Abstract: An Sb—Te-based alloy sintered compact sputtering target having Sb and Te as main components and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles is provided. An average grain size of the Sb—Te-based alloy particles is 3 ?m or less and a standard deviation thereof is less than 1.00. An average grain size of the C or B particles is 0.5 ?m or less and a standard deviation thereof is less than 0.20. When the average grain size of the Sb—Te-based alloy particles is X and the average grain size of the carbon or boron particles is Y, Y/X is within a range of 0.1 to 0.5. This provides an improved Sb—Te-based alloy sputtering target that inhibits generation of cracks in the sintered target and prevents generation of arcing during sputtering.

Abstract: A sputtering target according to this invention comprises an alloy of Al and Sc and contains from 25 at. % to 50 at. % of Sc. The sputtering target has an oxygen content of 2000 ppm by mass or less, and a variation in Vickers hardness (Hv) of 20% or less.

Abstract: An Al2O3 sputtering target having a purity of 99.99 wt % or higher, a relative density of 85% or higher and 95% or less, a volume resistivity of 10×1014 ?·cm or less, and a dielectric tangent of 15×10?4 or more. An object of the present invention is to provide an Al2O3 sputtering target having favorable sputtering characteristics, and in particular an Al2O3 sputtering target and a production method thereof capable of increasing the deposition rate without having to increase the sputtering power.

Abstract: Provided is a sputtering target member that can efficiently decrease generation of particles during deposition. The sputtering target member is formed of magnesium having a purity of 99.9% by mass or more, and has an average crystal grain size of magnesium of 42 ?m or less.

Abstract: Provided is a novel anode for electroplating, which replaces the Cu anode and which is capable of suppressing plating defects. The Co anode has a number of particles with a grain size of 0.5 ?m or more of 6000 particles/g or less, as measured by an in-liquid particle counter according to JIS B 9925 after dissolving the Co anode in dilute nitric acid having a nitric acid concentration of 20% by mass.

Abstract: Sb—Te-based alloy sintered sputtering target having a Sb content of 10 to 60 at %, a Te content of 20 to 60 at %, and remainder being one or more types of elements selected from Ag, In, and Ge and unavoidable impurities, wherein an average grain size of oxides is 0.5 ?m or less. An object of this invention is to improve the texture of the Sb—Te-based alloy sintered sputtering target in order to prevent the generation of arcing during sputtering and improve the thermal stability of the sputtered film.

Abstract: A sputtering target containing 20 at % to 40 at % of Te, 5 at % to 20 at % of Cu, 5 at % to 15 at % of Zr, and remainder being Al, wherein a structure of the sputtering target is comprise of an Al phase, a Cu phase, a CuTeZr phase, a CuTe phase and a Zr phase. The present invention aims to provide an Al—Te—Cu—Zr-based alloy sputtering target capable of effectively suppressing the degradation of properties caused by compositional deviation, as well as a method of manufacturing the same.

Abstract: An Sb—Te-based alloy sintered compact sputtering target having Sb and Te as main components and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles is provided. An average grain size of the Sb—Te-based alloy particles is 3 ?m or less and a standard deviation thereof is less than 1.00. An average grain size of the C or B particles is 0.5 ?m or less and a standard deviation thereof is less than 0.20. When the average grain size of the Sb—Te-based alloy particles is X and the average grain size of the carbon or boron particles is Y, Y/X is within a range of 0.1 to 0.5. This provides an improved Sb—Te-based alloy sputtering target that inhibits generation of cracks in the sintered target and prevents generation of arcing during sputtering.

Abstract: An Al—Te—Cu—Zr alloy sputtering target, comprising 20 at % to 40 at % of Te, 5 at % to 20 at % of Cu, 5 at % to 15 at % of Zr and the remainder of Al, wherein a Te phase, a Cu phase and a CuTe phase are not present in a structure of the target. An object of the present invention is to provide an Al—Te—Cu—Zr alloy sputtering target capable of effectively reducing particle generation, nodule formation and the like upon sputtering and further capable of reducing oxygen contained in the target.

Abstract: A sputtering target according to this invention comprises an alloy of Al and Sc and contains from 25 at. % to 50 at. % of Sc. The sputtering target has an oxygen content of 2000 ppm by mass or less, and a variation in Vickers hardness (Hv) of 20% or less.

Abstract: A sputtering target containing 20 at % to 40 at % of Te, 5 at % to 20 at % of Cu, 5 at % to 15 at % of Zr, and remainder being Al, wherein a structure of the sputtering target is comprise of an Al phase, a Cu phase, a CuTeZr phase, a CuTe phase and a Zr phase. The present invention aims to provide an Al—Te—Cu—Zr-based alloy sputtering target capable of effectively suppressing the degradation of properties caused by compositional deviation, as well as a method of manufacturing the same.

Abstract: An Al—Te—Cu—Zr alloy sputtering target, comprising 20 at % to 40 at % of Te, 5 at % to 20 at % of Cu, 5 at % to 15 at % of Zr and the remainder of Al, wherein a Te phase, a Cu phase and a CuTe phase are not present in a structure of the target. An object of the present invention is to provide an Al—Te—Cu—Zr alloy sputtering target capable of effectively reducing particle generation, nodule formation and the like upon sputtering and further capable of reducing oxygen contained in the target.

Abstract: Sb—Te-based alloy sintered sputtering target having a Sb content of 10 to 60 at %, a Te content of 20 to 60 at %, and remainder being one or more types of elements selected from Ag, In, and Ge and unavoidable impurities, wherein an average grain size of oxides is 0.5 ?m or less. An object of this invention is to improve the texture of the Sb—Te-based alloy sintered sputtering target in order to prevent the generation of arcing during sputtering and improve the thermal stability of the sputtered film.

Abstract: A sputtering target-backing plate assembly obtained by bonding a target material of Mg to a backing plate of Cu—Cr alloy, wherein the target material and the backing plate are bonded via a layer of Ni or an alloy comprising Ni as a main component at the interface therebetween. An object of the present invention is to provide a sputtering target-backing plate assembly that is used when magnesium (Mg) is the sputtering target material, and to resolve problems inherent in magnesium (Mg) and problems related to the selection of a backing plate to be compatible with magnesium by improving the bonding strength between the target and the backing plate in order to improve the sputtering efficiency.

Abstract: A method of storing a sputtering target made of lanthanum oxide, wherein a lanthanum oxide target to which a lanthanum fluoride film was formed and lanthanum oxide powder are charged in a vacuum pack with an oxygen transmission rate of 0.1 cm3/m2 per 24 h at 1 atm or less and a moisture vapor transmission rate of 0.1 g/m2 per 24 h or less, and, after charging the target and the powder, the vacuum pack is subject to vacuum suction and sealing for storage. This invention aims to provide technology for enabling the long-term storage of a sputtering target in a usable state by devising the method of storing a target made of an oxide of lanthanum as a rare earth metal, and thereby inhibiting the pulverization phenomenon of the target caused by the hydration (hydroxylation) of such target due to residual air or the inclusion of air, and the pulverization phenomenon caused by the formation of carbonate.

Abstract: A method of storing a metal lanthanum sputtering target, wherein a surface of a metal lanthanum target to be stored is processed so as to achieve a roughness Ra of 1 ?m or less, a lanthanum fluoride coating is formed on the surface thereof, the metal lanthanum target to which the lanthanum fluoride coating was formed is subsequently charged in a vacuum pack with an oxygen transmission rate of 0.1 cm3/m2 per 24 h at 1 atm or less and a moisture vapor transmission rate of 0.1 g/m2 per 24 h or less, and the vacuum pack is thereafter subject to vacuum suction and sealing for storage. This invention aims to provide technology for enabling the long-term storage of a sputtering target in a usable state by devising the method of storing a metal lanthanum target as a rare earth metal, and thereby inhibiting the degradation phenomenon caused by the oxidation of the target due to residual air or the inclusion of air.

Abstract: Provided is an Sb—Te-based alloy sintered compact sputtering target having Sb and Te as its main component and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles, wherein the average grain size of the Sb—Te-based alloy particles is 3 ?m or less and the standard deviation thereof is less than 1.00, the average grain size of C or B is 0.5 ?m or less and the standard deviation thereof is less than 0.20, and, when the average grain size of the Sb—Te-based alloy particles is X and the average grain size of carbon or boron is Y, Y/X is within the range of 0.1 to 0.5. The present invention aims to improve the structure of the Sb—Te-based alloy sputtering target, inhibit the generation of cracks in the sintered target, and prevent the generation of arcing in the sputtering process.

Abstract: A sputtering target-backing plate assembly obtained by bonding a target material of Mg to a backing plate of Cu—Cr alloy, wherein the target material and the backing plate are bonded via a layer of Ni or an alloy comprising Ni as a main component at the interface therebetween. An object of the present invention is to provide a sputtering target-backing plate assembly that is used when magnesium (Mg) is the sputtering target material, and to resolve problems inherent in magnesium (Mg) and problems related to the selection of a backing plate to be compatible with magnesium by improving the bonding strength between the target and the backing plate in order to improve the sputtering efficiency.

Abstract: Provided is a hybrid silicon wafer comprising a structure in which a single-crystal wafer is embedded in a sintered polysilicon wafer. Also provided is a method for manufacturing a hybrid silicon wafer having a structure in which a single-crystal wafer is embedded in a sintered polysilicon wafer, wherein a part of the sintered polysilicon is hollowed, a single crystal ingot is inserted into the hollowed portion, these are mutually bonded through thermal diffusion bonding based on HIP to prepare a complex of the sintered polysilicon and the single-crystal silicon ingot, and the complex is sliced. Thereby provided are a hybrid silicon wafer comprising functions of both the polysilicon wafer and the single-crystal wafer, and a method for manufacturing such a hybrid silicon wafer.

Abstract: A method of storing a sputtering target made of lanthanum oxide, wherein a lanthanum oxide target to which a lanthanum fluoride film was formed and lanthanum oxide powder are charged in a vacuum pack with an oxygen transmission rate of 0.1 cm3/m2 per 24 h at 1 atm or less and a moisture vapor transmission rate of 0.1 g/m2 per 24 h or less, and, after charging the target and the powder, the vacuum pack is subject to vacuum suction and sealing for storage. This invention aims to provide technology for enabling the long-term storage of a sputtering target in a usable state by devising the method of storing a target made of an oxide of lanthanum as a rare earth metal, and thereby inhibiting the pulverization phenomenon of the target caused by the hydration (hydroxylation) of such target due to residual air or the inclusion of air, and the pulverization phenomenon caused by the formation of carbonate.