Abstract: A display apparatus including: a display panel; and a chassis structure which holds the display panel, wherein the chassis structure includes a first chassis member in which a recess whose opening opens toward a display panel side is formed, and a second chassis member which is in a plate shape, and mounted on the first chassis member, covering at least a portion of the opening of the recess.

Abstract: A voltage/current verifier computes, for each phase, a phase difference between phase voltage and phase current from the phase of phase voltage and the phase of phase current computed for each phase by a phase acquirer, and determines conformity if all of the computed phase differences are within a preset range. A current/current verifier computes phase differences between phase currents from the phase of phase current computed for each phase by the phase acquirer, and determines conformity if all of the computed phase differences are less than 180°. A reporting device reports that a current transformer is incorrectly placed on a power line unless both the voltage/current verifier and the current/current verifier do not determine conformity.

Abstract: The invention provides a brain-specific gene useful in treating Alzheimer's disease, for instance, which comprises a nucleotide sequence cording for the amino acid sequence shown in SQ ID NO:1 and fragments thereof; an expression vector comprising the gene; a host cell comprising the expression vector; an expression product of the gene; an antibody against the product; a therapeutic and prophylactic composition for neurodegenerative disease; and the like.

Abstract: The laser beam projection mask 14 has three rectangular-shaped slits 25, 26, 27 as transmission areas. These three slits 25, 26, 27 are formed in sequence in X direction shown by an arrow X in FIG. 2C at specified intervals, and the width in the X direction decreases in the order of the slit 25, the slit 26 and the slit 27. More particularly, transmission coefficients of the transmission areas change in conformity with a temperature distribution curve V1 of a silicon film 4 shown in FIG. 2B.

Abstract: Embodiments of the invention relate to manufacturing method of a magnetic head slider which flies stably even with a reduced peripheral speed resulting from a trend toward a magnetic disk having a smaller diameter. According to one embodiment, a method of manufacturing a magnetic head slider comprises forming a leading side rail surface and a trailing side rail surface, a leading stepped bearing surface and a trailing stepped bearing surface, and a negative-pressure groove surface on an air bearing surface through etching, forming a first stepped surface on the leading side rail surface through sputtering, and forming a second stepped surface by forming a carbon layer on the first stepped surface through sputtering. The first stepped surface has a first height with respect to the leading side rail surface and the second stepped surface has a second height with respect to the first stepped surface.

Abstract: The invention provides a brain-specific gene useful in treating Alzheimer's disease, for instance, which comprises a nucleotide sequence cording for the amino acid sequence shown in SEQ ID NO:1 and fragments thereof; an expression vector comprising the gene; a host cell comprising the expression vector; an expression product of the gene; an antibody against the product; a therapeutic and prophylactic composition for neurodegenerative disease; and the like.

Abstract: The invention provides a brain-specific gene useful in treating Alzheimer's disease, for instance, which comprises a nucleotide sequence cording for the amino acid sequence shown in SEQ ID NO:1 and fragments thereof; an expression vector comprising the gene; a host cell comprising the expression vector; an expression product of the gene; an antibody against the product; a therapeutic and prophylactic composition for neurodegenerative disease; and the like.

Abstract: The invention provides a brain-specific gene useful in treating Alzheimer's disease, for instance, which comprises a nucleotide sequence cording for the amino acid sequence shown in SEQ ID NO:1 and fragments thereof; an expression vector comprising the gene; a host cell comprising the expression vector; an expression product of the gene; an antibody against the product; a therapeutic and prophylactic composition for neurodegenerative disease; and the like.

Abstract: The invention provides a brain-specific gene useful in treating Alzheimer's disease, for instance, which comprises a nucleotide sequence cording for the amino acid sequence shown in SQ ID NO:1 and fragments thereof; an expression vector comprising the gene; a host cell comprising the expression vector; an expression product of the gene; an antibody against the product; a therapeutic and prophylactic composition for neurodegenerative disease; and the like.

Abstract: A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.

Abstract: A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.

Abstract: A vacuum cleaner includes an electric blower for generating a suction air flow, a suction head in communication with the electric blower for drawing in dirt, a filter bag communication with the electric blower for capturing and collecting dirt, an exhaust unit for discharging exhaust air from the electric blower to atmosphere, and an ion generator for generating negative ions and/or positive ions. The ion generator is placed between the suction head and the filter bag.

Abstract: Embodiments of the invention provide solutions to a problem, in which a reduced peripheral speed resulting from a trend toward a magnetic disk having a smaller diameter makes it more and more difficult to achieve a lifting force that allows a magnetic head slider to fly stably. According to one embodiment, in a magnetic head slider comprising a leading edge, a trailing edge, and an air bearing surface, the air bearing surface includes a plurality of leading side rail surfaces, a trailing side rail surface disposed in the same plane as the leading side rail surfaces and having a magnetic head mounted thereon, a stepped bearing surface having a predetermined depth ?1 from the leading side rail surface, and a negative-pressure groove surface having a depth ?2 from the leading side rail surface, the depth ?2 being even deeper than the stepped bearing surface.

Abstract: A fabrication method of a crystallized semiconductor thin film is such that: by performing pulse irradiation of energy beams in a minute slit shape to a semiconductor thin film (5), the semiconductor thin film (5) of an region to which the energy beams are irradiated is fused and solidified over the whole area in a thickness direction so as to be crystallized, a main beam (6) and a sub beam (7), having smaller energy per unit area than that of the main beam (6), which adjoins the main beam (6), being irradiated to the semiconductor thin film (5).

Abstract: A first laser beam is emitted from a first laser oscillator in a pulsed manner at a high repetition frequency, and converged onto a substrate by a first intermediate optical system 2 so as to form a slit-like first beam spot. A second laser beam is emitted from a second laser beam oscillator in a pulsed manner to rise precedent to and fall subsequent to the first laser beam, and converged onto the substrate by a second intermediate optical system so as to form a second beam spot similar in configuration to the first beam spot and to contain the first beam spot. Crystallization of a semiconductor thin film on the substrate is carried out while the substrate or the first, second beam spots are moved. Thereby, the whole semiconductor thin film is formed into a crystal surface that has grown in one direction and free from ridges. Thus, the semiconductor thin film has an extremely flat surface, extremely few defects, large crystal grains and high throughput.

Abstract: The laser beam projection mask 14 has three rectangular-shaped slits 25, 26, 27 as transmission areas. These three slits 25, 26, 27 are formed in sequence in X direction shown by an arrow X in FIG. 2C at specified intervals, and the width in the X direction decreases in the order of the slit 25, the slit 26 and the slit 27. More particularly, transmission coefficients of the transmission areas change in conformity with a temperature distribution curve V1 of a silicon film 4 shown in FIG. 2B.

Abstract: A fabrication method of a semiconductor thin film including a polycrystalline semiconductor region by irradiating a precursor semiconductor thin film substrate with at least two types of laser beams, and melting-recrystallizing the precursor semiconductor thin film, wherein the radiation timing or power density of the at least two types of laser beams is controlled according to change in reflectance of a site of the precursor semiconductor thin film substrate irradiated with a predetermined reference laser beam.

Abstract: A fabrication method of a semiconductor thin film including a polycrystalline semiconductor region by irradiating a precursor semiconductor thin film with at least two types of laser beams, and melting-recrystallizing the precursor semiconductor thin film, wherein the precursor semiconductor thin film is irradiated with a predetermined reference laser beam, and a radiation initiation time or power density of a laser beam is controlled according to change in reflectance of the site irradiated with the reference laser beam. A semiconductor thin film fabrication apparatus used in the fabrication method of present invention, wherein includes at least two light sources, a sensing unit, and a control unit. The crystals formed have no difference in the length of crystal caused by variation in the energy of each radiation.

Abstract: The invention provides a brain-specific gene useful in treating Alzheimer's disease, for instance, which comprises a nucleotide sequence cording for the amino acid sequence shown in SQ ID NO:1 and fragments thereof; an expression vector comprising the gene; a host cell comprising the expression vector; an expression product of the gene; an antibody against the product; a therapeutic and prophylactic composition for neurodegenerative disease; and the like.

Abstract: A semiconductor device is provided which has high reliability and which can reduce electrical power consumption. The semiconductor device has an element isolation region formed in a semiconductor substrate, and a depth X of the element isolation region and a width Y thereof isolating adjacent doped layers from each other satisfy an equation represented by X/Y=1.33 to 1.67.