Abstract: A reference voltage generation circuit includes a Zener diode and a current generation circuit connected to the Zener diode in parallel. The current generation circuit includes a resistance voltage divider circuit, a transistor circuit and a voltage control circuit. The resistance voltage divider circuit has a branch portion for branching the current into two paths, and outputs a reference voltage acquired by voltage division through a resistive element. The transistor circuit includes two NPN transistors and a series resistance circuit in which resistive elements are connected in series. The two NPN transistors respectively having collectors, bases and emitters. The collectors are respectively connected to the two paths. The bases have a common connection. The series resistance circuit is connected between a ground and one of the emitters. The voltage control circuit equalizes respective collector potentials of the two NPN transistors.

Abstract: A method of fabricating a semiconductor device includes providing a GaN substrate with an epitaxial layer formed thereover, the epitaxial layer forming a heterojunction with the GaN substrate, the heterojunction supporting a 2-dimensional electron gas (2DEG) channel in the GaN substrate. A composite surface passivation layer is formed over a top surface of the epitaxial layer, wherein the composite surface passivation layer comprises a first passivation layer portion formed proximate to a first region of the GaN device and a second passivation layer portion formed proximate to a second region of the GaN device. The first and second passivation layer portions are disposed laterally adjacent to each other over the epitaxial layer, wherein the first passivation layer portion is formed in a first process and the second passivation layer portion is formed in a second process.

Abstract: A light receiving device includes a plurality of photoelectric conversion element units 10A1, 10A2, 10A3, and 10A4 each composed of four types of photoelectric conversion elements including four types of polarization elements 501, 502, 503, and 504 and further includes a polarized component measurement unit 91 and a polarized component calculation unit 92, wherein the polarized component measurement unit 91 obtains, for example, a first polarized component and a third polarized component on the basis of output signals from a first photoelectric conversion element and a third photoelectric conversion element, and the polarized component calculation unit 92 calculates, for example, polarized components of a third polarization azimuth and a first polarization azimuth in the first polarized component and the third polarized component on the basis of the obtained third polarized component and the first polarized component.

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract: An electronic device, that in various embodiments includes a first semiconductor layer comprising a first group III nitride. A second semiconductor layer is located directly on the first semiconductor layer and comprises a second different group III nitride. A cap layer comprising the first group III nitride is located directly on the second semiconductor layer. A dielectric layer is located over the cap layer and directly contacts the second semiconductor layer through an opening in the cap layer.

Abstract: An electronic device, that in various embodiments includes a first semiconductor layer comprising a first group III nitride. A second semiconductor layer is located directly on the first semiconductor layer and comprises a second different group III nitride. A cap layer comprising the first group III nitride is located directly on the second semiconductor layer. A dielectric layer is located over the cap layer and directly contacts the second semiconductor layer through an opening in the cap layer.

Abstract: In some embodiments, an apparatus includes a first layer with a first surface and a second surface opposite to the first surface. The apparatus also includes a second layer having a third surface interfacing the second surface and a fourth surface opposite the third surface. The apparatus further includes a third layer having a fifth surface interfacing the fourth surface and a sixth surface opposite the fifth surface. The apparatus also includes a fourth layer having a seventh surface interfacing the sixth surface to form a heterojunction, which generates a two-dimensional electron gas channel formed in the fourth layer. Further, the apparatus includes a recess that extends from the first surface to the fifth surface.

Abstract: A solar light (heat) absorption material which has an excellent solar light (heat) absorbing ability and a simple structure, and may be used as a low-cost and high-performance heat absorption/accumulation material. Also, a solar light (heat) absorption/control building component including the solar light (heat) absorption material that allows for easy change of its solar light (heat) absorption/control ability. The material includes particles dispersed into a liquid medium having a specific heat ranging from 0.4 to 1.4 cal/g/° C. and a melting point of 5° C. or lower. The dispersed particles have L*value of 30 or less as determined by the CIE-Lab color system (light source D65).

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract: A solar light (heat) absorption material which has an excellent solar light (heat) absorbing ability and a simple structure, and may be used as a low-cost and high-performance heat absorption/accumulation material. Also, a solar light (heat) absorption/control building component including the solar light (heat) absorption material that allows for easy change of its solar light (heat) absorption/control ability. The material includes particles dispersed into a liquid medium having a specific heat ranging from 0.4 to 1.4 cal/g/° C. and a melting point of 5° C. or lower. The dispersed particles have L*value of 30 or less as determined by the CIE-Lab color system (light source D65).

Abstract: Metal contacts with low contact resistances are formed in a group III-N HEMT by forming metal contact openings in the barrier layer of the group III-N HEMT to have depths that correspond to low contact resistances. The metal contact openings are etched in the barrier layer with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer.

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract: The present invention provides a functional filler which is excellent in dispersibility or interaction with polylactic acid as a matrix polymer and can improve heat resistance, moldability and mechanical strength of the polylactic acid; and a resin composition containing the functional filler. The functional filler of the present invention is characterized in including a raw material filler and polylactic acid, wherein a surface or end the raw material filler is modified by the polylactic acid.

Abstract: A solar light (heat) absorption material is provided which has an excellent solar light (heat) absorbing ability and a simple structure, and may be usable as a low-cost and high-performance heat absorption/accumulation material, the inventive material being usable also as a solar light (heat) absorption/control building component that allows easy change of its solar light (heat) absorption/control ability. The material comprises particles dispersed into a liquid medium having a specific heat ranging from 0.4 to 1.4 cal/g/° C. and a melting point of 5° C. or lower. The dispersed particles have L*value of 30 or less as determined by the CIE-Lab color system (light source D65).

Abstract: Provided are a method of manufacturing liquid crystal display device possessing transparent conductive layer exhibiting excellent optical transparency, resistance characteristic, evenness, adhesion to substrate, and hardness, and liquid crystal display device thereof.