Abstract: A casing includes a tubular part including a gas inlet; a gas outlet apart from the gas inlet in an axial direction of the tubular part and in communicative connection with an inside and an outside of the tubular part; and a solid substance discharge port aligned with the gas outlet in a direction along an outer periphery of the tubular part. A blade rotates together with a rotor and has a first end adjacent to the gas inlet and a second end adjacent to the gas outlet. The casing has a space extending to the solid substance discharge port with respect to the second end of the blade in the axial direction of the tubular part. A separation device further includes a discharge tubular part having an inner space in communicative connection with the solid substance discharge port and protruding from an outer peripheral surface of the tubular part.

Abstract: A sensor system includes a sensor element, a signal processing circuit, and a pseudo-signal correction circuit. The sensor element outputs an electric signal corresponding to an external force. The signal processing circuit converts the electric signal coming from the sensor element into a signal having a certain signal format and then outputs the signal thus converted. The pseudo-signal correction circuit corrects a pseudo-signal outputted by the sensor element. When receiving a test signal, the sensor element performs a self-diagnosis based on the test signal and then outputs the pseudo-signal, which represents a result of the self-diagnosis. The pseudo-signal correction circuit corrects the pseudo-signal based on environment information about an environment where at least one of the sensor element or the signal processing circuit is located.

Abstract: A separating device includes a casing, a rotor, and a blade. The casing has a gas inlet, a gas outlet, and a discharge port for solid substances. The rotor is disposed on an inner side of the casing and is configured to be rotatable around a central axis of rotation of the rotor, the central axis of rotation extending along an axial direction of the casing. The blade is disposed between the casing and the rotor and is configured to rotate together with the rotor. The blade has a first end adjacent to the gas inlet and a second end adjacent to the gas outlet. The casing has a space between the second end of the blade and the discharge port in the axial direction.

Abstract: A separator includes a rotor, a plurality of flow channels each of which has an inlet and an outlet for gas and are in a vicinity of a rotation axis of the rotor, an air current producer configured to cause gas to flow through the plurality of flow channels, a driving device configured to rotate the rotor to rotate the plurality of flow channels around the rotation axis, and a discharger for allowing discharge of solid materials suspended in airstream produced in each of the plurality of flow channels, in a direction away from the rotation axis.

Abstract: A separator includes a rotor, a plurality of flow channels each of which has an inlet and an outlet for gas and are in a vicinity of a rotation axis of the rotor, an air current producer configured to cause gas to flow through the plurality of flow channels, a driving device configured to rotate the rotor to rotate the plurality of flow channels around the rotation axis, and a discharger for allowing discharge of solid materials suspended in airstream produced in each of the plurality of flow channels, in a direction away from the rotation axis.

Abstract: An organic EL element includes an organic EL substrate 4 including an organic light emitting unit provided on a translucent substrate, and a sealing cap substrate sealing the light emitting unit. The organic EL substrate includes first electrode taking-out pads and provided in electrodes which feed power to the light emitting unit, and a first bonding portion 40 provided in a peripheral portion of the translucent substrate. The sealing cap substrate includes second electrode taking-out pads and facing the first electrode taking-out pads, through-wiring and passing through the sealing cap substrate, and a second bonding portion facing the first bonding portion. The first bonding portion and the second bonding portion are bonded together through surface activated bonding.

Abstract: The MEMS switch comprises a substrate with signal-lines having fixed-contacts, a movable-plate with a movable-contact, a flexible support-member supporting the movable-plate, a static-actuator and a piezoelectric-actuator configured to contact the movable-contact with the fixed-contact. The movable-contact is provided at its longitudinal center with the movable-contact, and its both the longitudinal ends with static-movable-electrode-plate. The support-member is four strips disposed on portions outside of the both width ends of the movable plate. The strip extends along the longitudinal direction of the movable plate, provided with a first end fixed to the movable plate, and provided with a second end fixed to the substrate. The piezoelectric-element is disposed on an upper surface of the strip to be located at a portion outside of the width ends of the movable-plate.

Abstract: A bandpass filter includes a combination of a BAW filter and a patterned planar filter with stubs. The BAW filter is composed of a plurality of piezoelectric resonators to give a specific frequency bandpass, while the planer filter is configured to attenuate frequencies near and outside the bandpass. The resonators are connected in a ladder configuration between a first signal transmission path and a ground. The planar filter includes a strip line formed on a dielectric layer to define a second signal transmission path. The BAW filter and the planar filter are formed on a common substrate with the first and second transmission paths connected to each other. The BAW filter, in combination with the patterned planar filter added with the stub, can improve a deep near-band rejection inherent to the BAW filter, exhibiting an excellent out-of-band rejection over certain adjacent frequency ranges outside of the bandpass, and therefore give a sharp and wide bandpass.

Abstract: The MEMS switch comprises a substrate with signal-lines having fixed-contacts, a movable-plate with a movable-contact, a flexible support-member supporting the movable-plate, a static-actuator and a piezoelectric-actuator configured to contact the movable-contact with the fixed-contact. The movable-contact is provided at its longitudinal center with the movable-contact, and its both the longitudinal ends with static-movable-electrode-plate. The support-member is four strips disposed on portions outside of the both width ends of the movable plate. The strip extends along the longitudinal direction of the movable plate, provided with a first end fixed to the movable plate, and provided with a second end fixed to the substrate. The piezoelectric-element is disposed on an upper surface of the strip to be located at a portion outside of the width ends of the movable-plate.

Abstract: A bandpass filter includes a combination of a BAW filter and a patterned planar filter with stubs. The BAW filter is composed of a plurality of piezoelectric resonators to give a specific frequency bandpass, while the planer filter is configured to attenuate frequencies near and outside the bandpass. The resonators are connected in a ladder configuration between a first signal transmission path and a ground. The planar filter includes a strip line formed on a dielectric layer to define a second signal transmission path. The BAW filter and the planar filter are formed on a common substrate with the first and second transmission paths connected to each other. The BAW filter, in combination with the patterned planar filter added with the stub, can improve a deep near-band rejection inherent to the BAW filter, exhibiting an excellent out-of-band rejection over certain adjacent frequency ranges outside of the bandpass, and therefore give a sharp and wide bandpass.

Abstract: A solid state relay composed of a series connected pair of LDMOSFETs has a minimized output capacitance. Each LDMOSFET is configured to have a silicon layer of a first conductive type, a drain region of the first conductive type diffused in the top surface of the silicon layer, a well region of a second conductive type diffused in the silicon layer in a laterally spaced relation from the drain region, and a source region of the first conductive type diffused within the well region to define a channel extending between the source region and a confronting edge of the well region along the top surface of the silicon layer. Each LDMOSFET is of an SOI (Silicon-On-Insulator) structure composed of a silicon substrate placed on a supporting plate, a buried oxide layer on the silicon substrate, and the silicon layer on the buried oxide layer.

Abstract: To provide a semiconductor device having a large allowable current, a demanded withstand voltage, and small output capacitance and resistance, the semiconductor device comprises a semiconductor layer formed on a semiconductor substrate, and the semiconductor layer includes a first conductivity type-drain region, a second conductivity type-well region apart from the drain region, a first conductivity type-source region in the well region apart from one end of the well region on the side of the drain region, a first conductivity type-drift region formed between one end of the well region and the drain region and in contact with the well region and the drain region, respectively, and a gate electrode formed spaced a gate oxide layer and on the well region located between the drift region and the source region; and the impurity concentration of the drift region decreases in the lateral direction and also in the vertical direction, respectively, as the distance from the drain region increases.

Abstract: A solid state relay composed of a series connected pair of LDMOSFETs has a minimized output capacitance. Each LDMOSFET is configured to have a silicon layer of a first conductive type, a drain region of the first conductive type diffused in the top surface of the silicon layer, a well region of a second conductive type diffused in the silicon layer in a laterally spaced relation from the drain region, and a source region of the first conductive type diffused within the well region to define a channel extending between the source region and a confronting edge of the well region along the top surface of the silicon layer. Each LDMOSFET is of an SOI (Silicon-On-Insulator) structure composed of a silicon substrate placed on a supporting plate, a buried oxide layer on the silicon substrate, and the silicon layer on the buried oxide layer.

Abstract: To provide a semiconductor device having a large allowable current, a demanded withstand voltage, and small output capacitance and resistance, the semiconductor device comprises a semiconductor layer formed on a semiconductor substrate, and the semiconductor layer includes a first conductivity type-drain region, a second conductivity type-well region apart from the drain region, a first conductivity type-source region in the well region apart from one end of the well region on the side of the drain region, a first conductivity type-drift region formed between one end of the well region and the drain region and in contact with the well region and the drain region, respectively, and a gate electrode formed spaced a gate oxide layer and on the well region located between the drift region and the source region; and the impurity concentration of the drift region decreases in the lateral direction and also in the vertical direction, respectively, as the distance from the drain region increases.

Abstract: A solid state relay composed of a series connected pair of LDMOSFETs has a minimized output capacitance. Each LDMOSFET is configured to have a silicon layer of a first conductive type, a drain region of the first conductive type diffused in the top surface of the silicon layer, a well region of a second conductive type diffused in the silicon layer in a laterally spaced relation from the drain region, and a source region of the first conductive type diffused within the well region to define a channel extending between the source region and a confronting edge of the well region along the top surface of the silicon layer. Each LDMOSFET is of an SOI (Silicon-On-Insulator) structure composed of a silicon substrate placed on a supporting plate, a buried oxide layer on the silicon substrate, and the silicon layer on the buried oxide layer.

Abstract: A thin film transistor of SOI (Silicon-On-Insulator) type includes a buried oxide layer formed on a semiconductor substrate, a silicon layer of a first conductive type formed on the buried oxide layer, and an upper oxide layer formed on the silicon layer. The silicon layer has a body region of a second conductive type, source region of the first conductive type, drain region of the first conductive type, and a drift region of the first conductive type. The silicon layer is formed with a first portion of a thickness T1 in which the doping region is formed, and a second portion of a thickness T2 in which the body region is formed to reach the buried oxide layer. When the thicknesses T1 and T2 are determined so as to satisfy the relationships:0.4 .mu.m<T1,0.4 .mu.m.ltoreq.T2.ltoreq.1.5 .mu.m, andT2<T1,The transistor exhibits an improved power dissipation, high breakdown voltage, and a low on-resistance, and also provides advantages in a manufacturing process of the transistor.