Abstract: [Technical Problem] An object is to provide a lubricant capable of forming a stable adsorption film on a sliding surface and stabilizing the sliding characteristics (for example, ensuring the wear resistance, etc.). [Solution to Problem] The present invention provides a lubricant represented by the following chemical structural formula. (R: a hydrocarbon group whose carbon number is 8 to 24, m and n: integers of 2 to 8) [Selected Figure] FIG.

Abstract: Provided is a production method for a water-absorbing resin in which an absorption capacity without pressure of the resulting water-absorbing resin is high and a water-absorbing resin can be efficiently obtained. The production method for a water-absorbing resin including a polymerization step of polymerizing a monomer composition containing an internal crosslinking agent and a monomer to obtain a crosslinked hydrogel polymer, and a drying step of drying the crosslinked hydrogel polymer to obtain a dry polymer, in which the crosslinked hydrogel polymer to be subjected to the drying step contains 50 ppm or more of hydrogen peroxide with respect to the solid content mass of the crosslinked hydrogel polymer, and the crosslinked hydrogel polymer is heated during the drying step so that a maximum reaching temperature of the crosslinked hydrogel polymer exceeds 160° C., and/or the dry polymer is heated after the drying step so that a maximum reaching temperature of the dry polymer exceeds 160° C.

Abstract: It provides the measurement data of each portion of the target object with a high accuracy. The measurement data calculation apparatus 1020 includes an obtaining unit 1024A, an extraction unit 1024B, a conversion unit 1024C, and a calculation unit 1024D. The obtaining unit 1024A obtains the image data in which the target object is photographed and the full length data of the target object. The extraction unit 1024B extracts the shape data indicating the shape of the target object from the image data. The conversion unit 1024C converts and silhouettes the shape data based on the full length data. The calculation unit 1024D uses the shape data converted by the conversion unit 1024C to calculate the measurement data of each portion of the target object.

Abstract: An inspection method for determining a presence of a defect on a sides surface of a pillar-shaped honeycomb structure including generating strip-shaped images by repeatedly capturing the side surface part by part with an area camera while relatively moving the area camera with respect to the pillar-shaped honeycomb structure; determining the presence or absence of defects based on the strip-shaped images when a number of the strip-shaped images generated is sufficient to cover the entire side surface; a shutter speed when the area camera captures a part of the side surface for generating a single strip-shaped image is 10 to 1000 ?sec; and each of the strip-shaped images has a length covering the entire height of the pillar-shaped honeycomb structure in a longitudinal direction, and a length of 1 to 10 mm in a width direction.

Abstract: An inspection system for carrying out an inspection method for a pillar-shaped honeycomb structure, the inspection system including: a robot arm with a robot hand at a tip of the robot arm, the robot hand comprising a pair of gripping surfaces capable of gripping the pillar-shaped honeycomb structure from the first end surface and the second end surface, the pair of gripping surfaces being configured to be able to rotate the pillar-shaped honeycomb structure at a predetermined rotational speed while gripping the pillar-shaped honeycomb structure from the first end surface and the second end surface; the area camera for the side surface; a screen that can display the strip-shaped images; and a controller that can at least set a rotation speed of the pair of gripping surfaces and the shutter speed of the area camera for the side surface.

Abstract: A battery device includes: a storage unit that stores battery information including a closed circuit voltage of a plurality of battery cells electrically connected to each other and a change amount in the closed circuit voltage; a setting unit that sets an acquisition range of the closed circuit voltage based on the battery information; a detection unit that detects the closed circuit voltage; and a conversion unit that converts the closed circuit voltage detected by the detection unit into a digital signal within the acquisition range set by the setting unit.

Abstract: An imaging device includes a semiconductor substrate and a first transistor provided on the semiconductor substrate and including a first gate electrode, a source, and a drain. The semiconductor substrate includes a first well region of a second conductivity type, a second well region of a first conductivity type different from the second conductivity type, a first impurity region of the first conductivity type, the first impurity region being positioned in the first well region, being one of the source and the drain, holding charges generated by photoelectric conversion, and being electrically connected to the first gate electrode, and a second impurity region of the second conductivity type, the second impurity region being positioned in the second well region and electrically connected to the other of the source and the drain.

Abstract: A method for inspecting a pillar-shaped honeycomb structure including the steps of: imaging a pattern of transmitted light from the second end face according to arrangement of the plugged portions of first cells and second cells, with a camera via a light diffusing film placed parallel to a second end face of the pillar-shaped honeycomb structure in a non-contact state with the second end face, which pattern is obtained by irradiating a first end face with light; and detecting a defective plugged portion(s) of the second cells based on an image of the pattern of transmitted light imaged with the camera.

Abstract: An imaging device includes a charge accumulator, a first transistor, and a first capacitive element. The first transistor has a first source, a first drain, and a first gate electrode electrically connected to one of the first source and the first drain. The first capacitive element holds the charges and has a first terminal. A fixed potential is supplied to the other of the first source and the first drain. One of the first source and the first drain is always electrically connected to the first terminal of the first capacitive element from start to end of an exposure period.

Abstract: Excessive detections of a defect(s) of a specified defect type is reduced. A test apparatus: inputs each of a plurality of fragment images, which are extracted from a test image of a work, into a learning model which receives an image(s) as input and outputs a type(s), and thereby judges the type with respect to each of the plurality of fragment images. The test apparatus judges whether or not a defect of a specified defect type is captured in the test image, on the basis of whether the judged type with respect to each of the plurality of fragment images is the specified defect type or not.

Abstract: An imaging device including: a photoelectric converter that converts light into a charge; a first diffusion region of a first conductivity type to which the charge is input; a second diffusion region of the first conductivity type; a first plug that has a first surface directly connected to the first diffusion region; and a second plug that has a second surface directly connected to the second diffusion region, where an area of the second surface of the second plug is larger than an area of the first surface of the first plug in a plan view.

Abstract: A inspection method for a cylindrical honeycomb structure including a step of placing a cylindrical honeycomb structure made of ceramics on a rotation stage; a step of irradiating the side surface of the cylindrical honeycomb structure with light having a wavelength of 300 to 500 nm; a step of repeatedly capturing a reflected light from the side surface with a line sensor camera having a pixel resolution of 1 to 25 ?m/pix while the light is irradiated to the side surface and the cylindrical honeycomb structure is rotated around the axis of rotation, with a depth of field of the line sensor camera being adjusted to 0.5 to 5 mm; a step of generating an inspection image of the entire side surface; and a step of determining presence or absence of defects on the side surface based on the inspection image.

Abstract: An imaging device including a semiconductor substrate; a photoelectric converter that converts incident light into a signal charge, the photoelectric converter being stacked on the semiconductor substrate; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element connected between the transistor and a voltage source or a ground. The transistor is configured to switch between a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode, and in a cross-sectional view, the capacitive element is located between the semiconductor substrate and the photoelectric converter.

Abstract: An imaging device including a semiconductor substrate; pixels; and a signal line located along the pixels, where each of the pixels includes: a photoelectric converter that generates signal charge by photoelectric conversion, a first transistor that outputs a signal to the signal line according to an amount of the signal charge, and a circuit that is coupled to a gate of the first transistor and that includes a capacitive element, and the signal line is located closer to the semiconductor substrate than the capacitive element.

Abstract: An imaging device includes: a semiconductor substrate including a first diffusion region of a first conductivity type and a second diffusion region of the first conductivity type; a first plug that is connected to the first diffusion region and that contains a semiconductor; a second plug that is connected to the second diffusion region and that contains a semiconductor; and a photoelectric converter that is electrically connected to the first plug. An area of the second plug is larger than an area of the first plug in a plan view.

Abstract: An imaging apparatus includes a pixel region including a first substrate section and pixels, and a peripheral region including a second substrate section and no pixels. Each of the pixels includes a first electrode; a second electrode; a photoelectric conversion layer that is disposed between the first electrode and the second electrode; and a charge accumulation region disposed in the first substrate section. The pixel region includes first penetrating electrodes that electrically connect the first electrode to the charge accumulation region. The peripheral region includes second penetrating electrodes. An areal density of the first penetrating electrodes that is a ratio of an area of the first penetrating electrodes to an area of the pixel region is different from an areal density of the second penetrating electrodes that is a ratio of an area of the second penetrating electrodes to an area of the peripheral region.

Abstract: An imaging device includes a counter electrode, a photoelectric conversion layer that converts light into a signal charge, a plurality of sets of electrodes each of which collects the signal charge, each of the plurality of sets including a first electrode included in a high-sensitivity pixel and a second electrode included in a low-sensitivity pixel, and an auxiliary electrode which is located, as seen in plan view, between the first electrode and the second electrode in each of the plurality of sets and which is commonly included in the high-sensitivity pixel and the low-sensitivity pixel. The distance between the first electrode and the auxiliary electrode is different from the distance between the second electrode and the auxiliary electrode.

Abstract: An imaging device including: a photoelectric converter that converts incident light into a signal charge; a node to which the signal charge is input; a transistor having a source and a drain, one of the source and the drain being connected to the node; and a capacitive element. The capacitive element including a first electrode, a second electrode and a dielectric film sandwiched between the first electrode and the second electrode, the first electrode being connected to the other of the source and the drain of the transistor, the second electrode being connected to a voltage source or a ground. The transistor is configured to switch a first mode and a second mode, a sensitivity in the first mode being different from a sensitivity in the second mode.

Abstract: An inspection method for a pillar-shaped honeycomb filter having a honeycomb-shaped first end face and a honeycomb-shaped second end face, including: allowing gas containing fine particles to flow into the first end face; imaging the entire second end face covered with the sheet-like light using a camera while the gas that has flowed into the first end face flows out of the second end face through the filter, and generating an image of the entire second end face covered with the sheet-like light; selecting an inspection area of the second end face and measuring information concerning a sum of luminance of all pixels in the inspection area; and determining quality of the filter based on at least the information concerning the concentration of the fine particles in the gas before the gas flows into the first end face and the information concerning the sum of luminance.

Abstract: An imaging device including: a semiconductor substrate; pixels arranged in a first direction; and a signal line that extends in the first direction. Each of the pixels includes: a photoelectric converter that generates signal charge by photoelectric conversion, a region into which the signal charge is input, a first transistor that outputs a signal to the signal line according to an amount of the signal charge input into the region, and a capacity circuit that is coupled to a gate of the first transistor and that includes a first capacitive element, the first capacitive element including a first electrode, a second electrode and a first insulating layer between the first electrode and the second electrode, at least one of the first electrode and the second electrode containing a metal. Further, the signal line is located closer to the semiconductor substrate than the first capacitive element is.