Abstract: A semiconductor chip (1) is flip-chip mounted on a circuit board (4) with an underfill resin (6) interposed between the semiconductor chip (1) and the circuit board (4) and a container covering the semiconductor chip (1) is bonded on the circuit board (4). At this point, the semiconductor chip (1) positioned with the underfill resin (6) interposed between the circuit board (4) and the semiconductor chip (1) is pressed and heated by a pressure-bonding tool (8); meanwhile, the surface of the underfill resin (6) protruding around the semiconductor chip (1) is pressed by the pressure-bonding tool (8) through a film (13) on which a surface unevenness is formed in a periodically repeating pattern, so that a surface unevenness (16a) is formed. The inner surface of the container covering the semiconductor chip (1) is bonded to the surface unevenness (16a) on the surface of the underfill resin.

Abstract: A mounting structure is provided which includes an electronic component; a circuit board; a first insulating resin and a second insulating resin which are placed between the electronic component and the circuit board, for sealing; a plurality of bumps are formed on the electronic component or the circuit board; a plurality of counter electrodes of the circuit board or the electronic component, connected to the plurality of bumps; and a plurality of joining regions. The plurality of joining regions are formed by the second insulating resin, a plurality of first insulating resin regions are disposed around the joining regions so that the joining regions are sandwiched by the plurality of first insulating resin regions, the first insulating resin and the second insulating resin each contain filler, and the second insulating resin has a higher curing temperature than the curing temperature of the first insulating resin.

Abstract: While bumps formed on pads of a semiconductor chip and a board having a sheet-like seal-bonding resin stuck on its surface are set face to face, the bumps and the board are pressed to each other with a tool, thereby forming a semiconductor chip mounted structure in which the seal-bonding resin is filled between the semiconductor chip and the board and in which the pads of the semiconductor chip and the electrodes of the board are connected to each other via the bumps, respectively. Entire side faces at corner portions of the semiconductor chip are covered with the seal-bonding resin. Therefore, loads generated at the corner portions due to board flexures for thermal expansion and contraction differences among the individual members caused by heating and cooling during mounting as well as for mechanical loads after mounting so that internal breakdown of the semiconductor chip can be avoided.

Abstract: A semiconductor device includes a semiconductor element having a plurality of element electrodes formed thereon, a circuit board having board electrodes respectively corresponding to the element electrodes formed thereon and having the semiconductor element mounted thereon, and bumps each of which is provided on at least one of the element electrode and the board electrode, and connects together the element electrode and the board electrode corresponding to each other when the semiconductor element is mounted on the circuit board. Furthermore, at least one of a dielectric layer and a resistive layer is provided between at least one of the bumps and the element or board electrode on which the at least one of the bumps is provided, so that the element or board electrode, the dielectric layer or the resistive layer, and the bump form a parallel-plate capacitor or electrical resistance.

Abstract: An electronic component, in which the outer perimeter portion of a component (2) is surrounded with a first sealing resin (4), a second sealing resin (3) is filled within the periphery of the first sealing resin (4), the component (2) and a board (1) are electrically connected by a wire (5), the edge, in the vicinity of which the wire (5) passes, of the outer perimeter edge portions of the component (2) is formed to be a chamfered oblique surface (31), and the wire (5) is provided to extend to the board (1) along the oblique surface (31). By this means, the overall height of the electronic component can be kept low.

Abstract: While bumps formed on pads of a semiconductor chip and a board having a sheet-like seal-bonding resin stuck on its surface are set face to face, the bumps and the board are pressed to each other with a tool, thereby forming a semiconductor chip mounted structure in which the seal-bonding resin is filled between the semiconductor chip and the board and in which the pads of the semiconductor chip and the electrodes of the board are connected to each other via the bumps, respectively. Entire side faces at corner portions of the semiconductor chip are covered with the seal-bonding resin. Therefore, loads generated at the corner portions due to board flexures for thermal expansion and contraction differences among the individual members caused by heating and cooling during mounting as well as for mechanical loads after mounting so that internal breakdown of the semiconductor chip can be avoided.

Abstract: A semiconductor assembly includes a multilayer wiring board including at least three insulating layers, first, second and third insulating layers and a semiconductor device attached to one principal surface of the first insulating layer. The first, second and third insulating layers are stacked in this order. The multilayer wiring board further includes a heat-insulating member made of a material having a lower thermal conductivity than the insulating layers. The heat-insulating member is disposed between the first and second insulating layers or next to the first insulating layer at a side opposite to the one principal surface.

Abstract: While bumps formed on pads of a semiconductor chip and a board having a sheet-like seal-bonding resin stuck on its surface are set face to face, the bumps and the board are pressed to each other with a tool, thereby forming a semiconductor chip mounted structure in which the seal-bonding resin is filled between the semiconductor chip and the board and in which the pads of the semiconductor chip and the electrodes of the board are connected to each other via the bumps, respectively. Entire side faces at corner portions of the semiconductor chip are covered with the seal-bonding resin. Therefore, loads generated at the corner portions due to board flexures for thermal expansion and contraction differences among the individual members caused by heating and cooling during mounting as well as for mechanical loads after mounting so that internal breakdown of the semiconductor chip can be avoided.

Abstract: This semiconductor device is a semiconductor device in which a semiconductor element is flip-chip mounted onto a circuit substrate and the semiconductor element is covered and sealed with a sealing resin. A recess portion is formed in the sealing resin on a surface opposite to the mounting surface of the semiconductor element. Warping of the semiconductor device is reduced by the action of this recess portion.

Abstract: A flip-chip mounting apparatus has a shield film (18) on the side of a pressurizing film (10b) of a tool protection sheet (10). When a semiconductor chip (1) is heated and pressurized via the tool protection sheet (10), the pressurizing film (10b) is released from a mold by a sheet fixing jig (9), and is expanded by a pressurizing/heating tool (11) to abut against an insulating resin film (5) protruding from the periphery of the semiconductor chip (1) and cure the insulating resin film (5) with an external pressure being applied.

Abstract: A solder bump and a conductive connection structure are provided which can conductively connect a semiconductor chip and a substrate with high connection reliability. Filler 5 is contained in a solder bump 6 and a solder joint 17 which connect a connection electrode 3 of a semiconductor chip 2 and a substrate 11, and the filler has a larger density on the side of the connection electrode 3 than on the side of the substrate 11 in the solder joint 17. Therefore, in the cooling solidification of solder, the shrinkage of the solder joint 17 near the connection electrode 3 of the semiconductor chip 2 is reduced by the filler 5 and the occurrence of a stress is reduced on the peripheral portion of the connection electrode 3, thereby preventing the occurrence of cracks near the joint.

Abstract: A recess portion is formed on a board surface at a position facing a peripheral end portion of a semiconductor device so as to place a sealing-bonding resin partially inside the recess portion. Thereby, increases of a placement area for a fillet portion (foot spreading portion) of the sealing-bonding resin are suppressed while its inclination angle is increased. Thus, stress loads that occur to peripheral portions of the semiconductor device due to thermal expansion differences and thermal contraction differences among individual members caused by heating and cooling processes during a mounting operation are relaxed, by which internal breakdown of the semiconductor device mounted structure is avoided.

Abstract: In a semiconductor device mounted structure in which device electrodes of a semiconductor device and board electrodes of a board are connected to each other via bump electrodes, respectively, and in which a sealing-bonding resin is placed between the semiconductor device and the board, a void portion is placed at a position corresponding to an edge portion of the semiconductor device in the sealing-bonding resin. Thus, stress loads generated at corner portions of the semiconductor device due to board flexures for differences in thermal expansion and thermal contraction among the individual members caused by heating and cooling during mounting of the semiconductor device, as well as for mechanical loads after the mounting process, can be absorbed by the void portion and thereby reduced, so that breakdown of the semiconductor device mounted structure is prevented.

Abstract: A mounting structure of the present invention includes a semiconductor element 101, a circuit board 301 having electrodes 302 opposed to electrodes 102 of the semiconductor element 101, and conductive two-layer bumps 213. Second bumps 210 joined to the electrodes 302 of the circuit board 301 are formed larger than first bumps 209 joined to the electrodes 102 of the semiconductor element 101. The axis of the first bump 209 and the axis of the second bump 210 are not aligned with each other.

Abstract: A multilayer wiring board is inhibited from being warped when flip-chip bonding a semiconductor device to the multilayer wiring board, thereby increasing the reliability of connecting the semiconductor assembly to a motherboard. A heat-insulating layer 10 is provided between a core board 1 and a flip-chip bonding-side insulating layer 3 in a multilayer wiring board MB1, thereby preventing thermal conduction from a heat tool, so that the amounts of thermal expansion of the core board 1 and an insulating layer 4 are minimized, resulting in reduced warpage of the multilayer wiring board MB1.

Abstract: The present invention provides a semiconductor device of a double-side mounting structure including a circuit board and a plurality of semiconductor chips arranged and joined together on the opposite surfaces of the circuit board, wherein in an area in which the semiconductor chip 31 mounted on the top surface of the circuit board 2 overlaps with the semiconductor chip 32 mounted on the bottom surface of the circuit board 2, a recess portion 21 (or a protruding portion 22) is formed in the surfaces of the circuit board 2.

Abstract: A protruding electrodes is formed on a lead electrode of an electronic component, and the protruding electrodes comprises a first conductor formed on the lead electrode of the electronic component, and a second conductor overlaid on the first conductor by using a transfer mold having a concavity. By virtue of this structure, protruding electrodes of any configuration can be formed in fine pitches.

Abstract: In this semiconductor chip 3, a table electrode 13 is interposed between a bump electrode 14 and an electrode pad 6. The table electrode 13 is formed by forming a plurality of cores 15 having a smaller Young's modulus than the bump electrode 14, on the electrode pad 6, and then covering the surfaces of the cores 15 with a conductive electrode 16. When the semiconductor chip 3 is flip-chip mounted, the bump electrode 14 is plastically deformed and the table electrode 13 is elastically deformed appropriately, thereby obtaining a good conductive state.

Abstract: The electrode junction structure includes: a glass substrate; a plurality of flexible substrates, in a planar view, arranged to cross over an edge of the glass substrate and arranged to have a space from each other along the edge; an adhesive for joining the glass substrate and each flexible substrate; and a sealing resin for covering junction portions between the glass substrate and each flexible substrate, wherein an edge of the sealing resin is formed so that the edge of the sealing resin has, in the planar view, a consecutive waveform portion in which a convex portion and a concave portion alternate with an imaginary line as a center axis, the imaginary line being parallel to the edge of the glass substrate and locating outer than the edge of the glass substrate, and wherein the convex portions are formed to be located on the flexible substrates.

Abstract: A semiconductor chip (1) is flip-chip mounted on a circuit board (4) with an underfill resin (6) interposed between the semiconductor chip (1) and the circuit board (4) and a container covering the semiconductor chip (1) is bonded on the circuit board (4). At this point, the semiconductor chip (1) positioned with the underfill resin (6) interposed between the circuit board (4) and the semiconductor chip (1) is pressed and heated by a pressure-bonding tool (8); meanwhile, the surface of the underfill resin (6) protruding around the semiconductor chip (1) is pressed by the pressure-bonding tool (8) through a film (13) on which a surface unevenness is formed in a periodically repeating pattern, so that a surface unevenness (16a) is formed. The inner surface of the container covering the semiconductor chip (1) is bonded to the surface unevenness (16a) on the surface of the underfill resin.