Abstract: In a multinode storage system, a virtual disk associated with a storage device to be connected is created, and a slice of a connected storage device is allocated to one segment of the virtual disk. Next, one slice of data in the storage device to be connected is copied to the connected storage device. The rest of the data in the storage device to be connected is divided into slices, which are allocated to segments of the virtual disk. Then, metadata of the rest of the slices is written into a management information area in which copying of the data therefrom has been completed.

Abstract: An MR element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and second ferromagnetic layers. The spacer layer includes a nonmagnetic metal layer, a first oxide semiconductor layer, and a second oxide semiconductor layer that are stacked in this order. The nonmagnetic metal layer is made of Cu, and has a thickness in the range of 0.3 to 1.5 nm. The first oxide semiconductor layer is made of a Ga oxide semiconductor, and has a thickness in the range of 0.5 to 2.0 nm. The second oxide semiconductor layer is made of a Zn oxide semiconductor, and has a thickness in the range of 0.1 to 1.0 nm.

Abstract: An information processing apparatus includes a first storage unit and a processor. The first storage unit includes a first storage area. The processor receives a first request to write first data into the first storage area. The processor requests an external apparatus to write the first data into a second storage area in a second storage unit included in the external apparatus. The processor determines whether a first response has been received from the external apparatus. The first response indicates that the first data has been written into the second storage area. The processor writes the first data into the first storage area when the first response has been received. The processor requests, without writing the first data into the first storage area, the external apparatus to write second data stored in the first storage area into the second storage area when the first response has not been received.

Abstract: An information processing system includes a first processor to store data segments in a first memory, to send the data segments to be stored in the first memory to a second processor, and to read the data segments from the first memory so as to store the data segments in a second memory; and the second processor to store the data segments to be stored sent from the first processor in a third memory, wherein when the first processor notifies the second processor about data that is permitted to be removed, the first processor sends ID information to the second processor that renders a particular data segment that was last stored in the second memory identifiable, and the second processor removes from the third memory the particular data segment and an older data segment stored previous to the particular data segment from the data segments stored in the third memory.

Abstract: An MR element according to the present invention has the superior effects that further improve an MR ratio because a structure of a spacer layer 40 is configured of a certain three-layer structure with certain materials, and at least one of a first ferromagnetic layer 30 and a second ferromagnetic layer 50 contains a certain amount of an element selected from the group of nitrogen (N), carbon (C), and oxygen (O).

Abstract: Nodes respectively store a multilayer transposed Bloom filter. A client selects a node N1 from among the group of nodes and transmits a search request to the node N1. Upon receiving a reply from the node N1, the client determines whether the received search result indicates “positive”. If the search result is not positive, the client selects in order of node number, a node N2 and transmits a search request to the node N2. Upon receiving a reply from the node N2, the client determines whether the received search result indicates “positive”. Upon determining that the search result is positive, the client outputs the search result and ends the search notification process.

Abstract: An MR element in a CPP-GMR structure includes a first ferromagnetic layer, a spacer layer that is epitaxially formed on the first ferromagnetic layer, a second ferromagnetic layer that is located on the spacer layer, and that is laminated with the first ferromagnetic layer to sandwich the spacer layer. A sense current flows along a lamination direction of the first and second ferromagnetic layers. Angle of magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer relatively change due to an externally applied magnetic field.

Abstract: A non-transitory, computer readable storage medium storing a program for a computer being capable of accessing a group of nodes having divided-data structures obtained by dividing a data structure having a transposed hierarchical bloom filter of a hierarchical bloom filter and sets of data blocks by a predetermined bit width, wherein the hierarchical bloom filter has h-stage bloom filter arrays each having a bit width of “s”, the hth-stage bloom filter array having bits indicating false positives or negatives and the pth-stage bloom filter array having n=d[h-(p-1)] bloom filters (where 1?p?h) each having a bit width of m=s/d[h-(p-1)] (where d indicates a division number for the hth-stage bloom filter array), the transposed hierarchical bloom filter is obtained in the bloom filters in the bloom filter array, and the set of data blocks corresponds to the first-stage bloom filter array of the hierarchical bloom filter.

Abstract: A magnetoresistive effect element is structured in the manner that the antiferromagnetic layer interposed between the upper and lower shields is eliminated and the antiferromagnetic layer is positioned in a so-called shield layer. Therefore, it is realized to solve a pin reversal problem and to allow narrower tracks and narrower read gaps.

Abstract: An access method includes: obtaining, by a computer, a result of monitoring a busy rate and a number of access operations per unit time of a storage device, the storage device having a first storage area and a second storage area; calculating a characteristic of correlation between the busy rate and the number of access operations per unit time based on the result; calculating a second number of access operations per unit time based on the characteristic of the correlation such that a sum of a first busy rate corresponding to a first number of access operations per unit time and a second busy rate corresponding to a second number of access operations per unit time becomes equal to or lower than a given busy rate; and controlling a number of operations to access the second storage area per unit time based on the second number of access operations.

Abstract: A microwave oscillation element of the present invention includes a lamination main part in which an oscillating layer that is a magnetization free layer and that generates a high frequency electromagnetic field by an excitation of a spin wave, a nonmagnetic intermediate layer, a polarizer layer, and a reference layer that is to be a base magnetic layer of a spin transfer due to application of current are layered in this order. The oscillating layer is made of CoIr, the polarizer layer is configured of CoCr or CoRu; and the nonmagnetic intermediate layer is configured of Cr or Ru. As a result, the efficiency of the spin injection is improved and the microwave oscillation element where the oscillation efficiency is excellent can be realized.

Abstract: A management apparatus and method that manage a storage system, in which an access node and a storage node, with which the management apparatus is in communication via the network. The management apparatus includes a logical volume judging unit that acquires a plurality of processing requests to each of the plurality of storage areas, references a logical volume allocation information storage unit that stores a correspondence relationship between the plurality of storage areas and the plurality of logical volumes in the storage node, and judges a logical volume corresponding to a storage area to become a processing object of each processing request, and a processing request breakdown calculating unit that counts an acquisition count of each processing request for each logical volume based on a judgment result by the logical volume judgment unit, and calculates a proportion of each acquisition count to a total of respective acquisition counts.

Abstract: The present invention provides a spin transport device having lowered areal resistance in its tunneling layer and a magnetic head. The spin transport device (magnetic sensor 1) comprises a channel layer 10 constituted by a semiconductor, ferromagnetic layers 20A, 20B formed on the channel layer 10, and tunneling layers 22A, 22B formed so as to be interposed between the channel layer 10 and ferromagnetic layers 20A, 20B, while the tunneling layers 22A, 22B are constituted by a material substituting a part of Mg in MgO with Zn. As a result of studies, the inventors observed a decrease in areal resistance in a tunnel material having substituted a part of Mg in MgO with Zn. Therefore, the tunneling layers 22A, 22B can lower their areal resistance when constructed by a material having substituted a part of Mg in MgO with Zn.

Abstract: A magneto-resistive effect (MR) element includes a first magnetic layer and a second magnetic layer in which a relative angle of magnetization directions of the first and second magnetic layers changes according to an external magnetic field; and a spacer layer that is provided between the first magnetic layer and the second magnetic layer. The spacer layer contains gallium nitride (GaN) as a main component.

Abstract: Provided is a method for manufacturing a thermally-assisted magnetic recording head with “composite slider structure”. In the method, the waveguide is irradiated with a first light from opposed-to-medium surface side, and the passing first light is detected on back surface side to obtain an image of the light-receiving end surface, and a light-receiving center position is determined from the image. Further, the light source is irradiated with a second light from opposite side to joining surface, and the passing second light is detected on the joining surface side to obtain an image of the light-emitting end surface, and a light-emitting center position is determined from the image. Then, the slider and the light source unit are moved based on the determined positions of the light-receiving and light-emitting centers, aligned and bonded. As a result, alignment can be performed with high accuracy in a short process time under simplified process.

Abstract: In a system management apparatus, a failure detection unit detects a readout failure in one of blocks constituting distributed data stored in a first RAID disk array. A request unit requests a computer to supplement one of the blocks of the distributed data stored in the first RAID disk array in which a readout failure irrecoverable by use of only the data stored in the first RAID disk array occurs, where the computer has a second RAID disk array storing a duplicate of the distributed data stored in the first RAID disk array. And an overwriting unit receives data corresponding to the one of the blocks from the computer, and overwrites the one of the blocks with the received data.

Abstract: A magneto-resistive effect (MR) element includes first and second magnetic layers where a relative angle formed by magnetization directions changes in response to an external magnetic field and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes a main spacer layer that is composed of gallium oxide as a primary component and a bottom layer that is positioned between the main spacer layer and the first magnetic layer and that is composed of partially oxidized copper as a primary component.

Abstract: A data management device includes a memory including a multistage Bloom Filter, a first stage being divided into filter parts of which the number is same as that of data blocks, and a pth stage being divided into filter parts of which a size is a combination of filter parts of a (p?1)th stage; a registration unit registering an entry of data in a filter part of the first stage corresponding to a data block where the data is stored, and the entry of the data to a filter part of the pth stage corresponding to the filter part of the first stage where the entry of the data is registered; and a search unit determining which filter part of the first stage an entry of data being searched is registered in by narrowing down filter parts from the Bloom Filter of which a stage number is large.

Abstract: Provided is a method for manufacturing a thermally-assisted magnetic recording head including a light source unit with a light source and a slider with an optical system. The method comprises steps of: adhering by suction the light source unit with a back holding jig; moving the back holding jig, then aligning a light-emission center of the light source with a light-receiving end surface of the optical system in directions within a slider back surface of the slider; bringing the light source unit into contact with the slider back surface, with a suction surface of the back holding jig tilted from the normal to the slider back surface; applying a load to a load application surface of the unit substrate by a loading means to bring a joining surface of the light source unit into conformity with the slider back surface; and bonding the light source unit and the slider. This method can improve the conformity, thereby achieving adequately strong junction and adequately high accuracy in position.

Abstract: A magneto-resistive effect (MR) element includes first and second magnetic layers in which a relative angle formed by magnetization directions changes in response to an external magnetic field, and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer, on an air bearing surface, has a larger film thickness at both side edge parts in a track width direction than a film thickness at a central part in a track width direction. When a region of the spacer layer on the air bearing surface is divided into quarters which are both side edge part regions and two central regions such that track width direction lengths are equivalent, an average film thickness of a region where the both side edge regions are combined is preferably larger than a region where the two central regions are combined.