Abstract: In a semiconductor device having a through-hole electrode and a manufacturing method thereof, a dummy groove hole portion for forming insulating portion insulating wirings from each other is provided, to surround a rewiring layer including a through-hole electrode on a back surface of a semiconductor substrate. This allows the wirings to be insulated from each other just by removing the metal layer existing at a bottom portion of the dummy groove hole portion. Thus, a reduction in the processing time can be realized.

Abstract: Evaporation chamber for depositing a protective film on a surface, where a dielectric layer is formed, of front substrate, front substrate is formed a display electrode and the dielectric layer thereon; transporting unit for transporting front substrate into evaporation chamber; gas introducing units for introducing gas containing H2O into evaporation chamber; and partial pressure detecting unit for measuring a certain partial pressure of gas within evaporation chamber, extending from the center of deposition space of evaporation chamber to the downstream of transport direction of front substrate are provided. Gas containing H2O is introduced from gas introducing units such that the partial pressure of gas is controlled in the partial pressure detecting unit.

Abstract: A method for producing a plasma display panel, the method comprising: (i) preparing a front panel and a rear panel, the front panel being a panel wherein an electrode A, a dielectric layer A and a protective layer are formed on a substrate A, and the rear panel being a panel wherein an electrode B, a dielectric layer B, a partition wall and a phosphor layer are formed on a substrate B; (ii) applying a glass frit material onto a peripheral region of the substrate A or B to form an annular glass frit sealing portion; (iii) opposing the front and rear panels with each other such that the annular glass frit sealing portion is interposed therebetween; (iv) supplying a dry gas into a space formed between the opposed front and rear panels; and (v) melting the annular glass frit sealing portion to cause the front and rear panels to be sealed wherein, in the step (i), the protective layer of the front panel is made from a metal oxide comprising at least two oxides selected from among magnesium oxide, calcium oxide, st

Abstract: Evaporation chamber for depositing a protective film on a surface, where a dielectric layer is formed, of front substrate, front substrate is formed a display electrode and the dielectric layer thereon; transporting unit for transporting front substrate into evaporation chamber; gas introducing units for introducing gas containing H2O into evaporation chamber; and partial pressure detecting unit for measuring a certain partial pressure of gas within evaporation chamber, extending from the center of deposition space of evaporation chamber to the downstream of transport direction of front substrate are provided. Gas containing H2O is introduced from gas introducing units such that the partial pressure of gas is controlled in the partial pressure detecting unit.

Abstract: A meniscus of applying fluid is controlled by applying a voltage to a discharge-nozzle side electrode and a counter electrode placed downstream of the discharge nozzle and by increasing or decreasing fluid pressure inside a pump chamber with use of a mechanism for rotational motion or rectilinear motion.

Abstract: A PDP, which has a plurality of display electrodes formed therein, and is provided with a front plate in which the display electrodes are covered with a first dielectric layer and a protective film and a back plate having a plurality of address electrodes that are formed in a direction orthogonal to the display electrode, and covered with a second dielectric layer (backing dielectric layer, is designed so that the protective film has a structure in which grain-state crystals are aggregated and a grain size of the crystals is large, with a void between adjacent crystals being formed with a small size.

Abstract: A meniscus of applying fluid is controlled by applying a voltage to a discharge-nozzle side electrode and a counter electrode placed downstream of the discharge nozzle and by increasing or decreasing fluid pressure inside a pump chamber with use of a mechanism for rotational motion or rectilinear motion.