Patents by Inventor Yoshikazu Tanno

Yoshikazu Tanno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6627100
    Abstract: A current/voltage non-linear resistor comprises a sintered body having a main component of ZnO, an electrode applied to a surface of the sintered body and an insulation material applied to another surface of the sintered body. The main component containing, as auxiliary components, Bi, Co, Mn, Sb, Ni and Al, and the contents of the auxiliary components are respectively expressed as Bi2O3, Co2O3, MnO, Sb2O3, NiO and Al3+, of Bi2O3: 0.3 to 2 mol %, Co2O3: 0.3 to 1.5 mol %, MnO: 0.4 to 6 mol %, Sb2O3: 0.8 to 7 mol %, NiO: 0.5 to 5 mol % and Al3+: 0.001 to 0.02 mol %; a Bi2O3 crystalline phase in the sintered body including an &agr;-Bi2O3 phase representing at least 80% of the total Bi2O3 phase.
    Type: Grant
    Filed: April 25, 2001
    Date of Patent: September 30, 2003
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hideyasu Ando, Takeshi Udagawa, Yoshiyasu Ito, Hironori Suzuki, Hiroyoshi Narita, Koji Higashibata, Toshiya Imai, Kiyokazu Umehara, Yoshikazu Tanno
  • Publication number: 20020121960
    Abstract: A current/voltage non-linear resistor comprises a sintered body having a main component of ZnO, an electrode applied to a surface of the sintered body and an insulation material applied to another surface of the sintered body. The main component containing, as auxiliary components, Bi, Co, Mn, Sb, Ni and Al, and the contents of the auxiliary components are respectively expressed as Bi2O3, Co2O3, MnO, Sb2O3, NiO and Al3+, of Bi2O3: 0.3 to 2 mol %, Co2O3: 0.3 to 1.5 mol %, MnO: 0.4 to 6 mol %, Sb2O3: 0.8 to 7 mol %, NiO: 0.5 to 5 mol % and Al3+: 0.001 to 0.02 mol %; a Bi2O3 crystalline phase in the sintered body including an &agr;-Bi2O3 phase representing at least 80% of the total Bi2O3 phase.
    Type: Application
    Filed: April 25, 2001
    Publication date: September 5, 2002
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hideyasu Ando, Takeshi Udagawa, Yoshiyasu Ito, Hironori Suzuki, Hiroyoshi Narita, Koji Higashibata, Toshiya Imai, Kiyokazu Umehara, Yoshikazu Tanno
  • Patent number: 6184771
    Abstract: A sintered body which can be formed into a resistor having a non-linear resistance includes zinc oxide is the principal composition and bismuth, cobalt, antimony, manganese and nickel respectively converted to expressed Bi2O3, Co2O3, Sb2O3, MnO and NiO as auxiliary compositions. The compositions contains 0.05 to 10 mol % of Bi2O3, 0.05 to 10 mol % of Co2O3, 0.05 to 10 mol % of Sb2O3, 0.05 to 10 mol % of MnO and 0.05 to 10 mol % of NiO; the content ratio of the Bi2O3 to the NiO is in a mole ratio of 0.5 or more but 1.5 or less, and the content ratio of the MnO to the Sb2O3 is in a mole ratio of 1.0 or less. Preferably, the composition contains at least one of 0.5 to 500 ppm of aluminum, converted to Al3+, and 10 to 1000 ppm of at least one or the other of boron and silver, converted respectively to B3+, and Ag+. The composition may also contain 0.01 to 1000 ppm of at least one of sodium, potassium, chlorine and calcium, converted respectively to Na+, K+, Cl− and Ca2+.
    Type: Grant
    Filed: May 24, 1999
    Date of Patent: February 6, 2001
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hironori Suzuki, Hideyasu Andoh, Yoshiyasu Itoh, Hiroyoshi Narita, Yoshikazu Tanno, Toshiya Imai
  • Patent number: 4700169
    Abstract: A high resistivity layer is disclosed for a medal oxide voltage-nonlinear resistor (varistor) for arrestors and surge absorbers of the type having a sintered body containing zinc oxide as a major component and two spaced electrodes attached to the surface of the body wherein the electrodes are insulated from one another by the high resistivity layer. The high resistivity layer of the invention consists essentially of at least zinc ferrate (III). The high resistivity layer is formed by sintering a slurry containing ferric oxide (Fe.sub.2 O.sub.3) as a major component.
    Type: Grant
    Filed: March 29, 1985
    Date of Patent: October 13, 1987
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Yoshikazu Tanno
  • Patent number: 4338223
    Abstract: A voltage-nonlinear resistor having a good polarity characteristics is manufactured by sintering a composition containing metal zinc, zinc oxide and at least one oxide selected from the group consisting of nickel oxide, zirconium oxide, yttrium oxide, hafnium oxide and scandium oxide, each component being contained in an amount within a specific range.
    Type: Grant
    Filed: May 7, 1980
    Date of Patent: July 6, 1982
    Assignees: Marcon Electronics Co., Ltd., Tokyo Shibaura Denki Kabushiki Kaisha
    Inventors: Yuji Yokomizo, Kiyoshi Minami, Noboru Ichinose, Yoshikazu Tanno