Abstract: A semiconductor device and a method of fabricating the same according to this invention are such that: a gate insulator is formed over a predetermined region of a semiconductor substrate; a gate electrode is formed on the gate insulator; source and drain regions respectively formed in portions of the predetermined region that are situated on both sides of the gate electrode in plan view; a body region formed by a region of the predetermined region exclusive of the source and drain regions; and a contact electrically interconnecting the gate electrode and the body region, wherein a portion of the contact which is connected to the gate electrode is formed to intersect the gate electrode in plan view.

Abstract: A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.

Abstract: On an Si substrate 1, a buffer layer 2, a SiGe layer 3, and an Si cap layer 4 are formed. A mask is formed on the substrate, and then the substrate is patterned. In this manner, a trench 7a is formed so as to reach the Si substrate 1 and have the side faces of the SiGe layer 3 exposed. Then, the surface of the trench 7a is subjected to heat treatment for one hour at 750° C. so that Ge contained in a surface portion of the SiGe layer 3 is evaporated. Thus, a Ge evaporated portion 8 having a lower Ge content than that of other part of the SiGe layer 3 is formed in part of the SiGe layer 3 exposed at part of the trench 7a. Thereafter, the walls of the trench 7a are oxidized.

Abstract: A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.

Abstract: On an Si substrate 1, a buffer layer 2, a SiGe layer 3, and an Si cap layer 4 are formed. A mask is formed on the substrate, and then the substrate is patterned. In this manner, a trench 7a is formed so as to reach the Si substrate 1 and have the side faces of the SiGe layer 3 exposed. Then, the surface of the trench 7a is subjected to heat treatment for one hour at 750° C. so that Ge contained in a surface portion of the SiGe layer 3 is evaporated. Thus, a Ge evaporated portion 8 having a lower Ge content than that of other part of the SiGe layer 3 is formed in part of the SiGe layer 3 exposed at part of the trench 7a. Thereafter, the walls of the trench 7a are oxidized.

Abstract: In an image retrieving apparatus for retrieving a retrieving image in an input image, a color histogram of an image in a retrieving area in the input image is compared with a color histogram of the retrieving image. At first, a candidate area in which the retrieving image can be included is roughly retrieved by rough image retrieving with selecting a larger retrieving area and a rough resolution of gradation of the histograms. Subsequently, an area including an image corresponding to the retrieving image is precisely retrieved by fine image retrieving with a smaller retrieving area and a fine resolution of gradation of the histograms.

Abstract: A multi-layer film 10 is formed by stacking a Si1-x1-y1Gex1Cy1 layer (0?x1<1 and 0<y1<1) having a small Ge mole fraction, e.g., a Si0.785Ge0.2C0.015 layer 13, and a Si1-x2-y2Gex2Cy2 layer (0<x2?1 and 0?y2<1) (where x1<x2 and y1>y2) having a high Ge mole fraction, e.g., a Si0.2Ge0.8 layer 12. In this manner, the range in which the multi-layer film serves as a SiGeC layer with C atoms incorporated into lattice sites extends to high degrees in which a Ge mole fraction is high.

Abstract: An image sensing apparatus includes: a yaw sensor for detecting a shake of the image sensing apparatus in a yaw direction, a pitch sensor for detecting a shake of the image sensing apparatus in a pitch direction, the pitch sensor having a detection precision higher than the yaw sensor, and a shake correcting section for correcting a shake of the image sensing apparatus based on an output signal from the yaw sensor and an output signal from the pitch sensor. The shake correction can be performed with higher precision.

Abstract: A semiconductor layer 30 of a graded SiGe-HDTMOS is constructed of an upper Si film 12, an Si buffer layer 13, an Si1−xGex film 14 and an Si cap layer 15. The region between a source region 20a and drain region 20b of the semiconductor layer 30 includes a high concentration n-type Si body region 22 and an n Si region 23, an Si cap region 25 and an SiGe channel region 24. A Ge composition ratio x of the Si1−xGex film 14 is made to increase from the Si buffer layer 13 to the Si cap layer 15. For the p-type HDTMOS, the electron current component of the substrate current decreases.

Abstract: A breather device of an engine is connected to an engine suction system. A breather chamber thereof for separating a blowby gas generated inside a crank chamber of the engine into gas and liquid is formed so as to face to a mating face of a plurality of cases, including a crankcase, connected to each other via a gasket, and a communication port is formed to the gasket, through which the blowby gas comes and goes in a space within the plurality of cases to thereby carry out the gas-liquid separation of the blowby gas. A cam chamber receiving a cam for driving a valve train provided for a cylinder head of the engine is arranged at a connection portion of the plurality cases including the crankcase in a sectioned manner in adjacent to the crank chamber in an axial direction of the crankshaft, and the breather chamber is formed above the cam chamber, the breather chamber being provided with a main opening so as to face to the cam chamber.

Abstract: A camera, as soon as the user finishes using it, quickly assumes a not-in-use appearance that the camera is designed to assume when it is out of operation. The camera incorporates, inside its body, a taking optical system including a turning optical system for turning the optical path of the light from a shooting target substantially at a right angle and a zoom optical system for varying shooting magnification. The body has an opening through which the front face of the taking optical system is exposed, and has a barrier for closing the opening. The camera, when a command to stop operation is given, performs the process of closing the barrier with highest priority, and then performs the process of extinguishing display with second highest priority. The camera, now having assumed an appearance that it is supposed to assume when out of operation, then performs other, internal, processes for stopping operation.

Abstract: A semiconductor device and a method of fabricating the same according to this invention are such that: a gate insulator is formed over a predetermined region of a semiconductor substrate; a gate electrode is formed on the gate insulator; source and drain regions respectively formed in portions of the predetermined region that are situated on both sides of the gate electrode in plan view; a body region formed by a region of the predetermined region exclusive of the source and drain regions; and a contact electrically interconnecting the gate electrode and the body region, wherein a portion of the contact which is connected to the gate electrode is formed to intersect the gate electrode in plan view.

Abstract: A silicon oxide film 102, a Pt film 103x, a Ti film 104x and a PZT film 105x are deposited in this order over a Si substrate 101. The Si substrate 101 is placed in a chamber 106 so that the PZT film 105x is irradiated with an EHF wave 108. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate 101.

Abstract: A digital camera having an image shake correction apparatus and a method of preventing the image shake of an image taken by the digital camera. The digital camera includes optical elements arranged along a bent line for focusing an object image upon a light receiving plane in which the elements include at least one mirror which reflects a light from an object toward the light receiving plane, a driver for moving the mirror so as to turn its light axis having been bent by the mirror, a vibration sensor for sensing a vibration of a camera body, and a processor for making the driver move the mirror based on the sensed vibration. The mirror turns so as to cancel the vibration of the object image focussed on the light receiving plane.

Abstract: A photographing device having a flexion optical system which prevents a user's finger(s) from interfering with a lens opening portion carelessly or unpreparedly, and which allows constituent parts of the photographing device to be arranged effectually inside a body thereof to make it low-profile and compact. The flexion optical system extends fully in a direction of right and left of the body thereof, or fully in a direction of up and down of the body, as the photographing device in a standard posture, or position, is viewed from a side of an object, the image of which is captured by the photographing device.

Abstract: A digital camera which allows to make thickness, height and width of its camera body small. The camera has a first optical member for generally perpendicularly bending a first optical axis of light coming from an object through a lens opening part, a second optical member for bending a second optical axis of light coming from the first optical member, and an image taking element having a light receiving surface for receiving a third optical axis of light coming from the second optical member in which the light receiving surface crosses the third optical axis of light. The third optical axis of light is included in a plane which is different from a plane including both of the first optical axis of light and the second optical axis thereof.

Abstract: A camera is provided with: a detector for detecting a shake amount of the apparatus with respect to an object at an interval; a calculator for calculating a shake speed and a shake acceleration rate based on detected shake amounts, and calculates an estimative shake amount based on a calculated shake speed, a calculated shake acceleration rate, and a coefficient k (0<k<1) on an assumption that a shake is uniformly accelerated motion, the coefficient k being a multiplier for the calculated shake acceleration rate; and a corrector for executing a shake correction in accordance with a calculated estimative shake amount.

Abstract: Imaging lens device has a zoom lens system and an image sensor. The zoom lens system has a first reflecting surface, a first movable lens unit, an aperture stop, a second reflecting surface, a second movable lens unit. A first reflecting surface bends a first optical axis which is an incident optical axis of the zoom lens system 90 degrees into a second optical axis. A second reflecting surface bends the second optical axis 90 degrees into a third optical axis. The first optical axis, the second optical axis and the third optical axis are mutually perpendicular. The first movable lens unit and the aperture stop are disposed on the second optical axis. The second movable lens unit is disposed on the third optical axis. During zooming, the first and second reflecting surfaces and the aperture stop are stationary; the first and second movable lens units are moved, respectively.

Abstract: A multi-layer film 10 is formed by stacking a Si1-x1-y1Gex1Cy1 layer (0≦x1<1 and O<yl<1) having a small Ge mole fraction, e.g., a Si0.785Ge0.2C0.015 layer 13, and a Si1x-2-y2Gex2Cy2 layer (0<x2≦1 and 0≦y2<1) (where x1<x2 and y1>y2) having a high Ge mole fraction, e.g., a Si0.2Ge0.8 layer 12. In this manner, the range in which the multi-layer film serves as a SiGeC layer with C atoms incorporated into lattice sites extends to high degrees in which a Ge mole fraction is high.

Abstract: In the method for fabricating a semiconductor device of the present invention, a collector layer of a first conductivity type is formed in a region of a semiconductor substrate sandwiched by device isolation. A collector opening is formed through a first insulating layer deposited on the semiconductor substrate so that the range of the collector opening covers the collector layer and part of the device isolation. A semiconductor layer of a second conductivity type as an external base is formed on a portion of the semiconductor substrate located inside the collector opening, while junction leak prevention layers of the same conductivity type as the external base are formed in the semiconductor substrate. Thus, the active region is narrower than the collector opening reducing the transistor area, while minimizing junction leak.