Abstract: A nitride semiconductor template includes a Ga2O3 substrate, a buffer layer formed on the Ga2O3 substrate and including AlN as a principal component, a first nitride semiconductor layer formed on the buffer layer and including AlxGa1-xN (0.2<x?1) as a principal component, and a second nitride semiconductor layer formed on the first nitride semiconductor layer and including AlyGa1-yN (0.2?y?0.55, y<x) as a principal component.

Abstract: A nitride semiconductor template includes a Ga2O3 substrate, a buffer layer that includes as a main component AlN and is formed on the Ga2O3 substrate, a first nitride semiconductor layer that includes as a main component AlxGa1-xN (0.2<x?1) and is formed on the buffer layer, a second nitride semiconductor layer that includes as a main component AlyGa1-yN (0.2?y?0.55, y<x) and is formed on the first nitride semiconductor layer, and a third nitride semiconductor layer that is formed on the second nitride semiconductor layer and includes a multilayer structure including an Inu1Alv1Gaw1N (0.02?u1?0.03, u1+v1+w1=1) layer and Inu2Alv2Gaw2N (0.02?u2?0.03, u2+v2+w2=1, v1+0.05?v2?v1+0.2) layers on both sides of the Inu1Alv1Gaw1N layer.

Abstract: A nitride semiconductor template includes a Ga2O3 substrate, a buffer layer that includes as a main component AlN and is formed on the Ga2O3 substrate, a first nitride semiconductor layer that includes as a main component AlxGa1-xN (0.2<x?1) and is formed on the buffer layer, a second nitride semiconductor layer that includes as a main component AlyGa1-yN (0.2?y?0.55, y<x) and is formed on the first nitride semiconductor layer, and a third nitride semiconductor layer that is formed on the second nitride semiconductor layer and includes a multilayer structure including an Inu1Alv1Gaw1N (0.02?u1?0.03, u1+v1+w1=1) layer and Inu2Alv2Gaw2N (0.02?u2?0.03, u2+v2+w2=1, v1+0.05?v2?v1+0.2) layers on both sides of the Inu1Alv1Gaw1N layer.

Abstract: A crystal layered structure includes a Ga2O3 substrate and a nitride semiconductor layer and is capable of providing a light emitting element having high light output and a light emitting element includes this crystal layered structure. The crystal layered structure includes a Ga2O3 substrate a dielectric layer which is formed on the Ga2O3 substrate so as to partially cover the upper surface of the Ga2O3 substrate, and which has a refractive index difference of 0.15 or less relative to the Ga2O3 substrate and a nitride semiconductor layer which is formed on the Ga2O3 substrate with the dielectric layer interposed therebetween, and which is in contact with the dielectric layer and a portion not covered by the dielectric layer on the upper surface of the Ga2O3 substrate.

Abstract: A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a Ga2O3 substrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AlN buffer layer formed on the Ga2O3 substrate, and a nitride semiconductor layer formed on the AlN buffer layer.

Abstract: Provided is a crystal layered structure having a low dislocation density on the upper surface of a nitride semiconductor layer on a Ga2O3 substrate, and a method for manufacturing the same. In one embodiment, there is provided a crystal layered structure including: a Ga2O3 substrate; a buffer layer comprising an AlxGayInzN (0?x?1, 0?y?1, 0?z?1, x+y+z=1) crystal on the Ga2O3 substrate; and a nitride semiconductor layer comprising an AlxGayInzN (0?x?1, 0?y?1, 0?z?1, x+y +z=1) crystal including oxygen as an impurity on the buffer layer. The oxygen concentration in a region having a thickness of no less than 200 nm on the nitride semiconductor layer on the side towards the Ga2O3 substrate is no less than 1.0×1018/cm3.

Abstract: Provided is a crystal layered structure having a low dislocation density on the upper surface of a nitride semiconductor layer on a Ga2O3 substrate, and a method for manufacturing the same. In one embodiment, there is provided a crystal layered structure including: a Ga2O3 substrate; a buffer layer comprising an AlxGayInzN (0?x?1, 0?y?1, 0?z?1, x+y+z=1) crystal on the Ga2O3 substrate; and a nitride semiconductor layer comprising an AlxGayInzN (0?x?1, 0?y?1, 0?z?1, x+y+z=1) crystal including oxygen as an impurity on the buffer layer. The oxygen concentration in a region having a thickness of no less than 200 nm on the nitride semiconductor layer on the side towards the Ga2O3 substrate is no less than 1.0×1018/cm3.

Abstract: A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a Ga203 substrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AIN buffer layer formed on the Ga203 substrate, and a nitride semiconductor layer formed on the AIN buffer layer.

Abstract: A semiconductor laminate having small electric resistivity in the thickness direction; a process for producing the semiconductor laminate; and a semiconductor element equipped with the semiconductor laminate. include a semiconductor laminate including a Ga203 substrate; an AlGalnN buffer layer which is formed on the Ga203 substrate; a nitride semiconductor layer which is formed on the AlGalnN buffer layer and contains Si; and an Si-rich region which is formed in an area located on the AlGalnN buffer layer side in the nitride semiconductor layer and has an Si concentration of 5×1018/cm3 or more.

Abstract: A first light beam and a second light beam having discrete wavelength bands are emitted form a light source unit, and enter a light divider. The light divider separates each light beam into a measuring light beam and a reference light beam. The measuring light beams are irradiated on a measurement target, and reflected light beams, which are reflected at various depth positions of the measurement target, are caused to enter a combiner. The reference light beams propagate through optical fibers to enter the combiner. Interference light beams formed by the reflected light beams and the reference light beams for each of the first and second light beams are photoelectrically converted into interference signals. A tomographic image is obtained employing the interference signals for each of the first and second light beams.

Abstract: To provide a superluminescent diode capable of emitting high output super luminescent light having a central wavelength within a range of 0.95 ?m to 1.2 ?m and an undistorted beam cross section, having a long element life. The super luminescent diode is constituted by: an n-type GaAs substrate; an optical waveguide path constituted by an InGaAs active layer that emits light having a central wavelength within a range of 0.95 ?m to 1.2 ?m, formed on the GaAs substrate; and a window region layer having a greater energy gap and a smaller refractive index than the active layer, constituted by p-type GaAs that lattice matches with the GaAs substrate, provided at a rear emitting facet of the optical waveguide path. The p-type GaAs window region layer has a favorable crystal membrane with the InGaAs active layer that emits light having the central wavelength within the range of 0.95 ?m to 1.2 ?m, which does not deteriorate.

Abstract: Low coherence light having a central wavelength ?c of 1.1 ?m and a full width at half maximum spectrum ?? of 90 nm is emitted. The low coherence light has wavelength properties suited for the light absorbing properties, the diffusion properties, and the dispersion properties of living tissue. A light dividing means divides the low coherence light into a measuring light beam, which is irradiated onto a measurement target via an optical probe, and a reference light beam that propagates toward an optical path length adjusting means. A multiplexing means multiplexes a reflected light beam, which is the measuring light beam reflected at a predetermined depth of the measurement target, and the reference light beam, to form coherent light. A coherent light detecting means detects the optical intensity of the multiplexed coherent light. An image obtaining means performs image processes, and displays an optical tomographic image on a display apparatus.

Abstract: A first light beam and a second light beam having discrete wavelength bands are emitted form a light source unit, and enter a light dividing means. The light dividing means separates each light beam into a measuring light beam and a reference light beam. The measuring light beams are irradiated on a measurement target, and reflected light beams, which are reflected at various depth positions of the measurement target, are caused to enter a combining means. The reference light beams propagate through optical fibers to enter the combining means. Interference light beams formed by the reflected light beams and the reference light beams for each of the first and second light beams are photoelectrically converted into interference signals. A tomographic image is obtained employing the interference signals for each of the first and second light beams.

Abstract: To provide a superluminescent diode capable of emitting high output super luminescent light having a central wavelength within a range of 0.95 ?m to 1.2 ?m and an undistorted beam cross section, having a long element life. The super luminescent diode is constituted by: an n-type GaAs substrate; an optical waveguide path constituted by an InGaAs active layer that emits light having a central wavelength within a range of 0.95 ?m to 1.2 ?m, formed on the GaAs substrate; and a window region layer having a greater energy gap and a smaller refractive index than the active layer, constituted by p-type GaAs that lattice matches with the GaAs substrate, provided at a rear emitting facet of the optical waveguide path. The p-type GaAs window region layer has a favorable crystal membrane with the InGaAs active layer that emits light having the central wavelength within the range of 0.95 ?m to 1.2 ?m, which does not deteriorate.

Abstract: Low coherence light having a central wavelength ?c of 1.1 ?m and a full width at half maximum spectrum ?? of 90 nm is emitted. The low coherence light has wavelength properties suited for the light absorbing properties, the diffusion properties, and the dispersion properties of living tissue. A light dividing means divides the low coherence light into a measuring light beam, which is irradiated onto a measurement target via an optical probe, and a reference light beam that propagates toward an optical path length adjusting means. A multiplexing means multiplexes a reflected light beam, which is the measuring light beam reflected at a predetermined depth of the measurement target, and the reference light beam, to form coherent light. A coherent light detecting means detects the optical intensity of the multiplexed coherent light. An image obtaining means performs image processes, and displays an optical tomographic image on a display apparatus.

Abstract: A (??) 75 ?m low coherence light beam is emitted. The low coherence light beam has wavelength properties suited for the light absorbing properties, the diffusion properties, and the dispersion properties of living tissue. A light dividing means divides the low coherence light beam into a measuring light beam, which is irradiated onto a measurement target via an optical probe, and a reference light beam that propagates toward an optical path length adjusting means. A multiplexing means multiplexes a reflected light beam, which is the measuring light beam reflected at a predetermined depth of the measurement target, and the reference light beam, to form a coherent light beam. A coherent light beam detecting means detects the optical intensity of the multiplexed coherent light beam. An image obtaining means performs image processes, and displays an optical tomographic image on a display apparatus.

Abstract: A (??) 75 ?m low coherence light beam is emitted. The low coherence light beam has wavelength properties suited for the light absorbing properties, the diffusion properties, and the dispersion properties of living tissue. A light dividing means divides the low coherence light beam into a measuring light beam, which is irradiated onto a measurement target via an optical probe, and a reference light beam that propagates toward an optical path length adjusting means. A multiplexing means multiplexes a reflected light beam, which is the measuring light beam reflected at a predetermined depth of the measurement target, and the reference light beam, to form a coherent light beam. A coherent light beam detecting means detects the optical intensity of the multiplexed coherent light beam. AN image obtaining means performs image processes, and displays an optical tomographic image on a display apparatus.