Abstract: A solid-state imaging device according to an embodiment includes: a plurality of pixels, each of the plurality of pixels including a substrate having a first surface serving as a light incident surface, a photoelectric conversion unit located inside the substrate, a light shielding unit provided on a first surface side, the light shielding unit having a hole portion configured to allow light to be incident on the photoelectric conversion unit, and a first lens made of silicon, the first lens being provided on the light shielding unit and condensing incident light toward the hole portion.

Abstract: A sensor device according to the present technology includes a pixel that includes: a photoelectric conversion element that performs photoelectric conversion; a first charge holding unit and a second charge holding unit that hold charges accumulated in the photoelectric conversion element; a first transfer transistor that transfers the charges to the first charge holding unit; and a second transfer transistor that transfers the charges to the second charge holding unit.

Abstract: Disclosed is a light receiving element including an on-chip lens, a wiring layer, and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a photodiode, a first transfer transistor that transfers electric charge generated in the photodiode to a first charge storage portion, a second transfer transistor that transfers electric charge generated in the photodiode to a second charge storage portion, and an interpixel separation portion that separates the semiconductor layers of adjacent pixels from each other, for at least part of the semiconductor layer in the depth direction. The wiring layer has at least one layer including a light blocking member. The light blocking member is disposed to overlap with the photodiode in a plan view.

Abstract: A sensor device according to the present technology includes a pixel that includes: a photoelectric conversion element that performs photoelectric conversion; a first charge holding unit and a second charge holding unit that hold charges accumulated in the photoelectric conversion element; a first transfer transistor that transfers the charges to the first charge holding unit; and a second transfer transistor that transfers the charges to the second charge holding unit.

Abstract: A first photodetector according to an embodiment of the present disclosure includes: a substrate having a first surface that serves as a light-receiving surface and a second surface opposed to the first surface, and including an uneven structure provided on the first surface and a light-receiving section that performs photoelectric conversion to generate electric charge corresponding to an amount of light reception for each pixel; a passivation film stacked on the first surface of the substrate; and a reflectance adjustment layer including a plurality of protrusions configuring the uneven structure and the passivation film embedded in a plurality of recesses configuring the uneven structure, and having a refractive index between the substrate and the passivation film.

Abstract: Disclosed is a light receiving element including an on-chip lens, a wiring layer, and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a photodiode, a first transfer transistor that transfers electric charge generated in the photodiode to a first charge storage portion, a second transfer transistor that transfers electric charge generated in the photodiode to a second charge storage portion, and an interpixel separation portion that separates the semiconductor layers of adjacent pixels from each other, for at least part of the semiconductor layer in the depth direction. The wiring layer has at least one layer including a light blocking member. The light blocking member is disposed to overlap with the photodiode in a plan view.

Abstract: The present technique relates to a light-receiving element that enables a dark current to be suppressed while improving quantum efficiency using Ge or SiGe, a method of manufacturing the light-receiving element, and an electronic device. The light-receiving element includes: a pixel array region where pixels in which at least a photoelectric conversion region is formed of a SiGe region or a Ge region are arrayed in a matrix pattern; and an AD converting portion provided in pixel units of one or more pixels. The present technique can be applied to, for example, a ranging module that measures a distance to a subject, and the like.

Abstract: To provide a ranging device having improved quantum efficiency and resolution. The present disclosure provides a ranging device including: a semiconductor layer having a first surface and a second surface opposite to the first surface; a lens on the second surface side; first and second charge storage sections in the semiconductor layer on the first surface side; a photoelectric conversion section that is in contact with the semiconductor layer on the first surface side, the photoelectric conversion section including a material different from a material of the semiconductor layer; first and second voltage application sections that apply a voltage to the semiconductor layer between the first and second charge storage sections and the photoelectric conversion section; and a waveguide provided in the semiconductor layer so as to extend from the second surface to the photoelectric conversion section, the waveguide including a material different from the material of the semiconductor layer.

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Abstract: A light receiving element including: a semiconductor substrate; a photoelectric conversion unit (PD) in the semiconductor substrate that converts light into electric charges; a first electric charge accumulation unit (MEM) in the semiconductor substrate to which the electric charges are transferred from the photoelectric conversion unit; a first distribution gate on a front surface of the semiconductor substrate that distributes the electric charges from the photoelectric conversion unit to the first electric charge accumulation unit; a second electric charge accumulation unit (MEM) in the semiconductor substrate to which the electric charges are transferred from the photoelectric conversion unit; and a second distribution gate on the front surface of the semiconductor substrate that distributes the electric charges from the photoelectric conversion unit to the second electric charge accumulation unit, in which the first and second distribution gates each have a pair of buried gate portions.

Abstract: Disclosed is a light receiving element including an on-chip lens, a wiring layer, and a semiconductor layer disposed between the on-chip lens and the wiring layer. The semiconductor layer includes a photodiode, a first transfer transistor that transfers electric charge generated in the photodiode to a first charge storage portion, a second transfer transistor that transfers electric charge generated in the photodiode to a second charge storage portion, and an interpixel separation portion that separates the semiconductor layers of adjacent pixels from each other, for at least part of the semiconductor layer in the depth direction. The wiring layer has at least one layer including a light blocking member. The light blocking member is disposed to overlap with the photodiode in a plan view.

Abstract: The present technology relates to a light receiving element, a distance measurement module, and electronic equipment which are capable of reducing leakage of incident light to adjacent pixels. A light receiving element includes a semiconductor layer in which photodiodes performing photoelectric conversion of infrared rays are formed in units of pixels, and a wiring layer in which a transfer transistor reading charge generated by the photodiodes is formed, and an inter-pixel light shielding unit that shields the infrared rays is formed at a pixel boundary portion of the wiring layer. The present technology can be applied to, for example, a distance measurement module that measures a distance to a subject, and the like.

Abstract: To provide a light receiving element including: a photoelectric conversion unit (PD) that is provided in a semiconductor substrate and converts light into a charge; a first charge accumulation unit (MEM) to which the charge is transferred from the photoelectric conversion unit; a second charge accumulation unit (MEM) to which the charge is transferred from the photoelectric conversion unit, in which each of the first and second charge accumulation units includes a stack of an electrode, a first insulating layer, and a semiconductor layer.

Abstract: In a light receiving device, a light receiving element includes a first photoelectric conversion unit (PD) that converts light into electric charges, a first electric charge storage unit (MEM) to which the electric charges are transferred from the first photoelectric conversion unit, a first distribution gate, a second electric charge storage unit (MEM) to which the electric charges are transferred from the first photoelectric conversion unit, and a second distribution gate, in which the first and second distribution gates are provided at positions axially symmetric to each other with respect to a first center axis extending so as to pass through the center of the first photoelectric conversion unit, in a direction intersecting the column direction at a predetermined angle, when viewed from above the semiconductor substrate.

Abstract: There is provided a light-receiving element including: an on-chip lens; an interconnection layer; and a semiconductor layer arranged between the on-chip lens and the interconnection layer, the semiconductor layer including a photodiode, an interpixel trench portion engraved up to at least a part in a depth direction of the semiconductor layer at a boundary portion of an adjacent pixel, and an in-pixel trench portion engraved at a prescribed depth from a front surface or a rear surface of the semiconductor layer at a position overlapping a part of the photodiode in a plan view.

Abstract: The present technology relates to a light receiving element, a distance measurement module, and electronic equipment which are capable of reducing leakage of incident light to adjacent pixels. The light receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer which is disposed between the on-chip lens and the wiring layer and includes a photodiode. The wiring layer includes a reflection film which is disposed such that at least a portion thereof overlaps the photodiode when seen in a plan view, and a transfer transistor which reads charge generated by the photodiode, and the reflection film is formed of a material different from that of a metal wiring electrically connected to a gate of the transfer transistor. The present technology can be applied to, for example, a distance measurement module that measures a distance to a subject, and the like.

Abstract: A distance measurement accuracy is improved. A solid-state imaging device according to an embodiment includes a pixel array part in which a plurality of pixels is arranged in a matrix, in which each of the pixels includes a plurality of photoelectric conversion units that each photoelectrically converts incident light to generate a charge, a floating diffusion region that accumulates the charge, a plurality of transfer circuits that transfer the charge generated in each of the plurality of photoelectric conversion units to the floating diffusion region, and a first transistor that causes a pixel signal of a voltage value corresponding to a charge amount of the charge accumulated in the floating diffusion region to appear in a signal line.

Abstract: An enzyme sensor including a pair of electrodes, an electron transfer layer held between the pair of electrodes, and an electron generating capsule in which a membrane containing at least a substrate of an enzyme to be detected encloses at least one or more kinds of enzymes other than the enzyme to be detected, the electron generating capsule being in contact with the electron transfer layer.

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Abstract: The present technology relates to an imaging element and an imaging apparatus that can suppress color mixture. An imaging element includes a pixel array section including a plurality of pixels that photoelectrically converts incident light, the pixel including a first signal extraction section including an application electrode connected to a first drive line for application of voltage, and a suction electrode for detecting a signal carrier generated by the photoelectric conversion, and a second signal extraction section including an application electrode connected to a second drive line for application of voltage and a suction electrode, in which a distance from the first signal extraction section to the second signal extraction section shorter than a distance from the first signal extraction section of the predetermined pixel to the second signal extraction section of another pixel adjacent to the predetermined pixel. The present technology can be applied to an imaging apparatus.