Abstract: A dielectric film capacitor includes a lower electrode having an opening and formed of a material including platinum, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film. The planar area of the lower electrode is 50% or more of the area of a formation region of the dielectric film. A dielectric film capacitor includes a lower electrode formed of a material including platinum and having a thickness of 10 to 100 nm, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film.

Abstract: Provided is a silicon nitride film which has an excellent charge storage capacity and thus is useful as a charge storage layer of a semiconductor memory device. The silicon nitride film having substantially uniform trap density in the film thickness direction has high charge storage performance. The silicon nitride film is formed by plasma CVD by using a plasma processing apparatus (100), wherein microwaves are introduced into a chamber (1) by a plane antenna having a plurality of holes, plasma is generated by the microwaves while a source gas including nitrogen-containing compound and silicon-containing compound is introduced into the chamber (1), and the silicon nitride film is deposited on the surface of a processing object by the plasma.

Abstract: A Plasma processing apparatus (100) introduces microwaves into a chamber (1) by a plane antenna (31) which has a plurality of holes. A material gas, which contains a nitrogen-containing compound and a silicon-containing compound, is introduced into the chamber (1) by using the plasma processing apparatus, and plasma is generated by the microwaves. Then, a silicon nitride film is deposited by the plasma on a surface of an object to be processed. The trap density of the silicon nitride film is controlled by adjusting the conditions of the plasma CVD process.

Abstract: The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film.

Abstract: A stator position adjustment method for a motor drive device that includes a motor case, a rotor shaft supported by the motor case in order to rotate a rotor inside the motor case, and a stator disposed at an outer circumference of the rotor concentrically with the rotor and having a configuration in which the stator is tightened and secured to the motor case by a tightening unit that tightens the stator along a rotor axis. The method includes the steps of setting a first tolerance range as a maximum tolerance range of a stator axis in which a first gap is formed between an outer circumference surface of the stator and an inner circumference surface of the motor case; measuring a position of the stator axis; and adjusting the position of the stator axis within the first tolerance range based on a measured position of the stator axis.

Abstract: A capacitor having a high quality and a manufacturing method of the same are provided. A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, and an upper electrode formed so as to cover the upper electrode, an opening portion of the upper electrode and an opening portion of the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to pattern the dielectric layer by using the upper electrode as a mask, and provide a capacitor having a high-quality dielectric layer by preventing impurity diffusion into the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to prevent the dielectric layer from being exposed to etching liquid, liquid developer, etc.

Abstract: Atmosphere in processing apparatus is adjusted to, for example, oxygen atmosphere, by gas supply source and the like. Interior of thermal processing apparatus is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat containing wafer W having dielectric precursor layer formed is loaded into thermal processing apparatus at speed at which no defects are produced in wafer W. Thereafter, reaction tube of thermal processing apparatus has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in thermal processing apparatus and then to room temperature in processing apparatus, and carried out from processing apparatus.

Abstract: A processing method of a substrate includes: a step of forming an Si—C based film and a resist film in turn on an objective film to be etched that has been formed on a substrate; a first etching step of etching the Si—C based film making use of the resist film as a mask; and a second etching step of etching the objective film to be etched making use of the resist film and the Si—C based film as a mask. The processing method further includes a peeling-off step of peeling-off the resist film at a desired timing. The peeling-off step includes a preparing step of preparing an organic solvent as a release agent, and an applying step of applying the organic solvent to the resist film.

Abstract: A dielectric film capacitor includes a lower electrode having an opening and formed of a material including platinum, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film. The planar area of the lower electrode is 50% or more of the area of a formation region of the dielectric film. A dielectric film capacitor includes a lower electrode formed of a material including platinum and having a thickness of 10 to 100 nm, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film.

Abstract: An electrostatic capacitance sensor, includes an electrostatic capacitance detector, an operational amplifier in which a feedback impedance circuit is connected between an output terminal and an inverse input terminal of the operational amplifier, a signal line connected between the inverse input terminal of the operational amplifier and the electrostatic capacitance detector, an alternating-current signal generator connected to a non-inverse input terminal of the operational amplifier, and a shield for shielding at least a portion of the signal line, the shield being connected to the non-inverse input terminal of the operational amplifier and the alternating-current signal generator. The electrostatic capacitance detector includes a detecting electrode and a shield electrode. The detecting electrode includes a detector-detecting electrode for detecting an object to be detected and an electrode introducer-detecting electrode for introducing an electrode to the detector-detecting electrode.

Abstract: A magnesium halide salt of a 2-alkyl-2-adamantanol is reacted with a carboxylic acid halide such as acrylic chloride or the like in the presence of a tertiary amine to produce a 2-alkyl-2-adamantyl ester (the first invention). A 2-alkyl-2-adamantanol is reacted with a carboxylic acid such as acrylic acid or the like in the presence of an acid catalyst such as concentrated sulfuric acid or the like and a drying agent composed of an acidic or neutral inorganic compound (e.g. magnesium sulfate) which is a solid at ordinary temperature in a dried state or of a water-absorbing high-molecular compound, to produce a 2-alkyl-2-admantyl ester (the second invention). The above ester is important as a raw material for a resist for semiconductor production.

Abstract: There is provided a method for obtaining a high-purity alkyladamantyl ester from an alkyladamantyl ester composition containing a large quantity of alkyladamantyl halide obtained by, for example, alkylating raw material 2-adamantanone obtained through oxidation of adamantane by use of an organic metal reagent and then causing an acid halide to react with the resulting product, efficiently by a simple process. To an alkyladamantyl ester composition containing an alkyladamantyl halide such as 2-chloro-2-methyladamantane in an amount of larger than 0.5 parts by weight based on 100 parts by weight of alkyladamantyl ester such as 2-methyl-2-adamantyl methacrylate, a mixed solution of, for example, methanol and a sodium hydroxide aqueous solution is added. By bringing the alkali compound into contact with the alkyladamantyl halide in a homogeneous system so as to convert the halide into a compound which produces no acid when heated, the amount of the alkyladamantyl halide in the composition is reduced to 0.

Abstract: An electrostatic capacitance sensor, includes an electrostatic capacitance detector, an operational amplifier in which a feedback impedance circuit is connected between an output terminal and an inverse input terminal of the operational amplifier, a signal line connected between the inverse input terminal of the operational amplifier and the electrostatic capacitance detector, an alternating-current signal generator connected to a non-inverse input terminal of the operational amplifier, and a shield for shielding at least a portion of the signal line, the shield being connected to the non-inverse input terminal of the operational amplifier and the alternating-current signal generator. The electrostatic capacitance detector includes a detecting electrode and a shield electrode. The detecting electrode includes a detector-detecting electrode for detecting an object to be detected and an electrode introducer-detecting electrode for introducing an electrode to the detector-detecting electrode.

Abstract: The present invention discloses an adamantyl ester monomer composition characterized by containing at least an adamantyl ester monomer having at least one polymerizable unsaturated bond in the molecule, and a compound represented by the following general formula (1): (in the formula, R1 is an alkyl group of 1 to 5 carbon atoms, R2 is an alkyl group of 1 to 5 carbon atoms, R3 is a hydrogen atom or an alkyl group of 1 to 5 carbon atoms, and R4 is a hydrogen atom or a methyl group). The composition has high storage stability and, by subjecting it to distillation, an adamantyl ester monomer of high purity can be obtained easily.

Abstract: An electrostatic capacitance sensor, includes an electrostatic capacitance detector, an operational amplifier in which a feedback impedance circuit is connected between an output terminal and an inverse input terminal of the operational amplifier, a signal line connected between the inverse input terminal of the operational amplifier and the electrostatic capacitance detector, an alternating-current signal generator connected to a non-inverse input terminal of the operational amplifier, and a shield for shielding at least a portion of the signal line, the shield being connected to the non-inverse input terminal of the operational amplifier and the alternating-current signal generator. The electrostatic capacitance detector includes a detecting electrode and a shield electrode. The detecting electrode includes a detector-detecting electrode for detecting an object to be detected and an electrode introducer-detecting electrode for introducing an electrode to the detector-detecting electrode.

Abstract: A high-purity alicyclic ketone which is a raw material for an alkyl-substituted alicyclic ester such as an alkyl adamantyl ester compound which is useful as a resist raw material can be obtained by a simple operation such as extraction without a special purification step such as distillation or recrystallization. In this process, when an alicyclic hydrocarbon is oxidized with concentrated sulfuric acid or fuming sulfuric acid, the reaction solution after oxidation is poured into water and a solid is extracted with an organic solvent, the concentration of sulfuric acid in the water layer at the time of extraction is adjusted to 60 to 90 wt % to carry out extraction so as to obtain an alicyclic ketone.

Abstract: This invention discloses a process for preparing an 2-alkyl-2-adamantyl ester comprising the steps of combining a solution or suspension of 2-adamantanone and an alkyl halide with lithium metal for reacting them to generate an lithium 2-alkyl-2-adamantyl alcoholate, and then reacting the lithium 2-alkyl-2-adamantyl alcoholate with an acid halide.

Abstract: A second operational amplifier (11) of a core unit (1) shorts an inverting input terminal and an output terminal. A signal line (19) is connected to a non-inverting input terminal. A capacitive sensor (18) is connected to the signal line (19). A first operational amplifier (12) earths the non-inverting input terminal. One end of a first resistance (15) and one end of a second resistance (16) are respectively connected to the inverting input terminal. The other end of the first resistance (15) is connected to an alternate current voltage generator (14). The other end of the second resistance (16) is connected to the output terminal of the first operational amplifier (11). A signal output terminal (21) of the core unit (1) is connected to an inverting amplification device (2). An alternate output terminal (22) of the core unit (1) and an inverting output terminal (42) of the inverting amplification device (2) are connected to an addition device (3).

Abstract: There is provided a method for obtaining a high-purity alkyladamantyl ester from an alkyladamantyl ester composition containing a large quantity of alkyladamantyl halide obtained by, for example, alkylating raw material 2-adamantanone obtained through oxidation of adamantane by use of an organic metal reagent and then causing an acid halide to react with the resulting product, efficiently by a simple process.

Abstract: There is provided a method for obtaining an alkyladamantyl ester efficiently by distilling and purifying a crude alkyladamantyl ester containing impurities which decompose the alkyladamantyl ester without decomposing the alkyladamantyl ester. The crude alkyladamantyl ester such as crude 2-methyl-2-adamantyl methacrylate is distilled in the presence of a heterocyclic compound and/or a basic compound such as 3-ethyl-3-hydroxymethyloxetane or diglycidyl bisphenol A.