Abstract: A terminal connection structure of a motor casing configured to house an AC motor of a plurality of phases, the terminal connection structure includes a plurality of terminal blocks located side by side to each other along a circumferential direction of the motor casing and including a plurality of terminal surfaces facing away from the motor casing, and a plurality of terminals that penetrate the terminal blocks and are configured to be electrically connected to the phases of the AC motor. A portion of each of the terminals is located on the terminal surfaces. At least one terminal surface is offset in a perpendicular direction from a plane aligned with another terminal surface of the plurality of terminal surfaces.

Abstract: A production management system transfers information, such as preliminary information relating to an order, to a material procurement system. An assembly maker changes a production plan of units from a terminal by referring to this information. Information on which the change is reflected is opened so as to be referred to from a component maker. The component maker produces components based on the referred information, and deposits the produced components in a deposit warehouse. The assembly maker produces each assembled component using components delivered from the deposit warehouse, and delivers produced assembled components to a product developing/manufacturing company.

Abstract: To provide an information providing system which can easily and quickly provide information about parts.

Abstract: In a power MOS FET and the method of manufacturing such FET, in which a material, such as platinum, having a small resistivity compensation effect is diffused as a lifetime killer into the vicinity of a PN diode junction formed by the drain region and the base region. The diffusion is made through an opening formed in a covering insulator layer. An example of the lifetime killer is platinum and the preferable temperature range for diffusing platinum is not higher than 900.degree. C.

Abstract: In a power MOS FET and the method of manufacturing such FET, in which a material, such as platinum, having a small resistivity compensation effect is diffused as a lifetime killer into the vicinity of a PN diode junction formed by the drain region and the base region. The diffusion is made through an opening formed in a covering insulator layer. An example of the lifetime killer is platinum and the preferable temperature range for diffusing platinum is not higher than 900.degree.C.