Abstract: Provided is a method for easily manufacturing large volumes of a metallic glass nanowire with an extremely small diameter. This metallic glass nanowire manufacturing method is characterized in that a melted metallic glass or a master alloy thereof is gas-atomized in a supercooled state.

Abstract: An arc melting furnace apparatus is provided which reduces an operation burden on a worker and shortens working hours. An arc melting furnace apparatus 1 includes a housing 2 having formed therein a melting chamber 2a, a hearth 4 provided within the melting chamber 2a and having a recessed portion 4a, and a heating mechanism 10 for heating and melting a metal material supplied into the recessed portion 4 to generate an alloy ingot. The apparatus comprises a turning member 23 rotatably supported on a supporting member 21 standing within the melting chamber 2a, a perimeter edge of the turning member 23 rotating and moving along the inner surface of the recessed portion 4a to lift the alloy ingot generated in the recessed portion 4a above the hearth 4 and turn it over, and a resilient turn-over assisting member 24 provided above an upper end of the recessed portion 4a.

Abstract: A high reading performance is secured in an optical pickup even if magnets are miniaturized. In an optical pickup, around a lens holder which holds a lens, track coils are wound from a range of a flange of the lens to the outside in a diameter direction. The track coils become close to an optical axis of the lens and close to the center of a magnetic field formed in a unipolar face-to-face type of magnetic circuit, with the result that it is possible to displace so that the optical axis is hard to be tilted and secure a high reading accuracy. By forming a wound line shape of a focus coil and the track coils into a hexagon or the like, it is possible to make curving magnetic fluxes generated around magnetic pole surfaces hard have an affect in the unipolar face-to-face type of magnetic circuit.

Abstract: A semiconductor device includes: a connecting body including a connecting electrode; and at least one semiconductor chip stacked on the connecting body, the semiconductor chip including: a substrate; and a trans-substrate conductive plug that penetrates the substrate, the trans-substrate conductive plug having a first terminal that is provided on an active surface side of the substrate; and a second terminal that is provided on a back surface side that is opposite the active surface side, an outer shape of the first terminal being formed larger than an outer shape of the second terminal, wherein the second terminal of the semiconductor chip is electrically connected to a connecting electrode of the connecting body via a brazing material.

Abstract: An amorphous alloy having a composition represented by the general formula: XaMbAlc (wherein X represents at least one element selected from the group consisting of Zr and Hf, M represents at least one element selected from the group consisting of Ni, Nb, Cu, Fe, Co, and Mn, and a, b, and c represent such atomic percentages as respectively satisfy 25?a?85, 5?b?70, and 0<c?35) and containing an amorphous phase in the range of 50-100% in a volumetric ratio contains hydrogen incorporated therein. Preferably the hydrogen is present in the amorphous alloy in an amount of 0.005-10% of the amorphous alloy in a weight ratio.

Abstract: A semiconductor device includes: a connecting body including a connecting electrode; and at least one semiconductor chip stacked on the connecting body, the semiconductor chip including: a substrate; and a trans-substrate conductive plug that penetrates the substrate, the trans-substrate conductive plug having a first terminal that is provided on an active surface side of the substrate; and a second terminal that is provided on a back surface side that is opposite the active surface side, an outer shape of the first terminal being formed larger than an outer shape of the second terminal, wherein the second terminal of the semiconductor chip is electrically connected to a connecting electrode of the connecting body via a brazing material.

Abstract: A semiconductor device includes a semiconductor substrate with a through hole formed therein, a first insulating film formed inside the through hole, and an electrode formed on an inner side of the first insulating film inside the through hole. The first insulating film at the rear surface side of the semiconductor substrate protrudes beyond the rear surface, and the electrode protrudes on both the active surface side and the rear surface side of the semiconductor substrate. An outer diameter of a protruding portion on the active surface side is larger than an outer diameter of the first insulating film inside the through hole, and a protruding portion on the rear surface side protrudes further beyond the first insulating film to have a side surface thereof exposed. The semiconductor device has improved connectivity and connection strength and, in particular, has excellent resistance to shearing force when used in three-dimensional packaging technology.

Abstract: An object of the invention is to secure a high reading performance in an optical pickup even if magnets are miniaturized. In an optical pickup, around a lens holder which holds a lens, track coils are wound from a range of a flange of the lens to the outside in a diameter direction. The track coils become close to an optical axis of the lens and close to the center of a magnetic field formed in a unipolar face-to-face type of magnetic circuit, with the result that it is possible to displace so that the optical axis is hard to be tilted and secure high reading accuracy. By forming a wound line shape of a focus coil and the track coils into a hexagon or the like, it is possible to make curving magnetic fluxes generated around magnetic pole surfaces hard to affect in the unipolar face-to-face type of magnetic circuit.