Abstract: In order to provide a novel determination device capable of determining the type of excretion by a subject and a related technology thereof, a determination device includes at least one processor, and the at least one processor carries out a determination process of determining the type of excretion by a subject by referring to a first gas concentration, which is a gas concentration detected by a first gas sensor, and a second gas concentration, which is a gas concentration detected by a second gas sensor that is disposed at a position farther from the subject than a position at which the first gas sensor is disposed.

Abstract: In order to provide a novel determination device capable of determining the type of excretion by a subject and a related technology thereof, a determination device includes at least one processor, and the at least one processor carries out a determination process of determining the type of excretion by a subject by referring to a first gas concentration detected by a first gas sensor and a second gas concentration detected by a second gas sensor which differs from the first gas sensor in gas species to be mainly detected.

Abstract: Provided herein, in one aspect, are antibodies that immunospecifically bind to a human KIT antigen comprising the fourth and/or fifth extracellular Ig-like domains (that is, D4 and/or D5 domains), polynucleotides comprising nucleotide sequences encoding such antibodies, and expression vectors and host cells for producing such antibodies. The antibodies can inhibit KIT activity, such as ligand-induced receptor phosphorylation. Also provided herein are kits and pharmaceutical compositions comprising antibodies that specifically bind to a KIT antigen, as well as methods of treating or managing a KIT-mediated disorder or disease and methods of diagnosing a KIT-mediated disorder or disease using the antibodies described herein.

Abstract: An information processing apparatus includes a receiver configured to receive a data set including a requested acceleration as information representing movement of a vehicle in a front-rear direction and any one of a steering angle, a yaw rate, and a rotation radius as information representing movement of the vehicle in a lateral direction from each of a plurality of applications, an arbitration unit configured to perform arbitration of information representing the movement of the vehicle in the front-rear direction and arbitration of information representing the movement of the vehicle in the lateral direction based on a plurality of the data sets received by the receiver, and a first output unit configured to output instruction information for driving an actuator based on an arbitration result of the arbitration unit.

Abstract: An actuator device includes a support portion, a movable portion, a connection portion which connects the movable portion to the support portion on a second axis, a first wiring which is provided on the connection portion, a second wiring which is provided on the support portion, and an insulation layer which includes a first opening exposing a surface opposite to the support portion in a first connection part located on the support portion in one of the first wiring and the second wiring and covers a corner of the first connection part. The rigidity of a first metal material forming the first wiring is higher than the rigidity of a second metal material forming the second wiring. The other wiring of the first wiring and the second wiring is connected to the surface of the first connection part in the first opening.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory and a memory controller. The nonvolatile memory includes blocks each including memory cells. The memory controller is configured to control access to the nonvolatile memory. The memory controller is configured to: set a first block, among the plurality of blocks, to be written in a first mode, the first mode being a mode in which data of a first number of bits is written into the memory cell, and set a plurality of second blocks, among the plurality of blocks, to be written in a second mode, the second mode being a mode in which data of a second number of bits is written into the memory cell, the second number being larger than the first number; acquire access information related to the second blocks; and change a writing mode of the first block which has been set in the first mode to the second mode when a first condition of the second blocks based on the access information is satisfied.

Abstract: The present disclosure provides in one aspect a construct comprising the R2 region of FGF23. In other embodiments, the construct functions as a FGF23 antagonist by blocking FGF23 binding to ?-Klotho and cell signaling via FGFR activation. In yet other embodiments, the construct prevents FGFR activation. In yet other embodiments, the construct of the present disclosure can be used to treat diseases or disorders related to FGF23 dysregulation and/or overexpression, such as but not limited to phosphate metabolism disorders.

Abstract: Provided herein, in one aspect, are antibodies that immunospecifically bind to a human KIT antigen comprising the fourth and/or fifth extracellular Ig-like domains (that is, D4 and/or D5 domains), polynucleotides comprising nucleotide sequences encoding such antibodies, and expression vectors and host cells for producing such antibodies. The antibodies can inhibit KIT activity, such as ligand-induced receptor phosphorylation. Also provided herein are kits and pharmaceutical compositions comprising antibodies that specifically bind to a KIT antigen, as well as methods of treating or managing a KIT-mediated disorder or disease and methods of diagnosing a KIT-mediated disorder or disease using the antibodies described herein.

Abstract: A source pad of a main semiconductor element is electrically connected to an n+-type source region via a barrier metal. A temperature sensing part is a poly-silicon diode formed by a pn junction between a p-type poly-silicon layer that is a p-type anode region and an n-type poly-silicon layer that is an n-type cathode region. The temperature sensing part is provided, via the field insulating film, on a front surface of a same semiconductor substrate as the main semiconductor element. An anode pad and a cathode pad are in direct contact with the p-type poly-silicon layer and the n-type poly-silicon layer, respectively. The source pad, the anode pad, and the cathode pad are aluminum alloy films.

Abstract: A gas flow path includes: a filter configured to selectively transmit a gas; a tubular member which is provided downstream of the filter and in which an opening area at a downstream end is smaller than an opening area at an upstream end; and a negative pressure generating device which is provided in a stage subsequent to the tubular member and which is configured to suck the gas that has passed through the tubular member. This provides a gas flow path and a gas detection system which can concentrate a detection-target gas species in a real-time manner.

Abstract: A gas measuring device includes: a filter to which a power supply that applies a voltage or current is connected, which generates resistance heat, and which combusts a predetermined combustible gas in contact therewith; and a gas sensor configured to detect the combustible gas that has passed through the filter.

Abstract: A gas measuring device includes: a gas rectification unit configured to rectify gas to control traveling directions and traveling speeds of gas molecules based on molecular weights of the gas molecules; and a gas sensor configured to absorb the gas molecules of the gas rectified by the gas rectification unit, and to detect absorption positions and absorption amounts.

Abstract: A gas measuring device includes: a magnetic field generation unit configured to generate a magnetic field; and a gas sensor configured to detect a gas that has passed through the magnetic field generated by the magnetic field generation unit.

Abstract: Provided is a semiconductor device including a drift region of a first conductivity type which is provided in a semiconductor substrate, a buffer region of the first conductivity type which is provided in a back surface side of the semiconductor substrate relative to the drift region and which includes a first peak of a doping concentration and a second peak of the doping concentration which is provided in a front surface side of the semiconductor substrate relative to the first peak, and a first lifetime control region provided between the first peak and the second peak in a depth direction of the semiconductor substrate. An integrated concentration obtained from an upper end of the drift region to the second peak may be a critical integrated concentration or more in the depth direction of the semiconductor substrate.

Abstract: The gas measurement device includes a plurality of electrodes arranged apart from each other so as to have a gap through which gas can pass, each electrode connected to a power source for applying voltage or current, and a gas sensor configured to detect gas molecules passing between the electrodes.

Abstract: The gas measurement device includes a gas sensor disposed in a gas chamber, a filter configured to control passing gas molecules to the gas chamber, and a driving unit configured to move at least a part of a member defining the gas chamber.

Abstract: The gas measurement device includes a filter having a plurality of openings, each opening being variable in size, an adjustment mechanism configured to vary size of the plurality of openings, a first gas sensor configured to detect gas molecules passing through an opening of the filter and output a first measurement value corresponding to the detected gas molecules, and a second gas sensor configured to detect the gas molecules passing through the opening of the filter, output a second measurement value corresponding to the detected gas molecules, and detect gas molecules of a gas species different from the gas molecules detected by the second gas sensor.

Abstract: The gas measurement device includes a catalyst member connected to a power source applying voltage or current, performing a reaction of a first gas and a second gas contained in a mixed gas contacted with the catalyst member to generate a third gas, and exhibiting a catalytic action in which the reaction changes in response to temperature, and a gas sensor configured to detect gas molecules contacted with the catalyst member.

Abstract: Provided is a semiconductor device including: a semiconductor substrate having a drift region of a first conductivity type; and a buffer region of the first conductivity type provided between the drift region and a lower surface of the semiconductor substrate and having a higher doping concentration than the drift region. The buffer region has two or more helium chemical concentration peaks arranged at different positions in a depth direction of the semiconductor substrate.

Abstract: The additive manufacturing system includes a container having an upper part being opened, a base part being vertically movable, and defining a space therein, the space being fillable with sand as a base material of a molded object, an additive manufacturing apparatus forming a green body of the molded object layer by layer in the container while causing the base part to move down, and a microwave oven defining a space therein, the space configured to house the container including the green body, the microwave oven configured to irradiate the container with a microwave to obtain the molded object, wherein a part or a whole of the container is made of a dielectric.