, 2021Inventors: AKINORI NOGUCHI, YOSHIHIKO TANI, YUHZOH TSUDA
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Publication number: 20210184428Abstract: A semiconductor laser element configured to emit laser light, the semiconductor laser element comprises a substrate; and a semiconductor layer provided on the substrate, wherein the semiconductor layer includes a waveguide extending in a predetermined direction and configured to emit the laser light from one end face of the waveguide, the substrate includes a plurality of cavity sections intersecting the predetermined direction and extending, the plurality of cavity sections are provided in the substrate such that at least parts of at least two cavity sections of the plurality of cavity sections overlap with each other along the predetermined direction, and a length of each of the plurality of cavity sections in a direction perpendicular to the predetermined direction is shorter than a length of the semiconductor laser element in the perpendicular direction.Type: ApplicationFiled: December 11, 2020Publication date: June 17, 2021Inventors: AKINORI NOGUCHI, YOSHIHIKO TANI, YUHZOH TSUDA
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Patent number: 10790409Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.Type: GrantFiled: August 13, 2018Date of Patent: September 29, 2020Assignee: SHARP KABUSHIKI KAISHAInventors: Yoshihiko Tani, Tetsuya Hanamoto, Masanori Watanabe, Akihiro Kurisu, Katsuji Iguchi, Hiroyuki Kashihara, Tomoya Inoue, Toshiaki Asai, Hirotaka Watanabe
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Publication number: 20200251885Abstract: In a semiconductor laser device, a semiconductor layer includes a first groove formed on both sides of a ridge, a pair of second recesses facing each other and between which the ridge is interposed on a side of a light emitting surface, and a pair of third grooves in parallel to the first groove from the light emitting surface and interposing the ridge therebetween.Type: ApplicationFiled: January 22, 2020Publication date: August 6, 2020Inventors: TERUYOSHI TAKAKURA, YOSHIMI TANIMOTO, YOSHIHIKO TANI, YUHZOH TSUDA
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Publication number: 20200244041Abstract: A nitride semiconductor laser device at least includes a ridge part disposed on a second-conductivity-type semiconductor layer, a conductive oxide layer covering the upper surface of the ridge part and portions of opposite side surfaces of the ridge part, a dielectric layer covering a portion of the conductive oxide layer, and a first metal layer covering the conductive oxide layer and the dielectric layer, wherein a portion of the conductive oxide layer disposed on the upper surface of the ridge part is exposed through the dielectric layer and covered with the first metal layer.Type: ApplicationFiled: November 26, 2019Publication date: July 30, 2020Inventors: Akinori Noguchi, Yoshihiko Tani, Yoshimi Tanimoto, Yuhzoh Tsuda
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Publication number: 20200227892Abstract: A light emitting element (semiconductor laser element) includes a multilayer structure in which a substrate, semiconductor layers to, an insulating layer, and a metal layer are stacked in order. The light emitting element includes a plurality of light emitting portions each of which emits a laser beam. The plurality of light emitting portions each include a ridge (ridge waveguide). The distance from a specific position in an active region in at least one of the light emitting portions to an inner surface of the metal layer is different from that in another of the light emitting portions.Type: ApplicationFiled: January 8, 2020Publication date: July 16, 2020Inventors: ALEX YUDIN, YOSHIMI TANIMOTO, YOSHIHIKO TANI, VALERIE BERRYMAN-BOUSQUET
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Publication number: 20190067912Abstract: A group III nitride based laser light emitting device includes an n-side group III nitride based semiconductor region, a p-side group III nitride based semiconductor region, and a group III nitride based active region between the p-side group III nitride based semiconductor region and n-side group III nitride based semiconductor region. The group III nitride based active region includes first and second quantum well layers and a barrier layer between the first and second quantum well layers, the respective compositions of the first and second quantum well layers comprising different respective amounts of indium. The first quantum well is closer to the n-side group III nitride based semiconductor region than the second quantum well, the second quantum well is closer to the p-side group III nitride based semiconductor region than the first quantum well, and the first quantum well has a larger band gap than the second quantum well.Type: ApplicationFiled: August 22, 2017Publication date: February 28, 2019Inventors: Alex YUDIN, Yoshihiko TANI, Valerie BERRYMAN-BOUSQUET, Shigetoshi ITO
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Patent number: 10218152Abstract: A group III nitride based laser light emitting device includes an n-side group III nitride based semiconductor region, a p-side group III nitride based semiconductor region, and a group III nitride based active region between the p-side group III nitride based semiconductor region and n-side group III nitride based semiconductor region. The group III nitride based active region includes first and second quantum well layers and a barrier layer between the first and second quantum well layers, the respective compositions of the first and second quantum well layers comprising different respective amounts of indium. The first quantum well is closer to the n-side group III nitride based semiconductor region than the second quantum well, the second quantum well is closer to the p-side group III nitride based semiconductor region than the first quantum well, and the first quantum well has a larger band gap than the second quantum well.Type: GrantFiled: August 22, 2017Date of Patent: February 26, 2019Assignee: Sharp Kabushiki KaishaInventors: Alex Yudin, Yoshihiko Tani, Valerie Berryman-Bousquet, Shigetoshi Ito
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Publication number: 20190006555Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.Type: ApplicationFiled: August 13, 2018Publication date: January 3, 2019Inventors: Yoshihiko TANI, Tetsuya HANAMOTO, Masanori WATANABE, Akihiro KURISU, Katsuji IGUCHI, Hiroyuki KASHIHARA, Tomoya INOUE, Toshiaki ASAI, Hirotaka WATANABE
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Patent number: 10084111Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.Type: GrantFiled: August 31, 2015Date of Patent: September 25, 2018Assignee: Sharp Kabushiki KaishaInventors: Yoshihiko Tani, Tetsuya Hanamoto, Masanori Watanabe, Akihiro Kurisu, Katsuji Iguchi, Hiroyuki Kashihara, Tomoya Inoue, Toshiaki Asai, Hirotaka Watanabe
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Publication number: 20170317235Abstract: A nitride semiconductor light-emitting element at least includes an underlayer, an n-type contact layer, a light-emitting layer, and a p-type nitride semiconductor layer successively disposed on a substrate. The film thickness ratio R, the ratio of the thickness of the n-type contact layer to the thickness of the underlayer, is 0.8 or less. The number density of V-pits in the surface of the light-emitting layer located on the p-type nitride semiconductor layer side is 1.5×108/cm2 or less. This can provide a nitride semiconductor light-emitting element that can realize improvements in the light emission efficiency at the actual operating temperature and the temperature characteristic and an improvement in the ESD resistance without causing conflict.Type: ApplicationFiled: September 9, 2015Publication date: November 2, 2017Inventors: Katsuji IGUCHI, Yoshihiko TANI, Kentaro NONAKA
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Publication number: 20170294554Abstract: A nitride semiconductor light-emitting element includes at least an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer. A multilayer body is provided between the n-type nitride semiconductor layer and the light-emitting layer, having at least one stack of first and second semiconductor layers. The second semiconductor layer has a greater band-gap energy than the first semiconductor layer. The first and second semiconductor layers each have a thickness of more than 10 nm and 30 nm or less. In applications in which luminous efficiency at room temperature is a high priority, the first semiconductor layer has a thickness of more than 10 nm and 30 nm or less, the second semiconductor layer has a thickness of more than 10 nm and 40 nm or less, and the light-emitting layer has V-shaped recesses in cross-sectional view.Type: ApplicationFiled: August 31, 2015Publication date: October 12, 2017Applicant: Sharp Kabushiki KaishaInventors: Yoshihiko TANI, Tetsuya HANAMOTO, Masanori WATANABE, Akihiro KURISU, Katsuji IGUCHI, Hiroyuki KASHIHARA, Tomoya INOUE, Toshiaki ASAI, Hirotaka WATANABE
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Patent number: 9620671Abstract: A nitride semiconductor light emitting element is provided with: a substrate; a buffer layer that is provided on the substrate; a base layer that is provided on the buffer layer; an n-side nitride semiconductor layer that is provided on the base layer; an MQW light emitting layer that is provided on the n-side nitride semiconductor layer; and a p-side nitride semiconductor layer that is provided on the MQW light emitting layer. An x-ray rocking curve half-value width ? (004) with respect to a (004) plane, i.e., the crystal plane of the nitride semiconductor, is 40 arcsec or less, or the x-ray rocking curve half-value width ? (102) with respect to a (102) plane is 130 arcsec or less, and the rate P (80)/P (25) between light output P (25) at 25° C. and light output P (80) at 80° C. with a same operating current is 95% or more.Type: GrantFiled: May 15, 2013Date of Patent: April 11, 2017Assignee: SHARP KABUSHIKI KAISHAInventors: Hiroshi Nakatsu, Tomoya Inoue, Kentaro Nonaka, Toshiaki Asai, Tadashi Takeoka, Yoshihiko Tani
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Patent number: 9318645Abstract: A nitride semiconductor light-emitting element includes a second light-emitting layer, a third barrier layer, and a first light-emitting layer from a side close to a p-type nitride semiconductor layer. The first light-emitting layer includes a plurality of first quantum well layers and a first barrier layer provided between the plurality of first quantum well layers. The second light-emitting layer includes a plurality of second quantum well layers and a second barrier layer provided between the plurality of second quantum well layers. The second quantum well layers include a multiple quantum well light-emitting layer thicker than the first quantum well layers.Type: GrantFiled: October 16, 2013Date of Patent: April 19, 2016Assignee: SHARP KABUSHIKI KAISHAInventors: Yoshihiko Tani, Tadashi Takeoka, Akihiro Kurisu, Tetsuya Hanamoto, Mathieu Senes
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Publication number: 20150171263Abstract: A nitride semiconductor light emitting element is provided with: a substrate; a buffer layer that is provided on the substrate; a base layer that is provided on the buffer layer; an n-side nitride semiconductor layer that is provided on the base layer; an MQW light emitting layer that is provided on the n-side nitride semiconductor layer; and a p-side nitride semiconductor layer that is provided on the MQW light emitting layer. An x-ray rocking curve half-value width ? (004) with respect to a (004) plane, i.e., the crystal plane of the nitride semiconductor, is 40 arcsec or less, or the x-ray rocking curve half-value width ? (102) with respect to a (102) plane is 130 arcsec or less, and the rate P (80)/P (25) between light output P (25) at 25° C. and light output P (80) at 80° C. with a same operating current is 95% or more.Type: ApplicationFiled: May 15, 2013Publication date: June 18, 2015Applicant: Sharp Kabushiki KaishaInventors: Hiroshi Nakatsu, Tomoya Inoue, Kentaro Nonaka, Toshiaki Asai, Tadashi Takeoka, Yoshihiko Tani
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Publication number: 20150076447Abstract: A nitride semiconductor light-emitting element includes a second light-emitting layer, a third barrier layer, and a first light-emitting layer from a side close to a p-type nitride semiconductor layer. The first light-emitting layer includes a plurality of first quantum well layers and a first barrier layer provided between the plurality of first quantum well layers. The second light-emitting layer includes a plurality of second quantum well layers and a second barrier layer provided between the plurality of second quantum well layers. The second quantum well layers include a multiple quantum well light-emitting layer thicker than the first quantum well layers.Type: ApplicationFiled: October 16, 2013Publication date: March 19, 2015Inventors: Yoshihiko Tani, Tadashi Takeoka, Akihiro Kurisu, Tetsuya Hanamoto, Mathieu Senes