Abstract: There is provided a lens element which can maintain an accuracy of the axis alignment between the lens elements and effectively suppress occurrence of ghosting and flares, and an imaging lens unit including such lens element. The fourth lens element 40 of the imaging lens unit 1 integrally comprises a lens portion 41 and an edge portion 42 surrounding the lens portion. The edge portion 42 is provided with an annular step portion 43 as an abut portion for axis alignment with a third lens element 30, and a light shielding portion 46 formed of vapor-deposited films are provided at the annular step portion 43.

Abstract: There is provided a lens element which can maintain an accuracy of the axis alignment between the lens elements and effectively suppress occurrence of ghosting and flares, and an imaging lens unit including such lens element. The fourth lens element 40 of the imaging lens unit 1 integrally comprises a lens portion 41 and an edge portion 42 surrounding the lens portion. The edge portion 42 is provided with an annular step portion 43 as an abut portion for axis alignment with a third lens element 30, and a light shielding portion 46 formed of vapor-deposited films are provided at the annular step portion 43.

Abstract: A production method of a substrate for nitride semiconductor device comprising a mask formation step of using a metal nitride as a base material and forming a mask having a prescribed shape on the above-described base material, a three-dimensional structure growth step of growing a three-dimensional structure made of the same material as the base material on the base material having the mask formed thereon using a selective growth technique so that a layer having a higher index plane is formed on the lateral face, and an active layer growth step of growing an active layer containing a rare earth element on the lateral face of the above-described three-dimensional structure using an organometallic vapor phase epitaxial method.

Abstract: A production method of a substrate for nitride semiconductor device comprising a mask formation step of using a metal nitride as a base material and forming a mask having a prescribed shape on the above-described base material, a three-dimensional structure growth step of growing a three-dimensional structure made of the same material as the base material on the base material having the mask formed thereon using a selective growth technique so that a layer having a higher index plane is formed on the lateral face, and an active layer growth step of growing an active layer containing a rare earth element on the lateral face of the above-described three-dimensional structure using an organometallic vapor phase epitaxial method.

Abstract: Disclosed are: an environmentally friendly red light-emitting semiconductor element which operates at low voltage, while having sufficient luminous efficiency and sufficient luminous intensity; and a method for manufacturing the same. Specifically disclosed is a method for manufacturing a red light-emitting semiconductor element, wherein an active layer is formed between a p-type layer and an n-type layer in a sequence of the formation steps of the p-type layer and the n-type layer, said active layer being obtained by adding Eu or Pr into GaN, InN, AlN or a mixed crystal thereof by substituting Ga, In or Al with Eu or Pr, using an organic metal vapor phase deposition method under specific temperature conditions in a site wherein light having a wavelength of 618-623 nm can be emitted. Also specifically disclosed is a red light-emitting semiconductor element which is manufactured by the method for manufacturing a red light-emitting semiconductor element.

Abstract: Disclosed are: an environmentally friendly red light-emitting semiconductor element which operates at low voltage, while having sufficient luminous efficiency and sufficient luminous intensity; and a method for manufacturing the same. Specifically disclosed is a method for manufacturing a red light-emitting semiconductor element, wherein an active layer is formed between a p-type layer and an n-type layer in a sequence of the formation steps of the p-type layer and the n-type layer, said active layer being obtained by adding Eu or Pr into GaN, InN, AlN or a mixed crystal thereof by substituting Ga, In or Al with Eu or Pr, using an organic metal vapor phase deposition method under specific temperature conditions in a site wherein light having a wavelength of 618-623 nm can be emitted. Also specifically disclosed is a red light-emitting semiconductor element which is manufactured by the method for manufacturing a red light-emitting semiconductor element.