Abstract: The present invention provides a water-soluble packaging film which is capable of preventing appearance defects such as clouding and deterioration of sealing properties, especially heat sealing properties, over a long period of time and achieving less deterioration and excellent water solubility after packaging. The present invention relates to a water-soluble packaging film containing: a polyvinyl alcohol; a plasticizer; and a dicarboxylic acid containing a hydroxy group, the dicarboxylic acid containing a hydroxy group having a hydroxy group coefficient, which is a quotient of dividing a weight average molecular weight by the number of hydroxy groups, of 90 or more, the film containing the dicarboxylic acid containing a hydroxy group in an amount of 1 to 5 parts by weight.

Abstract: An objective of the invention is to provide a coated conductive particle having superior connection reliability, a method for manufacturing such coated conductive particle, an anisotropic conductive material and a conductive-connection structure. A coated conductive particle comprising a particle having a surface made of conductive metal and an insulating particles to coat the surface of the particle having the surface made of conductive metal there with, wherein the insulating particles are chemically bonded to the particle having the surface made of conductive metal via a functional group (A) having a bonding property to the conductive metal so that a single coating layer is formed.

Abstract: An objective of the invention is to provide a coated conductive particle having superior connection reliability, a method for manufacturing such coated conductive particle, an anisotropic conductive material and a conductive-connection structure. A coated conductive particle comprising a particle having a surface made of conductive metal and an insulating particles to coat the surface of the particle having the surface made of conductive metal there with, wherein the insulating particles are chemically bonded to the particle having the surface made of conductive metal via a functional group (A) having a bonding property to the conductive metal so that a single coating layer is formed.

Abstract: A semiconductor device and a method for manufacturing the device using a semiconductor substrate of a high resistance with improved Q value of a passive circuit element. Leakage current due to an impurity fluctuation, in the high resistance semiconductor substrate and noise resistance of an active element in the high resistance semiconductor substrate are improved. The semiconductor device includes a bipolar transistor at a main surface of and in the semiconductor substrate. The bipolar transistor includes a semiconductor layer of a first conductivity type at a bottom portion of the bipolar transistor and the semiconductor device includes a buried layer of a second conductivity type, located in the semiconductor substrate and facing the semiconductor layer of the first conductivity type.

Abstract: A semiconductor device includes a silicon semiconductor substrate, having a main surface including a first region and a second region side-by-side, an epitaxially grown layer of high resistivity as a first layer on the main surface, and an epitaxially grown layer of low resistivity as a second layer on the first layer, and having a resistivity lower than the resistivity of the first layer. The semiconductor device includes a bipolar transistor at the first region and a passive element at the second region. The second layer is covers at least the first region and is absent from at least a portion of the second region.

Abstract: A semiconductor device and a manufacturing method for the same can be obtained wherein a semiconductor substrate of a high resistance that can enhance the Q value of a passive circuit element is used and leak current due to the impurity fluctuation that easily occurs in this high resistance semiconductor substrate, and whereby noise resistance of an active element in the high resistance semiconductor substrate is increased. A semiconductor device including a bipolar transistor formed in the main surface of a semiconductor substrate is provided wherein the bipolar transistor includes a semiconductor layer of a first conductive type at a bottom portion thereof and this semiconductor device is provided with a buried layer of a second conductive type, which is located in the semiconductor substrate so as to face the semiconductor layer of the first conductive type.

Abstract: A semiconductor device includes a silicon substrate as a semiconductor substrate, having a main surface including a first region and a second region defined in plane, an epitaxial grown layer of high resistance as a first layer on the main surface, and an epitaxial grown layer of low resistance as a second layer formed at the upper side of the first layer, and having a resistance lower than the resistance of the first layer. The semiconductor device includes a bipolar transistor at the first region and a passive element at the second region. The second layer is arranged so as to cover at least the first region and avoid at least a portion of the second region.

Abstract: A method of manufacturing a semiconductor device is provided in which a semiconductor device including a plurality of FETs having different threshold voltages and gate insulating films with different film thicknesses can be manufactured in a simplified process. Specifically, a first gate insulating film is formed on the main surface of a semiconductor substrate. On the first gate insulating film, a first protection film is formed. In regions A and B in each of which an FET having a second gate insulating film with a film thickness different from that of the first gate insulating film is to be formed, the first gate insulating film and the first protection film are removed to expose the surface of the semiconductor substrate. At the same time, the first protection film is left in regions other than the regions A and B. Using the first protection film as a mask, an impurity is implanted into the semiconductor substrate in the regions A and B.