Abstract: An electron beam projection apparatus providing a magnetic refocusing lens for adjusting a focal position of an electron beam on an object. An axis of an auxiliary magnetic field produced by the magnetic refocusing lens is required equivalently to agree to that of a convergent magnetic field produced by a magnetic object lens. An inclination adjustment apparatus of the magnetic refocusing lens provides a rolling mechanism being independently rotatable on two axes being perpendicular to each other and also perpendicular to a direction of an axis of a convergent magnetic field. With this inclination adjustment apparatus, adjustment operation is improved.

Abstract: An electron beam exposure system comprises a beam source for producing and directing an electron beam along an optical axis, an evacuated column for accommodating the beam source and extending along the optical axis, an electron lens for focusing the electron beam on a substrate; and an electromagnetic deflector supplied with a control signal for deflecting the electron beam in response to the control signal.

Abstract: A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed.

Abstract: An electron beam exposure system comprises an electron beam source for producing an electron beam, an electron lens system for focusing the electron beam on an object, and an electrostatic deflector supplied with a control signal for deflecting the electron beam in response to the control signal, wherein the electrostatic deflector comprises a sleeve extending in an axial direction and having an outer surface and a corresponding inner surface. A plurality of electrodes are provided on the outer surface of the sleeve with a separation from each other in a circumferential direction. The sleeve has a finite conductivity such that an electric current flows along the sleeve in the circumferential direction when a control voltage is applied across the plurality of electrodes.

Abstract: A charged particle beam mask and apparatus and method of using the same employing a mask that includes a substrate and a plurality of substantially rectangular beam passing sections arranged in parallel and to have a trapezoidal shape. In addition, the masks having a matrix of irradiation areas formed thereon where each irradiation area has a matrix of block patterns, are aligned and selectively irradiated to form a desired pattern on an object.

Abstract: A method for writing a pattern on a surface of an object by a focused electron beam with a minimized distortion of the electron beam comprises the steps of dividing the surface of the object into a plurality of parallel bands, moving the object in a direction perpendicular to the bands with a predetermined speed, achieving an exposure of the device pattern on an individual, band by band basis while moving the object with the predetermined speed. The predetermine speed is optimized with respect to an exposure interval representing a time interval in which the exposure of the band is possible.

Abstract: An electron beam exposure system having a capability of checking a pattern to be written on an object comprises an electron beam source for producing an electron beam along an optical axis toward the object, a block mask provided on the optical axis and having selectable aperture patterns therein for correspondingly shaping the electron beam, an addressing deflector fixture for selectively passing the electron beam through a desired aperture on the block mask, an electron optical system for focusing the electron beam shaped by the block mask on the object such that an image of the aperture of the block mask is projected on the object, a screen provided along the optical axis between the block mask and the object for interrupting the electron beam when the electron beam is offset from the alignment with the optical axis, the screen having a through-hole in alignment with the optical axis for passing the electron beam therethrough a controller for controlling the electron optical system such that an image of th

Abstract: A charged-particle beam exposure method which has a stencil mask formed with a several mask patterns, deflects a beam of charged particles to a mask pattern selected from among the several mask patterns and shapes the beam, and performs wafer exposure by deflecting the shaped beam and illuminating the same onto a wafer.

Abstract: An electron beam exposure system for writing a pattern on an object by an electron beam comprises a beam source for producing an electron beam, a beam focusing unit for focusing the electron beam on the object, a beam processing unit provided along an optical axis of the electron beam for modifying the electron beam in response to control signals, a column extending along the optical axis of the electron beam so as to surround a region that includes the object, the beam source, the beam focusing unit and the beam processing unit and for maintaining the region evacuated, and an interface element mounted on the column for supplying the control signals to said beam processing unit.

Abstract: A deflection compensating device for a converging lens includes a first electrostatic deflector by which a charged particle beam is deflected to a desired position by applying an electrical field to the charged particle beam. An electromagnetic type converging lens is where the charged particle beam is converged by applying a magnetic field to a beam deflected by the first electrostatic deflector. A second electrostatic is disposed in a magnetic field generated by the converging lens and generates an electrical field in a direction deviated by 90.degree. with respect to the direction of the electrical field generated by the first electrostatic deflector. The passage way of the charged particle beam which passes through the electromagnetic type converging lens substantially corresponds to the lens center axis of the electromagnetic type lens.